公开(公告)号：US07759657B2

公开(公告)日：2010-07-20

申请号：US12142081

申请日：2008-06-19

Applicant: Daniel R. Tieger ,  Patrick R. Splinter

Inventor： Daniel R. Tieger ,  Patrick R. Splinter

IPC: H01J37/317 ,  C23C14/14

CPC classification number: H01L21/26513 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/31701 ,  H01L21/2658 ,  Y10S438/918

Abstract: Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract translation: 将离子化的多面体硼烷簇或选择的离子化的下质量副产物植入工件中的方法通常包括蒸发并离子化离子源中的多面体甲烷簇分子以产生等离子体并产生电离的多面体甲烷簇分子及其电离的较低质量副产物。 然后提取等离子体内的离子化多面体甲烷簇分子和较低质量副产物以形成离子束。 使用质量分析器磁体对离子束进行质量分析，以允许选定的离子化多面体甲烷簇分子或选定的离子化的下质量副产物通过其并植入工件中。

公开(公告)号：US07750314B2

公开(公告)日：2010-07-06

申请号：US12183787

申请日：2008-07-31

Applicant: William F. DiVergilio

Inventor： William F. DiVergilio

IPC: H01J27/00 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/31701

Abstract: An elevated temperature RF ion source system, comprising an ion source body, an RF antenna coil external to the ion source body, a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil, at least one power supply, a gas delivery system operatively coupled to the ion source body, a vacuum condition between the outside surface of the ion source body and the RF antenna coil, the RF antenna coil operatively coupled to the at least one power supply, and a water cooling system operatively coupled to the RF antenna coil and the vacuum enclosure.

Abstract translation: 一种高温RF离子源系统，包括离子源体，离子源体外部的RF天线线圈，围绕离子源体的外表面和RF天线线圈的真空外壳，至少一个电源， 可操作地耦合到离子源体的气体输送系统，离子源体的外表面和RF天线线圈之间的真空条件，可操作地耦合到至少一个电源的RF天线线圈和可操作地连接到水冷系统的水冷系统 耦合到RF天线线圈和真空外壳。

公开(公告)号：US20100142114A1

公开(公告)日：2010-06-10

申请号：US12331813

申请日：2008-12-10

Applicant: Ashwin M. Purohit ,  Marvin R. LaFontaine ,  William D. Lee ,  Richard J. Rzeszut

Inventor： Ashwin M. Purohit ,  Marvin R. LaFontaine ,  William D. Lee ,  Richard J. Rzeszut

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H02N13/00

Abstract: The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.

Abstract translation: 本发明涉及一种具有由TT-Kote制成的顺应层的静电卡盘（ESC）和形成ESC用夹板的方法。 ESC包括具有低摩擦表面的柔顺层，用于减少或消除由热膨胀产生的微粒。 该方法包括形成用于包括陶瓷材料和陶瓷表面的基底的夹紧构件，并且用包含有机硅化物或TT-Kote的柔性层涂覆陶瓷表面。

公开(公告)号：US07705328B2

公开(公告)日：2010-04-27

申请号：US11932117

申请日：2007-10-31

Applicant: Shu Satoh ,  Manny Sieradzki

Inventor： Shu Satoh ,  Manny Sieradzki

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/153

Abstract: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

Abstract translation: 一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束 光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

公开(公告)号：US07683348B2

公开(公告)日：2010-03-23

申请号：US11548295

申请日：2006-10-11

Applicant: W Davis Lee ,  Neil K Colvin

Inventor： W Davis Lee ,  Neil K Colvin

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

Abstract translation: 法拉第杯结构，用于加工工具。 杯结构具有连接到电路的导电冲击板，用于监测撞击撞击板的离子以获得离子束电流的指示。 导电冲击板由用于将离子束截断截面分成区域或区段的掩模前面。 掩模包括延伸到冲击板的壁，用于阻止到达传感器的离子和从传感器移出的颗粒进入加工工具的抽空区域。

公开(公告)号：US07655930B2

公开(公告)日：2010-02-02

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

IPC: H01J37/08 ,  H01J7/24

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US07629597B2

公开(公告)日：2009-12-08

申请号：US11506998

申请日：2006-08-18

Applicant: Teng-Chao Tao ,  Philip J Ring

Inventor： Teng-Chao Tao ,  Philip J Ring

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/16 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01L21/265 ,  H01L21/67213

Abstract: A system for controlling the temperature of a semiconductor workpiece processing tool and surrounding structure, thereby reducing the deposition rates within an ion implanter. A faraday flag structure comprising a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the and a base supporting the strike plate that includes a thermally conductive material surrounding at least a portion of an outer perimeter of the strike plate. The faraday flag structure base defines a conduit for routing coolant through the thermally conductive material surrounding the strike plate. Positioned below the faraday flag is a thermally controlled cold trap that receives and retains foreign material appearing in ion implanter.

Abstract translation: 一种用于控制半导体工件加工工具和周围结构的温度的系统，从而降低离子注入机内的沉积速率。 法拉第标志结构，其包括耦合到电路的导电冲击板，用于监测撞击撞击板的离子，以获得支撑击打板的指示和支撑击打板的基座，该基座包括导热材料，该导热材料围绕该导电材料的外周的至少一部分 打板 法拉第标志结构基座定义了用于通过围绕撞击板的导热材料布置冷却剂的导管。 位于法拉第标志下方的是一种热控冷阱，可以接收和保留出现在离子注入机中的异物。

公开(公告)号：US20090277871A1

公开(公告)日：2009-11-12

申请号：US12398390

申请日：2009-03-05

Applicant: Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

Inventor： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

IPC: C23F1/00 ,  C23F1/08

CPC classification number: G03F7/38 ,  G03F7/427 ,  H01J37/32449 ,  H01L21/31138

Abstract: Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.

Abstract translation: 用于剥离高剂量离子注入的光致抗蚀剂同时尽量减少底物损失的方法。 这些方法通常包括在等离子体介质剥离过程之前和/或期间对衬底表面的钝化。 通过在等离子体介质剥离过程之前和/或期间钝化衬底表面，在等离子体剥离期间，氧化显着降低，从而导致衬底损耗降低。

公开(公告)号：US20090200493A1

公开(公告)日：2009-08-13

申请号：US12030306

申请日：2008-02-13

Applicant: Ivan L. Berry, III

Inventor： Ivan L. Berry, III

IPC: H01J37/08

CPC classification number: H01J37/32431 ,  H01J2237/16 ,  H01J2237/184 ,  H01J2237/204 ,  H01J2237/31701

Abstract: A system and methods are provided for mitigating or removing workpiece surface contaminants or conditions. Methods of the invention provide treatment of the wafer surface to provide a known surface condition. The surface condition can then be maintained during and following implantation of the workpiece surface with a dopant.

Abstract translation: 提供了减轻或去除工件表面污染物或条件的系统和方法。 本发明的方法提供晶片表面的处理以提供已知的表面状态。 然后可以在用掺杂剂注入工件表面期间和之后维持表面状态。

公开(公告)号：US20090189766A1

公开(公告)日：2009-07-30

申请号：US12022300

申请日：2008-01-30

Applicant: Kan Ota ,  Michael Chen ,  David K. Bernhardt

Inventor： Kan Ota ,  Michael Chen ,  David K. Bernhardt

IPC: G08B13/22

CPC classification number: G08B13/2402

Abstract: The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer arm located inside a vacuum chamber of an ion implantation system, a reader located outside the vacuum chamber, and wherein the RFID tag provides an indication relating to whether or not a wafer is secured by the transfer arm.

Abstract translation: 本发明涉及远程检测晶片的存在的系统和方法，其包括无源RFID电路，其中RFID电路附接到位于离子注入系统的真空室内的传递臂的端部，位于 在真空室外部，并且其中RFID标签提供与转印臂是否固定晶片有关的指示。