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41.发明授权公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
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公开(公告)号：US20080149733A1
公开(公告)日：2008-06-26
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译： 本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。 本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。 根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层， 覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。
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公开(公告)号：US08604547B2
公开(公告)日：2013-12-10
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译： 本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。 本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。 根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层， 覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。
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公开(公告)号：US20090051046A1
公开(公告)日：2009-02-26
申请号：US12222555
申请日：2008-08-12
申请人： Shunpei Yamazaki , Mikio Yukawa
发明人： Shunpei Yamazaki , Mikio Yukawa
CPC分类号： H01L23/528 , H01L21/6835 , H01L21/76898 , H01L23/3675 , H01L23/481 , H01L23/53209 , H01L23/53228 , H01L23/53242 , H01L24/08 , H01L24/11 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05009 , H01L2224/08146 , H01L2224/13009 , H01L2224/13025 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/16 , H01L2224/16235 , H01L2224/2919 , H01L2224/73253 , H01L2224/80895 , H01L2224/81001 , H01L2224/811 , H01L2224/81136 , H01L2224/81801 , H01L2224/81894 , H01L2224/83138 , H01L2224/83851 , H01L2224/83907 , H01L2224/90 , H01L2224/9202 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor substrate provided with an integrated circuit is polished by CMP or the like, and the semiconductor substrate is made into a thin film by forming an embrittlement layer in the semiconductor substrate and separating a part of the semiconductor substrate; thus, semiconductor chips such as IC chips and LSI chips which are thinner than ever are obtained. Moreover, such thinned LSI chips are stacked and electrically connected through wirings penetrating through the semiconductor substrate; thus, a three dimensional semiconductor integrated circuit with improved packing density is obtained.
摘要翻译： 通过CMP等对具有集成电路的半导体基板进行研磨，通过在半导体基板上形成脆化层并分离半导体基板的一部分，将半导体基板制成薄膜; 因此，获得比以往更薄的诸如IC芯片和LSI芯片的半导体芯片。 此外，这种稀薄的LSI芯片通过穿过半导体衬底的布线堆叠并电连接; 从而获得具有改进的堆积密度的三维半导体集成电路。
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公开(公告)号：US20090140231A1
公开(公告)日：2009-06-04
申请号：US11918960
申请日：2006-04-25
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。
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46.发明授权Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer 有权一种制造半导体器件的方法，该半导体器件包括在导电层中包括绝缘体混合区的存储器件公开(公告)号：US08288197B2
公开(公告)日：2012-10-16
申请号：US11918960
申请日：2006-04-25
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。
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47.发明授权Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer 有权半导体存储器件，其中通过有机化合物层中的开口制造布线接触公开(公告)号：US07923719B2
公开(公告)日：2011-04-12
申请号：US11790348
申请日：2007-04-25
申请人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
发明人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
IPC分类号： H01L29/08 , H01L51/40 , H01L21/8242
CPC分类号： H01L27/12 , B82Y10/00 , G11C13/0014 , G11C13/004 , G11C2013/0054 , H01L27/1248 , H01L27/13 , H01L27/285
摘要： In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
摘要翻译： 在本发明中，提供了一种具有非易失性存储元件的半导体器件，可以防止在制造过程中可以写入数据的非易失性存储元件，并且可以防止通过重写数据进行伪造等。 此外，提供了其中可以实现高集成度的半导体器件。 此外，提供了可以进行小型化的半导体器件。 在具有包含第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机化合物层的存储元件的半导体器件中; 第二导电层通过形成在有机化合物层中的开口连接到与形成第一导电层的方式相同的布线。
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公开(公告)号：US07745989B2
公开(公告)日：2010-06-29
申请号：US11473332
申请日：2006-06-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
发明人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译： 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。 此外，复合层不限于两层结构。 可以采用多层结构。 然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。
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公开(公告)号：US20060214008A1
公开(公告)日：2006-09-28
申请号：US11389238
申请日：2006-03-27
IPC分类号： G06K19/06
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
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公开(公告)号：US08526216B2
公开(公告)日：2013-09-03
申请号：US13546013
申请日：2012-07-11
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
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