公开(公告)号：US20190051554A1

公开(公告)日：2019-02-14

申请号：US15834676

申请日：2017-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Chul Song ,  Tae Gon Kim ,  Kyung In Choi ,  Sun Hong Choi ,  HanMei Choi ,  Sang Hoon Han

IPC: H01L21/687 ,  H01L21/265 ,  H01L21/67 ,  H01L21/02 ,  B23B31/02 ,  H01L21/683

Abstract: A wafer support assembly can include a wafer chuck including a first surface and a second surface, where the first surface can have a central region that is configured to hold a wafer during ion implantation into the wafer, and an edge region surrounding the central region beyond an edge of the wafer when held in the central region, and the second surface opposing the first surface. An edge mask structure can cover at least a portion of the edge region of the first surface, where the edge mask structure can have a mask body with an inclined side surface facing the central region.

公开(公告)号：US10164017B2

公开(公告)日：2018-12-25

申请号：US15887773

申请日：2018-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro Sasaki ,  Bong Soo Kim ,  Tae Gon Kim ,  Yoshiya Moriyama ,  Seung Hyun Song ,  Alexander Schmidt ,  Abraham Yoo ,  Heung Soon Lee ,  Kyung In Choi

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/223 ,  H01L21/265

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

公开(公告)号：US09911809B2

公开(公告)日：2018-03-06

申请号：US15424081

申请日：2017-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro Sasaki ,  Bong Soo Kim ,  Tae Gon Kim ,  Yoshiya Moriyama ,  Seung Hyun Song ,  Alexander Schmidt ,  Abraham Yoo ,  Heung Soon Lee ,  Kyung In Choi

IPC: H01L29/10 ,  H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8238

CPC classification number: H01L29/1083 ,  H01L21/2236 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

公开(公告)号：US09608147B2

公开(公告)日：2017-03-28

申请号：US14666057

申请日：2015-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Gon Kim ,  Jinyoung Hwang ,  Eun Joo Jang

IPC: H01L31/109 ,  H01L27/146 ,  H01L31/0352

CPC classification number: H01L31/035218 ,  H01L27/14665 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/109

Abstract: A photoconductor includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer, and a second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction.

公开(公告)号：US12215266B2

公开(公告)日：2025-02-04

申请号：US18354182

申请日：2023-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/61 ,  C09K11/70 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22 ,  H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US12157848B2

公开(公告)日：2024-12-03

申请号：US18074570

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon Yang ,  Garam Park ,  Shin Ae Jun ,  Tae Gon Kim ,  Taekhoon Kim

IPC: C09K11/70 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/56 ,  C09K11/62 ,  G02F1/017 ,  G02F1/13357 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

公开(公告)号：US12130508B2

公开(公告)日：2024-10-29

申请号：US18429592

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: C09K11/62 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/88 ,  G02F1/017 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115

CPC classification number: G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US12078827B2

公开(公告)日：2024-09-03

申请号：US17546268

申请日：2021-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun Park ,  Tae Gon Kim ,  Shin Ae Jun

IPC: G02B5/20 ,  C01G9/08 ,  C01G15/00 ,  C09K11/70 ,  C09K11/88 ,  G02F1/017 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G02B5/207 ,  C01G9/08 ,  C01G15/006 ,  C09K11/70 ,  C09K11/883 ,  G02F1/01791 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/60 ,  G02B5/206 ,  G02B2207/101

Abstract: A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.

公开(公告)号：US12071577B2

公开(公告)日：2024-08-27

申请号：US17331861

申请日：2021-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun Park ,  Tae Gon Kim ,  Shin Ae Jun

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/08 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/02 ,  C09K11/0883 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

公开(公告)号：US11927838B2

公开(公告)日：2024-03-12

申请号：US18220364

申请日：2023-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: C09K11/70 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/62 ,  C09K11/88 ,  G02F1/017 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115

CPC classification number: G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.