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公开(公告)号：US20060140461A1
公开(公告)日：2006-06-29
申请号：US11321584
申请日：2005-12-28
IPC分类号： G06K9/00
CPC分类号： G06K9/00026 , G06F1/1613 , G06F1/1684 , G06F1/169 , G06F3/0362 , G07C9/00158 , G07C2009/00095 , H04M1/66 , H04M2250/12
摘要： There is provided a mobile communication device. The mobile communication device includes a housing, a fingerprint recognition sensor for inputting fingerprint data, a rotational unit rotatably coupled to a portion of the housing where a keypad is located, the fingerprint recognition sensor being mounted on a top surface of the fingerprint recognition sensor, and a process unit for performing a user identification process by analyzing the fingerprint data inputted from the fingerprint sensor using a fingerprint recognition algorithm.
摘要翻译： 提供了移动通信设备。 移动通信装置包括壳体，用于输入指纹数据的指纹识别传感器，旋转单元，其可旋转地联接到壳体的位于键盘的部分的部分，指纹识别传感器安装在指纹识别传感器的顶表面上， 以及处理单元，用于通过使用指纹识别算法分析从指纹传感器输入的指纹数据来执行用户识别处理。
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公开(公告)号：US20060123291A1
公开(公告)日：2006-06-08
申请号：US11008298
申请日：2004-12-10
申请人： Taek Kim
发明人： Taek Kim
IPC分类号： G01R31/28
CPC分类号： G11C29/1201 , G01R31/31921 , G11C29/14 , G11C29/40 , G11C2029/2602
摘要： A parallel compression test circuit of a memory device disperses peak current and reduce noise by operating input/output amplifiers at different timings in a parallel compression test mode. The parallel compression test circuit comprises an input/output amplification control unit for activating a plurality of input/output amplifiers connected to a selected bank in a normal mode, and activating the plurality of input/output amplifiers in each bank at different timings in a test mode.
摘要翻译： 存储器件的并行压缩测试电路通过在并行压缩测试模式下以不同的定时操作输入/输出放大器来分散峰值电流并降低噪声。 并行压缩测试电路包括：输入/输出放大控制单元，用于以正常模式激活连接到所选择的存储体的多个输入/输出放大器，并且在测试中以不同的定时激活每个存储体中的多个输入/输出放大器 模式。
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公开(公告)号：US20060104326A1
公开(公告)日：2006-05-18
申请号：US11224144
申请日：2005-09-13
申请人： Taek Kim
发明人： Taek Kim
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S3/109 , H01S5/141 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18333 , H01S5/18394 , H01S5/2059 , H01S5/3412 , H01S5/34313
摘要： A surface emitting laser apparatus is disclosed. A first substrate is disposed between a first electrode layer and a first reflective layer. An active region is disposed between the first reflective layer and a second reflective layer. A current blocking layer is disposed above the active region to form an aperture. A first semiconductor layer can be disposed between a second electrode layer and the second reflective layer. The second electrode layer can have an opening substantially aligned with the aperture. A current funnel region can be located in a cavity formed between the aperture and the opening of the second electrode. The current funnel region can be configured to facilitate conduction in the cavity.
摘要翻译： 公开了一种表面发射激光装置。 第一基板设置在第一电极层和第一反射层之间。 有源区设置在第一反射层和第二反射层之间。 电流阻挡层设置在有源区上方以形成孔。 第一半导体层可以设置在第二电极层和第二反射层之间。 第二电极层可以具有基本上与孔对齐的开口。 电流漏斗区域可以位于形成在孔和第二电极的开口之间的空腔中。 电流漏斗区域可以被配置为促进空腔中的导电。
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44.发明申请Fingerprint symmetry axis extraction method and fingerprint recognition method using fingerprint symmetry axis 有权指纹对称轴提取方法和使用指纹对称轴的指纹识别方法公开(公告)号：US20050207625A1
公开(公告)日：2005-09-22
申请号：US11086872
申请日：2005-03-21
CPC分类号： G06K9/00067
摘要： A fingerprint symmetry axis extraction method is provided. The method includes detecting a core point of a fingerprint, setting imaginary symmetry axes intersecting the core point, and extracting an actual fingerprint symmetry axis from the imaginary symmetry axes. The actual fingerprint symmetry axis is one that can provide the largest symmetry measure being obtained between ridge range directions in paired blocks facing each other.
摘要翻译： 提供了一种指纹对称轴提取方法。 该方法包括检测指纹的核心点，设置与核心点相交的虚拟对称轴，以及从虚拟对称轴提取实际指纹对称轴。 实际指纹对称轴是可以提供在彼此面对的成对块中的脊范围方向之间获得的最大对称度量的轴。
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公开(公告)号：US20050116150A1
公开(公告)日：2005-06-02
申请号：US10816818
申请日：2004-04-05
CPC分类号： G01N15/0227 , G01N15/0612 , G01N21/896 , G01N21/958
摘要： Particles in a glass substrate are measured by executing following steps: sequentially conveying a plurality of glass substrates; scanning with a camera a unit area of a glass substrate in a direction of a travel path of the glass substrate and storing particle information thereof; shifting the camera to a position corresponding to a next unit area for a succeeding glass substrate; storing information on the particles in the unit area of the succeeding glass substrate obtained by scanning the glass substrate; estimating whether a sum of the respective scanned unit areas is within an allowed limit of an area of a glass substrate; and returning to the third step if an answer from the fifth step is “No” or storing information on the particles in the entire glass substrate if the answer is “Yes”.
摘要翻译： 通过执行以下步骤来测量玻璃基板中的颗粒：顺序地输送多个玻璃基板; 用相机扫描玻璃基板的单位面积，沿着玻璃基板的行进路径的方向并存储其颗粒信息; 将相机移动到对应于后续玻璃基板的下一单位区域的位置; 存储通过扫描玻璃基板获得的后续玻璃基板的单位面积中的颗粒的信息; 估计各个扫描单位面积的总和是否在玻璃基板的面积的允许极限内; 如果答案为“是”，则如果第五步骤的答案为“否”或者将玻璃基板上的颗粒的信息存储在玻璃基板整体中，则返回到第三步骤。
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公开(公告)号：US20050035391A1
公开(公告)日：2005-02-17
申请号：US10778147
申请日：2004-02-17
申请人： Deok Lee , Byeong Lee , In Jung , Yong Son , Siyoung Choi , Taek Kim
发明人： Deok Lee , Byeong Lee , In Jung , Yong Son , Siyoung Choi , Taek Kim
IPC分类号： H01L21/335 , H01L21/265 , H01L21/336 , H01L21/8234 , H01L27/108 , H01L29/786
CPC分类号： H01L21/823412 , H01L21/26513 , H01L21/26586 , H01L21/266 , H01L21/823437 , H01L29/66795 , H01L29/7851
摘要： Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclosed semiconductor fin construction will also typically include a horizontal step region at the interface between the upper region and the lower region. Also disclosed are a series of methods of manufacturing semiconductor devices incorporating semiconductor fins having this dual construction and incorporating various combinations of insulating materials such as silicon dioxide and/or silicon nitride for forming shallow trench isolation (STI) structures between adjacent semiconductor fins.
摘要翻译： 公开了一种可用于FinFET器件的半导体鳍片结构，其结合了上部区域和下部区域，其中上部区域形成有基本上垂直的侧壁，并且下部区域形成有倾斜的侧壁以产生更宽的基部。 所公开的半导体鳍片结构通常还将包括在上部区域和下部区域之间的界面处的水平台阶区域。 还公开了一系列制造具有这种双重结构的半导体鳍片的半导体器件的方法，并结合了诸如二氧化硅和/或氮化硅的绝缘材料的各种组合，用于在相邻的半导体鳍片之间形成浅沟槽隔离（STI）结构。
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公开(公告)号：US09042690B2
公开(公告)日：2015-05-26
申请号：US13614432
申请日：2012-09-13
申请人： Bok-ki Min , Taek Kim , Young-soo Park
发明人： Bok-ki Min , Taek Kim , Young-soo Park
CPC分类号： H01S5/18358 , H01S5/021 , H01S5/0215 , H01S5/02248 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18325 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/2018 , H01S5/2031
摘要： A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.
摘要翻译： 用于光子集成电路的光源可以包括形成在其中设置有光波导的基板上的反射耦合层，反射耦合层的至少一侧光学连接到光波导; 设置在反射耦合层上的光学模式取向层; 和/或设置在光学模式对准层上的上部结构，并且包括用于产生光的有源层和设置在有源层上的反射层。 光子集成电路的光源可以包括下反射层; 与下反射层光学连接的光波导; 在下反射层上的光学取向层; 光学对准层上的有源层; 和/或有源层上的上反射层。
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公开(公告)号：US09035324B2
公开(公告)日：2015-05-19
申请号：US12801275
申请日：2010-06-01
申请人： Taek Kim
发明人： Taek Kim
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20
摘要： A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other.
摘要翻译： 发光器件可以包括半导体发光二极管，其可以包括掺杂为n型的第一氮化物半导体层，以p型掺杂的第二氮化物半导体层，以及设置在第一和第二氮化物之间的第一有源层 半导体层和纳米发光二极管阵列，其中可以在半导体发光二极管上布置多个纳米发光二极管以便彼此分离。
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公开(公告)号：US08890184B2
公开(公告)日：2014-11-18
申请号：US13370996
申请日：2012-02-10
申请人： Joo-sung Kim , Taek Kim , Moon-seung Yang
发明人： Joo-sung Kim , Taek Kim , Moon-seung Yang
摘要： A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.
摘要翻译： 一种纳米结构发光器件，包括：第一类型半导体层; 多个纳米结构，每个纳米结构包括在第一类型半导体层上以三维（3D）形状生长的第一类型半导体纳米芯，形成为围绕第一类型半导体纳米芯的表面的有源层，以及第二 形成为包围有源层的表面并包括铟（In）的半导体层; 以及至少一个扁平结构层，其包括依次形成在与第一类型半导体层平行的第一类型半导体层上的平面有源层和平坦 - 二
极型半导体层。-
公开(公告)号：US07981540B2
公开(公告)日：2011-07-19
申请号：US11843874
申请日：2007-08-23
申请人： Dong-Ho Jeong , Hyung-Sik Kim , Dai-Hoe Lee , Taek Kim , Seung-Wan Woo
发明人： Dong-Ho Jeong , Hyung-Sik Kim , Dai-Hoe Lee , Taek Kim , Seung-Wan Woo
IPC分类号： H01M2/02
CPC分类号： H01M2/206 , H01M2/22 , H01M2/266 , H01M2/305 , H01M10/052
摘要： A rechargeable battery including an electrode assembly, a casing which stores the electrode assembly and which includes a support to support the electrode assembly that protrudes inwardly from in an inner surface thereof, and a cap assembly which is combined with the casing and which has an electrode terminal electrically connected to the electrode assembly.
摘要翻译： 一种可再充电电池，包括电极组件，存储电极组件的壳体，其包括用于支撑从其内表面向内突出的电极组件的支撑件，以及与壳体组合并具有电极的帽组件 端子电连接到电极组件。
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