公开(公告)号：US20190287798A1

公开(公告)日：2019-09-19

申请号：US16398209

申请日：2019-04-29

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C09D7/63 ,  C07F7/10 ,  C07F7/08 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C09D5/00

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US20190189431A1

公开(公告)日：2019-06-20

申请号：US16255464

申请日：2019-01-23

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C07F7/10 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02164 ,  C07F7/10 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228

Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

公开(公告)号：US10316407B2

公开(公告)日：2019-06-11

申请号：US15520330

申请日：2015-10-23

Applicant: VERSUM MATERIALS US, LLC

Inventor： Xinjian Lei ,  Moo-Sung Kim ,  Matthew R. MacDonald ,  Manchao Xiao

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/48 ,  C23C16/50

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.

公开(公告)号：US10283350B2

公开(公告)日：2019-05-07

申请号：US15976028

申请日：2018-05-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C07F7/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C09D7/20 ,  C01B33/021 ,  C01B33/12 ,  C23C16/34 ,  C01B21/068 ,  C01B21/082

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20190055645A1

公开(公告)日：2019-02-21

申请号：US16079672

申请日：2017-02-22

Applicant: VERSUM MATERIALS US, LLC

Inventor： Jianheng Li ,  Xinjian Lei ,  Raymond Nicholas Vrtis ,  Robert Gordon Ridgeway ,  Dino Sinatore ,  Manchao Xiao

IPC: C23C16/32 ,  C23C16/36 ,  C23C16/513

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.

公开(公告)号：US20190017167A1

公开(公告)日：2019-01-17

申请号：US16134410

申请日：2018-09-18

Applicant: Versum Materials US, LLC

Inventor： Raymond Nicholas Vrtis ,  William Robert Entley ,  Robert Gordon Ridgeway ,  Xinjian Lei ,  John Francis Lehmann ,  Manchao Xiao

IPC: C23C16/40 ,  C23C16/50 ,  C23C16/36 ,  H01L21/02 ,  C23C16/34 ,  C23C16/48

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.

公开(公告)号：US20170204120A1

公开(公告)日：2017-07-20

申请号：US15474789

申请日：2017-03-30

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Richard Ho ,  Xinjian Lei

IPC: C07F7/10 ,  C07F7/02

CPC classification number: C07F7/025 ,  C07F7/10

Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.

公开(公告)号：US20170183502A1

公开(公告)日：2017-06-29

申请号：US15461999

申请日：2017-03-17

Applicant: VERSUM MATERIALS US, LLC

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: C09D1/00 ,  C01B33/021 ,  C01B33/12 ,  C23C16/455 ,  C01B21/082 ,  C07F7/02 ,  C23C16/40 ,  H01L21/02 ,  C01B21/068

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US12057310B2

公开(公告)日：2024-08-06

申请号：US17501842

申请日：2021-10-14

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Matthew R MacDonald

IPC: H01L21/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02222 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/0234

Abstract: Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

公开(公告)号：US12018040B2

公开(公告)日：2024-06-25

申请号：US17406975

申请日：2021-08-19

Applicant: VERSUM MATERIALS US, LLC

Inventor： Matthew R. Macdonald ,  Xinjian Lei ,  Manchao Xiao ,  Meiliang Wang

IPC: C07F7/21 ,  C23C16/40

CPC classification number: C07F7/21 ,  C23C16/402

Abstract: Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.