公开(公告)号：US07888681B2

公开(公告)日：2011-02-15

申请号：US12222672

申请日：2008-08-14

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yukie Suzuki ,  Yoshiyuki Kurokawa

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yukie Suzuki ,  Yoshiyuki Kurokawa

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1233 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78696

摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.

摘要翻译： 证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。 显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。 微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。

公开(公告)号：US07871849B2

公开(公告)日：2011-01-18

申请号：US12697650

申请日：2010-02-01

申请人： Yasuyuki Arai

发明人： Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L31/0236 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/036 ,  H01L31/03682 ,  H01L31/0725 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion device typified by a solar cell, having an excellent photoelectric conversion characteristic with a silicon semiconductor material effectively utilized. The point is that the surface of a single crystal semiconductor layer bonded to a supporting substrate is irradiated with a pulsed laser beam to become rough. The single crystal semiconductor layer is irradiated with the pulsed laser beam in an atmosphere containing an inert gas and oxygen so that the surface thereof is made rough. With the roughness of surface of the single crystal semiconductor layer, light reflection is suppressed so that incident light can be trapped. Accordingly, even when the thickness of the single crystal semiconductor layer is equal to or greater than 0.1 μm and equal to or less than 10 μm, path length of incident light is substantially increased so that the amount of light absorption can be increased.

摘要翻译： 一种以太阳能电池为代表的具有优异的光电转换特性的硅光半导体材料的制造方法。 关键在于，用脉冲激光束照射与支撑基板接合的单晶半导体层的表面变粗糙。 在包含惰性气体和氧气的气氛中用脉冲激光束照射单晶半导体层，使得其表面粗糙。 随着单晶半导体层表面的粗糙度，光反射被抑制，从而可以捕获入射光。 因此，即使当单晶半导体层的厚度等于或大于0.1μm且等于或小于10μm时，入射光的路径长度显着增加，从而可以增加光吸收量。

公开(公告)号：US07781770B2

公开(公告)日：2010-08-24

申请号：US12485958

申请日：2009-06-17

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  G02F1/133

CPC分类号： H01L27/124 ,  G02F1/133553 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02686 ,  H01L21/3003 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L27/3279 ,  H01L29/66537 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/78696

摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

摘要翻译： 具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布​​线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。 该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线 连接到第二绝缘层上的栅电极，用于将源极布线和半导体层连接在一起的连接电极和连接到半导体层的像素电极。

公开(公告)号：US07776663B2

公开(公告)日：2010-08-17

申请号：US12057994

申请日：2008-03-28

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： H01L21/02

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/13452 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/68368 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/82007 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

摘要翻译： 在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。 形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。 半导体集成电路具有与显示装置的显示屏（即，矩阵电路）的一侧基本相同的长度，并且通过从另一基板剥离然后在第一基板上形成。 另外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对，包括矩阵电路和外围驱动电路，并且至少具有与 矩阵电路和外围驱动电路。 隔板设置在第一和第二基板之间。 在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。 将液晶材料填充在由密封材料包围的区域内。 在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

公开(公告)号：US07745991B2

公开(公告)日：2010-06-29

申请号：US10885953

申请日：2004-07-08

申请人： Shunpei Yamazaki ,  Kunitaka Yamamoto ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Kunitaka Yamamoto ,  Yasuyuki Arai

IPC分类号： H01J1/62

CPC分类号： H01L51/0005 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645 ,  H01L51/5228 ,  H01L51/524

摘要： The present invention aims to provide simple, high-speed processing for the formation of an EL layer by an ink-jet method. A method of manufacturing an electro-optical device having good operation performance and high reliability, and in particular, a method of manufacturing an EL display device, is provided. The present invention forms EL layers continuously across a plurality of pixels when the EL layers are formed by the ink-jet method. Specifically, with respect to m columns and n rows of pixel electrodes arranged in a matrix state, the EL layers are formed so as to form stripes with respect to one certain selected row or one column. The EL layers may also be formed having an oblong shape or a rectangular shape with respect to each pixel electrode.

摘要翻译： 本发明旨在通过喷墨法提供用于形成EL层的简单的高速处理。 提供了具有良好的操作性能和高可靠性的电光装置的制造方法，特别是制造EL显示装置的方法。 当通过喷墨法形成EL层时，本发明在多个像素上连续地形成EL层。 具体而言，相对于以矩阵状排列的m列，n行的像素电极，形成EL层，以形成相对于一定的一行或一列的条纹。 EL层也可以相对于每个像素电极形成为长方形或矩形。

公开(公告)号：US07723725B2

公开(公告)日：2010-05-25

申请号：US11649315

申请日：2007-01-03

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Yasuyuki Arai

IPC分类号： H01L31/00

CPC分类号： H01L27/1248 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1203 ,  H01L27/1255 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66772 ,  H01L29/78633

摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.

摘要翻译： 提供了一种有源矩阵型显示装置，其中显示装置由具有能够高速运行的绝缘栅极FET的驱动电路形成，并且即使每单位像素的像素电极的面积变小，足够的存储 可以获得电容。 在包括具有绝缘栅场效应晶体管的有源矩阵电路的半导体器件中，至少具有由单晶半导体制成的有源层，绝缘栅场效应晶体管上形成有机树脂绝缘层，存储电容由 形成在有机树脂绝缘层上的遮光层，形成为与遮光层紧密接触的电介质层，以及连接到绝缘栅场效应晶体管的光反射电极。

公开(公告)号：US07692199B2

公开(公告)日：2010-04-06

申请号：US11120999

申请日：2005-05-04

申请人： Yasuyuki Arai

发明人： Yasuyuki Arai

IPC分类号： H01L27/15

CPC分类号： H01L51/5203 ,  F21W2131/101 ,  F21Y2105/00 ,  H01L33/382 ,  H01L51/5212 ,  H01L2251/5338 ,  H01L2251/5361

摘要： An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

摘要翻译： 本发明的目的是提供一种照明装置，当照明装置具有大面积时，能够抑制发光区域的亮度不均匀性。 包括发光材料的层形成在第一电极和第二电极之间，并且第三电极形成为通过形成在第二电极中的开口和包括发光材料的层与第一电极连接。 通过将第三电极通过开口电连接到第一电极，可以降低由于第一电极的较高电阻率引起的电压降的影响。

公开(公告)号：US07652294B2

公开(公告)日：2010-01-26

申请号：US12232310

申请日：2008-09-15

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： A display device having a gate wiring including a first conductive material, an insulating film over the gate wiring, a semiconductor film over the insulating film, a source electrode and a drain electrode including a second conductive material formed over a source region and a drain region, and a pixel electrode including a transparent conductive film. The device includes a first terminal portion electrically connected to the gate wiring and having a first layer including a same material as the first conductive material and a second layer including a same material as the transparent conductive film. The device further includes a second terminal portion electrically connected to the source wiring and having a first layer including a same material as the second conductive material and a second layer including a same material as the transparent conductive film. An IC chip may be electrically connected to at least one of the first and second terminal portions.

摘要翻译： 一种显示装置，其具有包括第一导电材料的栅极布线，栅极布线上的绝缘膜，绝缘膜上的半导体膜，源电极和漏电极，其包括在源区和漏区上形成的第二导电材料 以及包括透明导电膜的像素电极。 该器件包括电连接到栅极布线并具有包含与第一导电材料相同的材料的第一层的第一端子部分和与透明导电膜相同的材料的第二层。 该装置还包括电连接到源极布线并具有包括与第二导电材料相同的材料的第一层的第二端子部分和包括与透明导电膜相同的材料的第二层。 IC芯片可以电连接到第一和第二端子部分中的至少一个。

公开(公告)号：US07651896B2

公开(公告)日：2010-01-26

申请号：US11844134

申请日：2007-08-23

申请人： Tatsuya Honda ,  Yasuyuki Arai

发明人： Tatsuya Honda ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L27/1225 ,  H01L27/3244 ,  H01L29/7869 ,  Y10T428/12917

摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。 一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

公开(公告)号：US20090290082A1

公开(公告)日：2009-11-26

申请号：US12512173

申请日：2009-07-30

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC分类号： G02F1/136 ,  H01L33/00 ,  H01L21/8234 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78621 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2001/136245 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78672 ,  H01L29/78675 ,  Y10S438/919

摘要： A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

摘要翻译： 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，LDD结构。 像素TFT具有LDD结构。 设置在像素单元中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在层间绝缘膜 设置在与其紧密接触的绝缘膜上。 这些处理步骤使用6到8张照片掩模。