公开(公告)号：US5989345A

公开(公告)日：1999-11-23

申请号：US069987

申请日：1998-04-30

申请人： Tatsuo Hatano

发明人： Tatsuo Hatano

IPC分类号： C23C14/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/4485 ,  C23C16/45561 ,  C23C16/52

摘要： A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least one gas storing section having a predetermined volume and to be filled with the process gas, a carrier-gas introducing pipe connecting the carrier gas source to the process chamber to introduce the carrier gas from the carrier gas source to the process chamber, a process-gas releasing pipe connected to the process-gas source, a process-gas filling circuit having at least one pipe which connects the at least one gas storing section to the process-gas releasing pipe and is provided with at least one open/shut valve, a process gas releasing circuit having at least one pipe which connects the gas storing section to the carrier-gas introducing pipe and is provided with at least one open/shut valve, a controlling section for controlling not only a communication state between the process-gas releasing pipe and the gas storing section but also a communication state between the carrier-gas introducing pipe and the gas storing section, by switchover of the open/shut valves attached to the process-gas filling circuit and the process gas releasing circuit.

摘要翻译： 一种处理气体供应装置，用于向处理室提供处理气体，其中使用处理气体的预定处理被施加到其中的物体，其包括用于提供处理气体的处理气体源，填充有载气源 具有载气，至少一个具有预定体积的气体储存部分并且被处理气体填充;载气引入管，其将载气源连接到处理室，以将载气从载气源引入到 处理室，连接到处理气体源的处理气体释放管，处理气体填充回路，其具有将至少一个气体存储部分连接到处理气体释放管的至少一个管道，并且设置在 至少一个打开/关闭阀，一个工艺气体释放回路，其具有至少一个管道，该管道将气体存储部分连接到载气引入管道，并且设有至少一个开/关阀 e，控制部分，用于不仅控制处理气体释放管和气体存储部之间的连通状态，而且还通过开/关阀的切换来控制载气导入管和气体存储部之间的连通状态 连接到处理气体填充回路和处理气体释放回路。

公开(公告)号：US5963834A

公开(公告)日：1999-10-05

申请号：US992178

申请日：1997-12-17

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45561 ,  C23C16/45574 ,  Y10S438/905

摘要： A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

摘要翻译： 一种形成CVD膜的方法，包括以下步骤：将待处理的物体加载到处理室中，并将物体定位在处理室中的支撑基座上，将物体定位在处理室中，引入处理气体 从对应的气体供给源通过相应的气体导入管道进入处理室，并且通过化学气相沉积法在处理室中的物体上形成膜，在将物体形成在物体上之后，将物体从处理室中卸下， 在从处理室卸载物体之后，对处理室内部进行干洗，并且在干燥处理室内部之后，经由相应的气体导入管将惰性气体引入到室中以清除作为 气体导入管中的残留物和室内。

公开(公告)号：US5704214A

公开(公告)日：1998-01-06

申请号：US634164

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

发明人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

IPC分类号： B01D53/34 ,  B01D8/00 ,  B01D53/58 ,  B01D53/72 ,  B01J3/00 ,  B01J3/02 ,  C23C16/44 ,  F28F3/02 ,  H01L21/205 ,  H01L21/285

CPC分类号： B01D8/00 ,  C23C16/4412 ,  F28F3/02 ,  Y02C20/30 ,  Y10S417/901

摘要： A trap body is removably attached in the housing inserted in that portion of the exhaust passage which is situated on the upstream side of a vacuum pump, and has cooling fins for cooling the tramp materials in the exhaust gas brought into contact with the cooling means, thereby liquefying the tramp materials. Therefore, the tramp materials, such as unaffected process gases, products of reaction, etc., contained in the exhaust gas flowing through the exhaust passage, are cooled and liquefied when they are touched by the trap body cooled by the cooling unit, and adhere to the surface of the trap body. Thus, the tramp materials in the exhaust gas can be removed lest they damage the vacuum pump on the downstream side or close up the exhaust passage.

摘要翻译： 捕集体可拆卸地安装在插入在位于真空泵的上游侧的排气通道的该部分中的壳体中，并且具有用于冷却与冷却装置接触的废气中的垃圾材料的冷却片， 从而液化流质物料。 因此，流经排气通路的排气中含有的未受影响的处理气体，反应产物等的流质物质被被冷却单元冷却的捕集体接触时被冷却和液化，并粘附 到陷阱体的表面。 因此，废气中的垃圾物质可以被去除，以免损坏下游侧的真空泵或关闭排气通道。

公开(公告)号：US20130252417A1

公开(公告)日：2013-09-26

申请号：US13619083

申请日：2012-09-14

申请人： Tadahiro ISHIZAKA ,  Jonathan Rullan ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Takara Kato ,  Tatsuo Hatano ,  Hiroaki Kawasaki

发明人： Tadahiro ISHIZAKA ,  Jonathan Rullan ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Takara Kato ,  Tatsuo Hatano ,  Hiroaki Kawasaki

IPC分类号： H01L21/768

CPC分类号： H01L21/76829 ,  C23C14/025 ,  C23C14/18 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.

摘要翻译： 一种薄膜形成方法，其中在要处理的目标物体的表面上形成薄膜以填充形成在目标物体的表面上的凹部的薄膜形成方法包括以下步骤：形成用于填充在靶材表面上的金属层 目的是填充形成在目标物体的表面上的凹部，并形成用于防止在目标物体的整个表面上扩散的金属膜，以覆盖用于填充的金属层。 薄膜形成方法还包括退火具有用于防止扩散形成的金属膜的目标物体的步骤。

公开(公告)号：US20110206585A1

公开(公告)日：2011-08-25

申请号：US13058243

申请日：2009-08-04

申请人： Masamichi Hara ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： B01D53/64 ,  B01D50/00

CPC分类号： F27D17/004 ,  B01D53/005 ,  B01D53/04 ,  B01D53/75 ,  B01D53/864 ,  B01D53/8668 ,  B01D53/869 ,  B01D2251/102 ,  B01D2255/20 ,  B01D2255/2045 ,  B01D2255/2047 ,  B01D2255/2073 ,  B01D2257/502 ,  B01D2257/706 ,  B01D2258/0216 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4412 ,  F27B17/0025 ,  H01L21/28556 ,  Y02C20/30 ,  Y02P70/605

摘要： A metal recovery apparatus recovers metal components from an exhaust gas exhausted from a processing chamber in which a thin film is formed on the surface of a target substrate by using a source gas formed of an organic metal compound serving as a source, and scrubs the exhaust gas. The metal recovery apparatus 66 includes a trap unit having an adsorption member for attaching thereon metal components included in the source gas by heating the exhaust gas and thus thermally decomposing an unreacted source gas included in the exhaust gas; and the scrubbing unit including a catalyzer for oxidizing and thus scrubbing harmful gas components included in the exhaust gas that has flowed through the trap unit.

摘要翻译： 金属回收装置通过使用由作为源的有机金属化合物形成的源气体从从处理室排出的废气从目标基板的表面上形成有薄膜的废气中回收金属成分， 加油站。 金属回收装置66包括具有吸附部件的收集部，该吸附部件通过加热废气而附加在源气体中的金属成分，从而热分解废气中包含的未反应的源气体; 并且所述洗涤单元包括用于氧化并因此洗涤已经流过所述捕集单元的废气中包含的有害气体组分的催化剂。

公开(公告)号：US20080311297A1

公开(公告)日：2008-12-18

申请号：US12193370

申请日：2008-08-18

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US06924223B2

公开(公告)日：2005-08-02

申请号：US10673646

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra ,  Andrew H Simon ,  John J Yurkas

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra ,  Andrew H Simon ,  John J Yurkas

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/16 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

摘要翻译： 提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。 该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。 进行该过程，直到在基底上形成具有所需厚度的金属层。 金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

公开(公告)号：US20050079708A1

公开(公告)日：2005-04-14

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

公开(公告)号：US20050069632A1

公开(公告)日：2005-03-31

申请号：US10673646

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  B05D5/12 ,  H01L21/4763

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/16 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

公开(公告)号：US06659111B1

公开(公告)日：2003-12-09

申请号：US09480680

申请日：2000-01-11

申请人： Isamu Mouri ,  Tetsuya Tamura ,  Mitsuya Ohashi ,  Tadayuki Kawashima ,  Masahiko Matsudo ,  Tatsuo Hatano

发明人： Isamu Mouri ,  Tetsuya Tamura ,  Mitsuya Ohashi ,  Tadayuki Kawashima ,  Masahiko Matsudo ,  Tatsuo Hatano

IPC分类号： B08B900

CPC分类号： C23C16/4405 ,  C23F1/12 ,  H01L21/28556 ,  Y10S438/905

摘要： A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.

摘要翻译： 清洁气体包括浓度大于或等于1体积％的HF气体和浓度范围为0.5至99体积％的含氧气体。 含氧气体包括O 2气体，O 3气体，N 2 O气体，NO气体，CO气体和CO 2气体中的至少一种。 采用清洁气体除去在真空处理装置中产生的沉积材料，用于制造Ti，W，Ta，Ru，Ir及其化合物及其合金中的至少一种的薄膜。