公开(公告)号：US10096735B2

公开(公告)日：2018-10-09

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0336 ,  H01L29/66 ,  H01L29/267 ,  H01L31/109 ,  H01L29/16

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US09960309B2

公开(公告)日：2018-05-01

申请号：US15181804

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Seongjun Park

IPC: H01L31/109 ,  H01L31/0392 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/109 ,  H01L31/02161 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/072 ,  Y02E10/50

Abstract: A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.

公开(公告)号：US09935184B2

公开(公告)日：2018-04-03

申请号：US14528338

申请日：2014-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungeun Byun ,  Jisoo Kyoung ,  Seongjun Park ,  Hyeonjin Shin ,  Hyunjae Song ,  Jaeho Lee

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC classification number: H01L29/66977 ,  H01L29/456 ,  H01L29/78

Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

公开(公告)号：US09887303B2

公开(公告)日：2018-02-06

申请号：US14971019

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L31/00 ,  H01L31/032 ,  H01L29/16 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L27/144 ,  H01L29/12 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L31/032 ,  H01L27/1446 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66977 ,  H01L29/786 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/1884 ,  Y02E10/50

Abstract: Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

公开(公告)号：US09806218B2

公开(公告)日：2017-10-31

申请号：US15085100

申请日：2016-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/105 ,  H01L31/109 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/107 ,  H01L29/66 ,  H01L29/267 ,  H01L29/16

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US09595580B2

公开(公告)日：2017-03-14

申请号：US14508378

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Seongjun Park ,  Jaeho Lee ,  Jinseong Heo

IPC: H01L29/06 ,  H01L31/032 ,  H01L29/73 ,  H01L29/778 ,  H01L29/10 ,  H01L29/22 ,  H01L29/221 ,  C01B19/04 ,  C01G25/00 ,  C01G27/00 ,  C01G39/06 ,  C01G41/00 ,  H01L29/24 ,  H01L29/66 ,  H01L29/74 ,  H01L29/78 ,  H01L29/792 ,  H01L31/109 ,  H01L29/861 ,  H01L29/737 ,  H01L31/0352

CPC classification number: H01L29/0665 ,  C01B19/04 ,  C01G25/00 ,  C01G27/00 ,  C01G39/06 ,  C01G41/00 ,  C01P2004/20 ,  C01P2006/40 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/66977 ,  H01L29/73 ,  H01L29/7317 ,  H01L29/737 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/792 ,  H01L29/861 ,  H01L29/8611 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/035281 ,  H01L31/109 ,  Y10T428/24802

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract translation: 根据示例实施例，二维（2D）材料元件可以包括彼此化学键合的第一2D材料和第二2D材料。 第一2D材料可以包括基于硫族化物的第一金属材料。 第二2D材料可以包括第二金属硫族化物基材料。 第二2D材料可以结合到第一2D材料的一侧。 2D材料元件可以具有PN结结构。 2D材料元件可以包括具有不同带隙的多个2D材料。

公开(公告)号：US09583639B2

公开(公告)日：2017-02-28

申请号：US15015307

申请日：2016-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L29/788 ,  H01L21/336 ,  H01L29/786 ,  H01L29/16

CPC classification number: H01L29/78696 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/788

Abstract: Example embodiments relate to nonvolatile memory devices using a 2D material, and methods of manufacturing the nonvolatile memory device. The nonvolatile memory device includes a channel layer formed on a substrate, a gate stack that includes a gate electrode, source and drain electrodes. The channel layer has a threshold voltage greater than that of a graphene layer, and the gate stack includes a 2D material floating gate that is not in contact with the channel layer. The channel layer includes first and second material layers and a first barrier layer disposed between the first and second material layers, and the first and second material layers may contact the first barrier layer.

Abstract translation: 示例性实施例涉及使用2D材料的非易失性存储器件以及制造非易失性存储器件的方法。 非易失性存储器件包括形成在衬底上的沟道层，栅堆叠，其包括栅电极，源电极和漏电极。 沟道层具有大于石墨烯层的阈值电压的阈值电压，并且栅极堆叠包括不与沟道层接触的2D材料浮动栅极。 沟道层包括第一和第二材料层和设置在第一和第二材料层之间的第一阻挡层，并且第一和第二材料层可以接触第一阻挡层。

公开(公告)号：US11978761B2

公开(公告)日：2024-05-07

申请号：US18170977

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jaeho Lee

IPC: H01L29/10 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L28/40 ,  H01L28/75 ,  H10B12/31

Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

公开(公告)号：US11817475B2

公开(公告)日：2023-11-14

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Yong-Hee Cho ,  Seungwoo Jang ,  Younggeun Park ,  Jooho Lee

IPC: H01L29/792 ,  H01L49/02

CPC classification number: H01L28/55 ,  H01L28/65 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

公开(公告)号：US11805332B2

公开(公告)日：2023-10-31

申请号：US17377816

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Bum Choi ,  Hyunyup Kwak ,  Jaeho Lee ,  Ildo Kim ,  Seongwook Song

IPC: H04N25/60 ,  H04N5/16 ,  H04N5/213 ,  H04N5/20 ,  G06T1/20 ,  G06T1/60 ,  G06T5/00

CPC classification number: H04N25/60 ,  G06T1/20 ,  G06T1/60 ,  G06T5/006 ,  G06T5/007 ,  H04N5/165 ,  H04N5/20 ,  H04N5/213 ,  G06T5/00

Abstract: An image signal processor that generates a display signal receives an input image signal having a first pedestal level from an image sensor, generates a first signal from the input image signal, the first signal including a second pedestal level, the second pedestal level being different from the first pedestal level and being determined in accordance with the first pedestal level and a processing gain of the image signal processor, generates a second signal having the second pedestal level by amplifying the first signal in accordance with the processing gain, generates a third signal having the second pedestal level by removing a noise signal from the second signal; and generates a fourth signal by subtracting the second pedestal level from the third signal.