公开(公告)号：US20060220211A1

公开(公告)日：2006-10-05

申请号：US11440116

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

IPC分类号： H01L23/02

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

公开(公告)号：US07056810B2

公开(公告)日：2006-06-06

申请号：US10728933

申请日：2003-12-08

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

摘要翻译： 根据本发明的封装和封装的制造方法，可以将芯片形成得非常薄，并以较低的成本和较高的生产量进行制造，并且可以减少芯片厚度的变化，而不会造成后面的研磨 裂纹或抛光痕迹。 在本发明中，沉积在用作支撑介质的基板上的厚度最大为500μm的半导体膜用CW激光结晶，并且具有半导体器件的芯片形成为具有5μm的总厚度 ，优选至多2μm，通过使用结晶的半导体膜。 因此，在分离衬底之后，将芯片安装在插入器上。

公开(公告)号：US08691604B2

公开(公告)日：2014-04-08

申请号：US13587111

申请日：2012-08-16

申请人： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

发明人： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC分类号： H01L33/08

CPC分类号： H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

摘要： A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

摘要翻译： 在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在 提供金属膜。 具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

公开(公告)号：US20110180797A1

公开(公告)日：2011-07-28

申请号：US13010962

申请日：2011-01-21

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/786 ,  H01L29/04

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

摘要翻译： 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US20090152539A1

公开(公告)日：2009-06-18

申请号：US12370767

申请日：2009-02-13

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/20

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

摘要翻译： 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US07495256B2

公开(公告)日：2009-02-24

申请号：US11206000

申请日：2005-08-18

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

摘要翻译： 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US07067392B2

公开(公告)日：2006-06-27

申请号：US10685398

申请日：2003-10-16

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L21/30

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

公开(公告)号：US07923348B2

公开(公告)日：2011-04-12

申请号：US12480752

申请日：2009-06-09

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L21/30

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFF, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFF代表的各种元件（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US07511380B2

公开(公告)日：2009-03-31

申请号：US11420390

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L23/48

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片 用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。

公开(公告)号：US20060214306A1

公开(公告)日：2006-09-28

申请号：US11420390

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L23/52 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片 用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。