公开(公告)号：US07694688B2

公开(公告)日：2010-04-13

申请号：US11620610

申请日：2007-01-05

申请人： Paul Lester ,  Scott Meyer ,  Wyland L. Atkins ,  Douglas Richards ,  Constantin Predoaica ,  Jeffrey Hudgens ,  Charles Carlson ,  Penchala Kankanala ,  Mike Rice ,  James S. Papanu ,  Evanson G. Baiya ,  John J. Rosato

发明人： Paul Lester ,  Scott Meyer ,  Wyland L. Atkins ,  Douglas Richards ,  Constantin Predoaica ,  Jeffrey Hudgens ,  Charles Carlson ,  Penchala Kankanala ,  Mike Rice ,  James S. Papanu ,  Evanson G. Baiya ,  John J. Rosato

IPC分类号： B08B3/04

CPC分类号： H01L21/67766 ,  H01L21/67051 ,  H01L21/68707 ,  Y10S134/902

摘要： The present invention generally provides an apparatus and method for processing and transferring substrates in a multi-chamber processing system that has the capability of receiving and performing single substrate processing steps performed in parallel, while using the many favorable aspects of batch processing. Embodiments of the invention described herein are adapted to maximize system throughput, reduce system cost, reduce cost per substrate during processing, increase system reliability, improve the device yield on the processed substrates, and reduce system footprint. In one embodiment, the cluster tool is adapted to perform a wet/clean process sequence in which various substrate cleaning processes are performed on a substrate in the cluster tool.

摘要翻译： 本发明通常提供了一种在多室处理系统中处理和传送基板的装置和方法，该多室处理系统具有在使用批处理的许多有利方面的同时并行执行的单个基板处理步骤的能力。 本文描述的本发明的实施例适用于最大化系统吞吐量，降低系统成本，在处理期间降低每个基板的成本，增加系统可靠性，提高处理的基板上的装置产量，并减少系统占用面积。 在一个实施例中，群集工具适于执行湿/清洁处理序列，其中在群集工具中的基板上执行各种基板清洁处理。

公开(公告)号：US07648916B2

公开(公告)日：2010-01-19

申请号：US11467842

申请日：2006-08-28

申请人： Elizabeth G. Pavel ,  Mark N. Kawaguchi ,  James S. Papanu

发明人： Elizabeth G. Pavel ,  Mark N. Kawaguchi ,  James S. Papanu

IPC分类号： H01L21/302

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3342

摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

摘要翻译： 本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。 在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。

公开(公告)号：US07604708B2

公开(公告)日：2009-10-20

申请号：US10778898

申请日：2004-02-12

申请人： Bingxi Sun Wood ,  Mark N. Kawaguchi ,  James S. Papanu ,  Roderick C. Mosely ,  Chiukun Steven Lai ,  Chien-Teh Kao ,  Hua Ai ,  Wei W. Wang

发明人： Bingxi Sun Wood ,  Mark N. Kawaguchi ,  James S. Papanu ,  Roderick C. Mosely ,  Chiukun Steven Lai ,  Chien-Teh Kao ,  Hua Ai ,  Wei W. Wang

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  C23C14/022 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32871 ,  H01J37/34 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/76814 ,  H01L21/76838

摘要： A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

摘要翻译： 基板清洁装置具有远程源以远程激励含氢气体以形成具有离子含氢物质与自由基含氢物质的第一比例的通电气体。 该设备具有带有基板支撑件的处理室，用于过滤远程激励的气体以形成具有离子含氢物质与含氢的物质的第二比例的过滤的通电气体的离子过滤器，第二比例不同于 第一比例和气体分配器，以将过滤的通电气体引入室中。

公开(公告)号：US07432177B2

公开(公告)日：2008-10-07

申请号：US11154211

申请日：2005-06-15

申请人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

发明人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

IPC分类号： H01L21/04

CPC分类号： H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

摘要翻译： 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

公开(公告)号：US07374696B2

公开(公告)日：2008-05-20

申请号：US10777026

申请日：2004-02-11

申请人： Mark N. Kawaguchi ,  James S. Papanu ,  Scott Williams ,  Matthew Fenton Davis

发明人： Mark N. Kawaguchi ,  James S. Papanu ,  Scott Williams ,  Matthew Fenton Davis

IPC分类号： B44C1/22

CPC分类号： H01L21/02071 ,  H01L21/31116

摘要： The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

摘要翻译： 本发明提供了一种用于从基材中除去含卤素残余物的方法和集成系统，包括蚀刻基板，加热基板并将加热的基板暴露于去除含卤素残余物的等离子体。

公开(公告)号：US08318589B2

公开(公告)日：2012-11-27

申请号：US12748780

申请日：2010-03-29

申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/20

CPC分类号： C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US20100311204A1

公开(公告)日：2010-12-09

申请号：US12748790

申请日：2010-03-29

申请人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L31/18 ,  H01L21/283

CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过“冷”溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US07846347B2

公开(公告)日：2010-12-07

申请号：US11779972

申请日：2007-07-19

申请人： Mark N. Kawaguchi ,  James S. Papanu ,  Scott Williams ,  Matthew Fenton Davis

发明人： Mark N. Kawaguchi ,  James S. Papanu ,  Scott Williams ,  Matthew Fenton Davis

IPC分类号： C03C15/00

CPC分类号： H01L21/02071 ,  H01L21/31116

摘要： The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

摘要翻译： 本发明提供了一种用于从基材中除去含卤素残余物的方法和集成系统，包括蚀刻基板，加热基板并将加热的基板暴露于去除含卤素残余物的等离子体。

公开(公告)号：US6120608A

公开(公告)日：2000-09-19

申请号：US816629

申请日：1997-03-13

申请人： Norman Shendon ,  James S. Papanu ,  David Palagashvili

发明人： Norman Shendon ,  James S. Papanu ,  David Palagashvili

IPC分类号： C23C16/458 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/68785 ,  C23C16/4586 ,  H01J37/32082

摘要： Apparatus and method for mounting a workpiece support platform or platen within a semiconductor process vacuum chamber to provide electrical or thermal insulation and mechanical stability, but yet minimize mechanical stresses due to differential thermal expansion between the platen and the dielectric spacer. Specifically, the invention includes a workpiece support platen having a rear surface abutting a front surface of a platen-support shelf. The shelf preferably provides electrical or thermal insulation between the platen and the wall of the vacuum chamber. The shelf is attached to the enclosure of the vacuum chamber, but the platen is not rigidly attached to the shelf. Instead, a pressure actuator, such as a spring or pneumatic piston, presses the platen against the shelf. In one embodiment, the pressure actuator can be turned off to allow the platen to expand or contract during periods of heating or cooling, such as when the chamber is turned off or on before or after maintenance. When the temperature of the platen is stable during processing of semiconductor workpieces, the pressure actuator can be turned on to hold the platen firmly in position against the shelf. In a second embodiment, the pressure actuator is adjusted to apply a pressure high enough to inhibit inadvertent movement of the platen, yet low enough to accommodate differential thermal expansion between the platen and the shelf by the platen sliding across the front surface of the shelf, thereby minimizing mechanical stresses between the platen and the shelf.

摘要翻译： 用于将工件支撑平台或压板安装在半导体工艺真空室内以提供电或热绝缘和机械稳定性的装置和方法，但是由于压板和电介质间隔件之间的不同热膨胀而使机械应力最小化。 具体而言，本发明包括工件支撑台板，该工件支承台板具有与台板支撑架的前表面邻接的后表面。 搁架优选地在压板和真空室的壁之间提供电或热绝缘。 搁板连接到真空室的外壳，但是压板没有刚性地连接到搁板。 相反，诸如弹簧或气动活塞的压力致动器将压板压靠在搁架上。 在一个实施例中，可以关闭压力致动器，以允许压板在加热或冷却期间膨胀或收缩，例如当室被关闭或在维护之前或之后打开时。 当在半导体工件的加工期间压板的温度稳定时，可以打开压力致动器以将压板牢固地保持在搁板上的位置。 在第二实施例中，压力致动器被调节以施加足够高的压力以防止压板的无意移动，但是足够低以通过压板滑动穿过搁板的前表面来适应压板和搁架之间的差别热膨胀， 从而最小化压板和搁架之间的机械应力。

公开(公告)号：US5885358A

公开(公告)日：1999-03-23

申请号：US682803

申请日：1996-07-09

申请人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

发明人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/455 ,  H01J37/3244

摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

摘要翻译： 一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。 气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。 根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。 采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。