公开(公告)号：US07485902B2

公开(公告)日：2009-02-03

申请号：US10663714

申请日：2003-09-17

申请人： Daijiro Inoue ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takashi Kano ,  Tsutomu Yamaguchi

发明人： Daijiro Inoue ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takashi Kano ,  Tsutomu Yamaguchi

IPC分类号： H01L27/15

CPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/38

摘要： A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.

摘要翻译： 提供了能够通过降低接触层中的光吸收损失而提高发光效率的氮化物系半导体发光元件。 这种氮化物基半导体发光器件包括形成在衬底上的第一导电型第一氮化物基半导体层，形成在第一氮化物基半导体层上的有源层，由氮化物基半导体层，第二 形成在有源层上的导电型第二氮化物基半导体层，形成在第二氮化物基半导体层上的未掺杂的接触层和形成在未掺杂的接触层上的电极。

公开(公告)号：US20080315221A1

公开(公告)日：2008-12-25

申请号：US12139807

申请日：2008-06-16

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US20070223548A1

公开(公告)日：2007-09-27

申请号：US11723642

申请日：2007-03-21

申请人： Hiroki Ohbo ,  Yasuyuki Bessho ,  Kazushi Mori ,  Yasuhiko Nomura

发明人： Hiroki Ohbo ,  Yasuyuki Bessho ,  Kazushi Mori ,  Yasuhiko Nomura

IPC分类号： H01S5/00

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01S5/0021 ,  H01S5/0222 ,  H01S5/028 ,  H01S5/32341 ,  H01L2924/00014

摘要： In a semiconductor laser device including a package for airtight sealing, and a semiconductor laser element provided in the package, a moisture concentration inside the package is 2500 ppm or less and arithmetic mean roughness in at least one portion of an inner surface of the package is 0.3 μm or less.

摘要翻译： 在包括用于气密密封的封装的半导体激光器件和设置在封装中的半导体激光元件中，封装内的水分浓度为2500ppm以下，封装的内表面的至少一部分的算术平均粗糙度为 0.3毫米以下。

公开(公告)号：US20070057337A1

公开(公告)日：2007-03-15

申请号：US11518235

申请日：2006-09-11

申请人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L27/14

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

摘要翻译： 半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层 活动层 氮化物半导体层由半导体衬底的相同构成元件形成。 氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

公开(公告)号：US20060227838A1

公开(公告)日：2006-10-12

申请号：US11390460

申请日：2006-03-28

申请人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

发明人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

公开(公告)号：US20060045156A1

公开(公告)日：2006-03-02

申请号：US11215066

申请日：2005-08-31

申请人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono

发明人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01S5/4087 ,  H01L2924/00014

摘要： A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

摘要翻译： 在半导体激光装置中使用的单芯片半导体激光装置具有将红色半导体激光装置和红外半导体激光装置堆叠在蓝紫色半导体激光装置上的结构。 通过在GaN衬底上形成半导体层来制造蓝紫色半导体激光器件。 通过在GaAs衬底上形成半导体层来制造红色半导体激光器件和红外半导体激光器件。 GaAs的弹性模量小于GaN的弹性模量。 红色半导体激光器件和红外半导体激光器件的长度比蓝紫色半导体激光器件的长度长。

公开(公告)号：US20060018353A1

公开(公告)日：2006-01-26

申请号：US11233088

申请日：2005-09-23

申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S5/00

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

公开(公告)号：US06967985B2

公开(公告)日：2005-11-22

申请号：US10361618

申请日：2003-02-11

申请人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

发明人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

IPC分类号： H01S5/183 ,  H01S3/08

CPC分类号： H01S5/18355 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S2301/14

摘要： A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.

摘要翻译： 获得能够基本上完全控制偏振面的表面发射半导体激光器件。 该表面发射半导体激光器件包括第一多层反射器，形成在第一多层反射器上的发射层和形成在发射层上的第二多层反射器，以及至少第一多层反射器或 第二多层反射器包括在规定时间内以条纹方式工作的条纹部分。

公开(公告)号：US20050232321A1

公开(公告)日：2005-10-20

申请号：US11078626

申请日：2005-03-14

申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  H01S5/40

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00014

摘要： A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

摘要翻译： 半导体激光装置包括发射蓝紫色激光束的第一半导体激光装置，发射红色激光束的第二半导体激光装置和导电封装体。 第一半导体激光器件具有p侧焊盘电极和n侧电极。 第一半导体激光器件的p侧焊盘电极和n侧电极与封装主体电隔离。 第一半导体激光器件的p侧焊盘电极与产生正电位的驱动电路连接，而其n侧电极与产生负电位的直流电源连接。

公开(公告)号：US06954478B2

公开(公告)日：2005-10-11

申请号：US10356504

申请日：2003-02-03

申请人： Yasuhiko Nomura ,  Takashi Kano

发明人： Yasuhiko Nomura ,  Takashi Kano

IPC分类号： H01S5/20 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

摘要翻译： 获得能够延长寿命的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层， 发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有 比导光层更大的带隙。