公开(公告)号：US20080185331A1

公开(公告)日：2008-08-07

申请号：US12071429

申请日：2008-02-21

申请人： Hiroji Sato ,  Yasushi Ueki ,  Shigeru Takahashi ,  Takaya Ogawa

发明人： Hiroji Sato ,  Yasushi Ueki ,  Shigeru Takahashi ,  Takaya Ogawa

IPC分类号： B01D35/00

CPC分类号： F02M37/221 ,  B01D35/0273 ,  B01D36/003 ,  B01D39/1623 ,  F02M2037/228

摘要： A fuel filter device includes a bag-shaped filter member and is adapted to be attached to communicate an inner space of the filter member with a fuel suction opening in a fuel tank. The filter member is configured in a multilayer structure. At least one layer of the filter member is configured to serve as an inhibition layer having a structure to prevent water in a fuel tank form coming into the inner space of the filter member by a pressure applied to the filter member when the water is frozen.

摘要翻译： 燃料过滤装置包括袋形过滤构件，并且适于连接以使过滤构件的内部空间与燃料箱中的燃料吸入口连通。 过滤构件被构造成多层结构。 过滤构件的至少一层构造成用作具有防止水在冷冻时施加到过滤构件上的压力的燃料箱形式的水进入过滤构件的内部空间的结构的抑制层。

公开(公告)号：US20070182269A1

公开(公告)日：2007-08-09

申请号：US11621296

申请日：2007-01-09

申请人： Shigeru Takahashi ,  Naoki Tadokoro ,  Takuma Saito

发明人： Shigeru Takahashi ,  Naoki Tadokoro ,  Takuma Saito

IPC分类号： H01H51/22 ,  H02K7/14 ,  H02K9/06 ,  H02K23/04 ,  H02K1/06

CPC分类号： H02K9/06 ,  B25F5/02 ,  H02K5/148 ,  H02K5/15 ,  H02K5/1732 ,  H02K7/145 ,  H02K15/02

摘要： A power tool 1 includes a cylindrical-shaped yoke 31, magnets 32 provided in the interior of the yoke 31, an armature 41 disposed rotatably in the interior of the yoke 31, a cooling fan 7 rotatably secured to the armature 41, a fan guide 8 disposed on the periphery of the cooling fan 7, and a cylindrical-shaped housing 2 for storing the yoke 31 therein. The fan guide 8 is contacted with the axial-direction one end face of the yoke 31, and the fan guide 8 is engaged with the yoke 31 in the rotation direction thereof.

摘要翻译： 电动工具1包括圆柱形磁轭31，设置在磁轭31的内部的磁体32，可旋转地设置在磁轭31的内部的电枢41，可旋转地固定到电枢41的冷却风扇7，风扇导向件 设置在冷却风扇7的周边上的圆柱形壳体2和用于将轭31存储在其中的圆柱形壳体2。 风扇引导件8与轭31的轴向一端面相接触，并且风扇引导件8沿其旋转方向与轭31接合。

公开(公告)号：US20050269884A1

公开(公告)日：2005-12-08

申请号：US11100612

申请日：2005-04-07

申请人： Takuya Teranishi ,  Shigeru Takahashi

发明人： Takuya Teranishi ,  Shigeru Takahashi

IPC分类号： B25F5/00 ,  B25F5/02 ,  H02K7/14 ,  H02K9/06 ,  H02K9/28

CPC分类号： H02K9/28 ,  B25F5/008 ,  H02K7/145 ,  H02K9/06 ,  H02K2205/12

摘要： A shielding member is provided to cover the outer wall of the armature on a line segment connecting the inner wall at the front end of a magnet to the edge of a vent. The shielding member is ring-shaped and configured by a disk-shaped base section, a hole section formed at the center of the base portion, through which the armature can be passed, and a cylindrical section which extends forward from the base section. The shielding member is provided on the front of the yoke so that it is located apart from the magnet.

摘要翻译： 设置屏蔽构件以在将磁体前端的内壁连接到通气口的边缘的线段上覆盖电枢的外壁。 屏蔽部件是环状的，由盘形基部构成，形成在基部的中心的孔部，电枢可以通过该孔部，以及从基部向前延伸的圆筒部。 遮蔽构件设置在轭的前部，使得其与磁体分离。

公开(公告)号：US06489550B1

公开(公告)日：2002-12-03

申请号：US09704184

申请日：2000-10-31

申请人： Shigeru Takahashi ,  Akira Matsui

发明人： Shigeru Takahashi ,  Akira Matsui

IPC分类号： G10H306

CPC分类号： G10H1/24 ,  G10H1/00 ,  G10H1/0008 ,  G10H2210/225 ,  G10H2220/411 ,  G10H2220/415 ,  G10H2240/311

摘要： A musical apparatus which outputs music under the control of various musical control instructions where the desired musical control instructions are reliably determined by the movement of an object in an operation space, and where the musical control instructions are varied by changing the state of motion of the object in space. The musical apparatus performs musical control instructions whose contents are based on the state of motion of an object in motion within a specified operation space. The musical apparatus may have at least one light source which shines light into said operation space, at least one light sensor which receives light which has been reflected by an object in the space so that it has at least two light paths which reach from the light source to the light sensor via the object, so that a detection values is output according to the quantity of light received via a respective one of the light paths, and a musical controller which outputs music and controls a musical function when the correlation between the current values of the detection values of the various paths satisfies a specified relationship.

摘要翻译： 一种音乐装置，其在各种音乐控制指令的控制下输出音乐，其中通过操作空间中的对象的移动可靠地确定所需的音乐控制指令，并且通过改变音乐控制指令的运动状态来改变音乐控制指令 对象在空间中。乐器执行音乐控制指令，其内容基于在指定的操作空间内运动的对象的运动状态。 乐器可以具有将光照射到所述操作空间中的至少一个光源，至少一个光传感器，其接收被该空间中的物体反射的光，使得其具有从光到达的至少两个光路 通过对象将光源传送到光传感器，使得根据经由相应的一个光路接收的光量输出检测值;以及音乐控制器，其输出音乐并控制音乐功能，当电流 各路径的检测值的值满足规定的关系。

公开(公告)号：US5731219A

公开(公告)日：1998-03-24

申请号：US458616

申请日：1995-06-02

申请人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

发明人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

IPC分类号： H01L27/11 ,  H01L21/70

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903 ,  Y10S257/904

摘要： Herein disclosed is a semiconductor integrated circuit device comprising an SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs, and a method of forming this device. The gate electrodes of the drive MISFETs and of the transfer MISFETs of the memory cell, and the word lines, are individually formed of different conductive layers. The two transfer MISFETs of the memory cell have their individual gate electrodes connected with two respective word lines spaced from each other and extended in an identical direction. The source line is formed of a conductive layer identical to that of the word line. An oxidation resisting film is formed on the gate electrodes of the drive MISFETs so as to reduce stress caused by oxidization of edge portions of these gate electrodes, and to reduce a resulting leakage current. A thickness of an oxide film formed on gate electrodes of the transfer MISFETs and word lines is thicker than an oxide film formed on gate electrodes of the drive MISFETs, so that data line pads can be formed in self-alignment with the oxide film and side wall spacers on the gate electrodes of the transfer MISFETs.

摘要翻译： 这里公开了一种半导体集成电路器件，其特征在于包括SRAM，其SRAM具有通过字线和驱动MISFET来控制的转移MISFET构成的存储单元，以及形成该器件的方法。 驱动MISFET的栅电极和存储单元的转移MISFET以及字线分别由不同的导电层形成。 存储器单元的两个转移MISFET的各自的栅极电极与彼此间隔开并沿相同方向延伸的两个相应字线连接。 源极线由与字线的导电层相同的导电层形成。 在驱动MISFET的栅电极上形成抗氧化膜，以减少由这些栅电极的边缘部分的氧化引起的应力，并减少产生的漏电流。 形成在转移MISFET和字线的栅电极上的氧化膜的厚度比形成在驱动MISFET的栅电极上的氧化膜厚，使得数据线焊盘可以形成为与氧化膜和侧面自对准 传输MISFET的栅电极上的壁间隔物。

公开(公告)号：US5656836A

公开(公告)日：1997-08-12

申请号：US460129

申请日：1995-06-02

申请人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

发明人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

IPC分类号： H01L27/11 ,  H01L27/108 ,  H01L29/76

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903 ,  Y10S257/904

摘要： Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and the word lines are individually formed of different conductive layers. The drive MISFETs and the transfer MISFETs are individually arranged to cross each other in the gate length direction. The word lines are extended in the gate length direction of the gate electrodes of the drive MISFETs and caused to cross the gate electrodes of the drive MISFETs partially.The two transfer MISFETs of the memory cell have their individual gate electrodes connected-with two respective word lines spaced from each other and extended in an identical direction. The region defined by the two word lines is arranged therein with the two drive MISFETs and the source lines.

摘要翻译： 这里公开了一种半导体集成电路器件，其包括具有其存储单元的SRAM，SRAM由通过字线控制的转移MISFET和驱动MISFET构成。 驱动MISFET的栅电极和存储单元的转移MISFET的栅电极和字线分别由不同的导电层形成。 驱动MISFET和转移MISFET分别布置成在栅极长度方向上彼此交叉。 字线在驱动MISFET的栅电极的栅极长度方向上延伸，并且部分地与驱动MISFET的栅电极交叉。 存储单元的两个转移MISFET具有彼此间隔开并沿相同方向延伸的两个相应字线连接的各自的栅电极。 由两个字线限定的区域配置有两个驱动MISFET和源极线。

公开(公告)号：US5636275A

公开(公告)日：1997-06-03

申请号：US598209

申请日：1996-02-06

申请人： Hisamitsu Takagi ,  Takahiro Agai ,  Tatsuzi Shigeta ,  Shigeru Takahashi ,  Yosiaki Kato

发明人： Hisamitsu Takagi ,  Takahiro Agai ,  Tatsuzi Shigeta ,  Shigeru Takahashi ,  Yosiaki Kato

IPC分类号： H05K5/03 ,  E05F1/12 ,  F16C11/04 ,  F16C11/10 ,  H04M1/02 ,  H04M1/03 ,  H04Q7/32 ,  H04M1/00

CPC分类号： H04M1/0216 ,  E05F1/1215 ,  E05F1/1223 ,  E05Y2900/20 ,  E05Y2900/606

摘要： A hinge mechanism for use in a portable telephone in which a foldable lid is rotatably supported by the hinge mechanism to rotate the foldable lid between an opened position and a closed position, includes a rotary shaft on which the lid is rotatably supported. A first spring, fitted to the shaft, generates a biasing force to rotate the lid on the shaft in a first direction from the closed position to the opened position. A second spring, fitted to the shaft, generates a biasing force to rotate the lid on the shaft in a second direction opposite to the first direction after the lid is further rotated from the opened position in the first direction. A first stopper restricts a rotation of the shaft in the first direction to cancel the biasing force of the first spring when the lid is further rotated on the shaft in the first direction from the opened position. A second stopper restricts a rotation of the shaft in the second direction to cancel the biasing force of the second spring when the lid is rotated on the shaft in the second direction back to the opened position after the lid is further rotated in the first direction from the opened position.

摘要翻译： 一种用于便携式电话的铰链机构，其中可折叠的盖子由铰链机构可旋转地支撑以在可打开位置和关闭位置之间旋转可折叠的盖子，包括旋转轴，盖子可旋转地支撑在该旋转轴上。 安装在轴上的第一弹簧产生一个偏压力，以使第一方向上的盖在轴上旋转，从关闭位置到打开位置。 在盖从第一方向上的打开位置进一步旋转之后，安装在轴上的第二弹簧产生偏压力，以使第二方向与第一方向相反地旋转轴上的盖。 第一止动件在第一方向上限制轴的旋转以抵消第一弹簧的偏置力，当盖从打开位置沿第一方向在轴上沿轴转动时。 当第二方向上的盖沿第一方向进一步旋转时，第二方向限制第二方向上的轴的旋转以抵消第二弹簧的偏置力，当盖沿着第二方向在轴上旋转回到打开位置时 打开的位置。

公开(公告)号：US5572480A

公开(公告)日：1996-11-05

申请号：US459961

申请日：1995-06-02

申请人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

发明人： Shuji Ikeda ,  Satoshi Meguro ,  Soichiro Hashiba ,  Isamu Kuramoto ,  Atsuyoshi Koike ,  Katsuro Sasaki ,  Koichiro Ishibashi ,  Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Nobuyuki Moriwaki ,  Shigeru Takahashi ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Seigou Yukutake

IPC分类号： H01L27/11 ,  G11C8/00

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903

摘要： Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and the word lines are individually formed of different conductive layers. The drive MISFETs and the transfer MISFETs are individually arranged to cross each other in the gate length direction. The word lines are extended in the gate length direction of the gate electrodes of the drive MISFETs and caused to cross the gate electrodes of the drive MISFETs partially.

摘要翻译： 这里公开了一种半导体集成电路器件，其包括具有其存储单元的SRAM，SRAM由通过字线控制的转移MISFET和驱动MISFET构成。 驱动MISFET的栅电极和存储单元的转移MISFET的栅电极和字线分别由不同的导电层形成。 驱动MISFET和转移MISFET分别布置成在栅极长度方向上彼此交叉。 字线在驱动MISFET的栅电极的栅极长度方向上延伸，并且部分地与驱动MISFET的栅电极交叉。

公开(公告)号：US5544125A

公开(公告)日：1996-08-06

申请号：US383866

申请日：1995-02-06

申请人： Yuji Yokoyama ,  Takashi Akioka ,  Masahiro Iwamura ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Tatsumi Yamauchi ,  Shigeru Takahashi ,  Nobuyuki Gotou ,  Akira Ide

发明人： Yuji Yokoyama ,  Takashi Akioka ,  Masahiro Iwamura ,  Atsushi Hiraishi ,  Yutaka Kobayashi ,  Tatsumi Yamauchi ,  Shigeru Takahashi ,  Nobuyuki Gotou ,  Akira Ide

IPC分类号： G11C7/10 ,  G11C8/10 ,  H03K19/0948 ,  G11C8/00

CPC分类号： H03K19/0948 ,  G11C7/1051 ,  G11C7/1078 ,  G11C8/10

摘要： An arrangement which is particularly effective for decoders in semiconductor memory circuits which use, for example, common NMOS to receive one input for a plurality of logic decoder gates is provided includes a plurality of logic gates each having a first input terminal for respectively receiving first input signals, and each being coupled to a common node. In one embodiment, first and second switching elements are also coupled to the common node. The first and second switching elements are both coupled to a second input terminal for receiving a second input signal which is common to the plurality of logic gates, and both operate complementary to one another in response to the second input signal. An improved read/write arrangement is also provided for such semiconductor memory circuits which includes circuitry to prevent connection of a common read line to the data lines during the writing operation. This enhances the writing speed by removing the load of the common read line during writing.

摘要翻译： 提供了对于使用例如公共NMOS来接收多个逻辑解码器门的一个输入的半导体存储器电路中的解码器特别有效的装置，其包括多个逻辑门，每个逻辑门具有用于分别接收第一输入的第一输入端 信号，并且每个都耦合到公共节点。 在一个实施例中，第一和第二开关元件也耦合到公共节点。 第一和第二开关元件都耦合到第二输入端子，用于接收多个逻辑门公共的第二输入信号，并且它们都响应于第二输入信号互相互补。 还提供了一种改进的读/写布置，用于这样的半导体存储器电路，其包括在写入操作期间防止公共读取线与数据线连接的电路。 这通过在写入期间去除公共读取线的负载来增强写入速度。

公开(公告)号：US5502820A

公开(公告)日：1996-03-26

申请号：US385656

申请日：1995-02-08

申请人： Atsushi Hiraishi ,  Takashi Akioka ,  Yutaka Kobayashi ,  Yuji Yokoyama ,  Masahiro Iwamura ,  Tatsumi Yamauchi ,  Shigeru Takahashi ,  Hideaki Uchida ,  Akira Ide

发明人： Atsushi Hiraishi ,  Takashi Akioka ,  Yutaka Kobayashi ,  Yuji Yokoyama ,  Masahiro Iwamura ,  Tatsumi Yamauchi ,  Shigeru Takahashi ,  Hideaki Uchida ,  Akira Ide

IPC分类号： G11C11/417 ,  G11C11/409 ,  H03K17/16 ,  H03K17/687 ,  H03K19/003 ,  H03K19/0175 ,  H03K19/0185 ,  H03K19/08 ,  H03K19/088 ,  H03K19/0944 ,  G06F13/00

CPC分类号： H03K19/09448 ,  H03K17/164 ,  H03K19/00361

摘要： An improved buffer circuit arrangement is provided which is particularly useful for semiconductor integrated circuit semiconductor memories and microprocessors. The buffer circuit is capable of switching large loads in various types of LSIs, and features a low noise and high speed circuit operation. This is accomplished by a parallel connection of output transistors in an output buffer circuit, and by differentiating the starting time of operation between the output transistors connected in parallel without using a delay circuit. For example, differentiating the starting times can be achieved by either providing the transistors with different characteristics from one another or the driving circuits with different characteristics from one another. Another aspect of the circuit is the provision of a two-level preset arrangement which presets the output node of the circuit to predetermined values before the input signals are applied.

摘要翻译： 提供了一种改进的缓冲电路装置，其特别适用于半导体集成电路半导体存储器和微处理器。 缓冲电路能够切换各种类型的LSI中的大负载，并且具有低噪声和高速电路操作。 这通过输出缓冲器电路中的输出晶体管的并联连接，并且通过区分并联连接的输出晶体管之间的操作的起始时间而不使用延迟电路来实现。 例如，通过提供具有彼此不同特性的晶体管或具有彼此不同特性的驱动电路，可以实现区分起始时间。 电路的另一方面是提供两级预置布置，其在施加输入信号之前将电路的输出节点预设为预定值。