公开(公告)号：US20120125765A1

公开(公告)日：2012-05-24

申请号：US13387789

申请日：2010-07-16

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： H05K3/16 ,  C23C14/022 ,  C23C14/024 ,  C23C14/046 ,  C23C14/165 ,  C23C14/352 ,  C23C14/568 ,  H05K3/381 ,  H05K3/388 ,  H05K2203/095 ,  H05K2203/1572

摘要： It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films.

摘要翻译： 本发明的目的是提供一种能够提高生产能力并且在制造布线板时采用溅射处理来降低运行成本的布线板等离子体处理装置。 本发明的布线基板等离子体处理装置在同一等离子体处理室中具有设置有等离子体源的表面处理部，对待处理的基板进行预处理，以及形成种子的多个溅射成膜部 层由多个膜形成。

公开(公告)号：US20110189857A1

公开(公告)日：2011-08-04

申请号：US13120554

申请日：2009-08-26

申请人： Takaaki Matsuoka ,  Tadahiro Ohmi

发明人： Takaaki Matsuoka ,  Tadahiro Ohmi

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/3212 ,  B24B37/04

摘要： Scratches and dishing are prevented from being generated when copper, which is deposited on an interlayer insulating film formed of an organic low-k film, is polished during a damascene process. In the CMP apparatus, while a rotating center axis of a rotating head, which has a polishing pad attached thereon, and a rotating center axis of a rotating table, which has a semiconductor wafer disposed face-up thereon, are aligned on the same vertical line, and the rotating head and the rotating table are spin-rotating in the same direction, the rotating head is lowered and the polishing pad touches the semiconductor wafer on the rotating table. Accordingly the polishing pad is prevented from scrubbing in a direction opposite to the rotating direction of the semiconductor wafer in the entire surface of the semiconductor wafer.

摘要翻译： 在沉积在由有机低k膜形成的层间绝缘膜上的铜在镶嵌工艺期间被抛光时，防止产生刮擦和凹陷。 在CMP装置中，在其上安装有抛光垫的旋转头的旋转中心轴和旋转台的旋转中心轴对准在同一垂直方向上 并且旋转头和旋转台沿相同方向旋转旋转，旋转头下降，抛光垫接触旋转台上的半导体晶片。 因此，防止抛光垫在半导体晶片的整个表面上沿与半导体晶片的旋转方向相反的方向擦洗。

公开(公告)号：US07803705B2

公开(公告)日：2010-09-28

申请号：US10585994

申请日：2005-01-13

申请人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

发明人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3143 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76832

摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.

摘要翻译： 由CF制成的电介质膜（91）沉积在基板上。 在电介质膜（91）上形成包含SiCN膜（93）的保护层。 作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。 当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上， 通过含有硅，碳和氮的活性物质的等离子体。

公开(公告)号：US20100117204A1

公开(公告)日：2010-05-13

申请号：US12452784

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L21/31

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

摘要翻译： 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

公开(公告)号：US20090029066A1

公开(公告)日：2009-01-29

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US20080318431A1

公开(公告)日：2008-12-25

申请号：US12092826

申请日：2006-11-07

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka

IPC分类号： H01L21/3065 ,  C23C16/54

CPC分类号： C23C16/45565 ,  C23C16/45568 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： A shower plate for plasma processing, which is formed by a plurality of pipes. A pipe includes a porous material member disposed along the pipe, which has a predetermined porosity with respect to a material gas, and which has an outwardly convex shape, and a metal member faced to the porous material member and that forms a material gas flow path in combination with the porous material member. A nozzle structure capable of releasing the material gas with a spread can be realized.

摘要翻译： 一种用于等离子体处理的喷淋板，其由多个管形成。 管道包括沿着管设置的多孔材料构件，其相对于材料气体具有预定的孔隙率，并且具有向外凸起的形状，以及面向多孔材料构件的金属构件，并且形成材料气体流动路径 与多孔材料构件组合。 可以实现能够以扩散释放材料气体的喷嘴结构。

公开(公告)号：US20080241587A1

公开(公告)日：2008-10-02

申请号：US10594495

申请日：2005-03-29

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka

IPC分类号： B05D5/12 ,  C23C16/54 ,  H01J1/63

CPC分类号： C23C14/541 ,  C23C14/12 ,  C23C14/228 ,  C23C14/243 ,  C23C14/564 ,  F28D2021/0077 ,  F28F9/026 ,  F28F13/08

摘要： For increasing the film-forming rate and enabling uniform film formation and waste elimination of raw material, a film-forming method and a film-forming apparatus can reach an evaporated film-forming material to a surface of a substrate by the flow of a transport gas so as to control the film-forming conditions by the flow of the gas. Thereby a uniform thin film can be deposited on the large-area substrate. That is, by directing the evaporated raw material toward the substrate, it is possible to increase the film-forming rate and achieve uniform film formation.

摘要翻译： 为了提高成膜速度并且能够均匀地形成成膜和废料消除原料，成膜方法和成膜装置可以通过运输流动将蒸镀膜形成材料到达基板表面 气体，以便通过气体的流动来控制成膜条件。 由此，可以在大面积基板上沉积均匀的薄膜。 也就是说，通过将蒸发的原料引向基板，可以提高成膜速度并实现均匀的成膜。

公开(公告)号：US07313931B2

公开(公告)日：2008-01-01

申请号：US11211493

申请日：2005-08-26

申请人： Takaaki Matsuoka

发明人： Takaaki Matsuoka

IPC分类号： C03B5/24

CPC分类号： H01L21/67109 ,  C23C16/4557 ,  C23C16/46 ,  C23C16/56 ,  H01L21/324 ,  H01L21/67739

摘要： After carrying an LCD substrate in a reaction container of a heat treatment unit, blowing a previously heated helium gas from a gas supply part, which opposes to the surface of the LCD substrate, over the entire surface of the LCD substrate. The temperature of the LCD substrate is raised by radiation heat of a heater and heat exchange with the helium gas. After performing CVD or annealing in the reaction container, cooling the LCD substrate by blowing a gas for heat exchange having a temperature about a room temperature from the gas supply part over the entire surface of the LCD substrate. Return the cooled LCD substrate to a carrier in the carrier chamber via a conveyance chamber.

摘要翻译： 在将热处理单元的反应容器中携带LCD基板之后，将来自与LCD基板的表面相对的气体供给部分的预先加热的氦气吹入LCD基板的整个表面。 LCD基板的温度由加热器的辐射热量和氦气的热交换而升高。 在反应容器中进行CVD或退火后，通过在LCD基板的整个表面上从气体供给部分吹出温度约为室温的热交换用气体来冷却LCD基板。 通过传送室将冷却的LCD基板返回到载体室中的载体。

公开(公告)号：US08568577B2

公开(公告)日：2013-10-29

申请号：US12594676

申请日：2008-04-04

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3455

摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

摘要翻译： 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US08535494B2

公开(公告)日：2013-09-17

申请号：US12920480

申请日：2009-03-02

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3497

摘要： Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.

摘要翻译： 提供一种旋转磁体溅射装置，其包括等离子体屏蔽构件和连接到地面的外壁，并且在等离子体屏蔽构件和外壁之间具有串联谐振电路和并联谐振电路。 串联谐振电路仅在其谐振频率下具有非常低的阻抗，而并联谐振电路仅在其谐振频率处具有非常高的阻抗。 利用这种配置，衬底RF功率和等离子体屏蔽构件之间的阻抗变得非常高，从而可以抑制待处理衬底10和等离子体屏蔽构件之间的等离子体的产生。 此外，由于在目标和地之间提供串联谐振电路，因此仅将RF功率有效地提供给基板在目标下通过的区域，从而产生自偏压。