公开(公告)号：US07473909B2

公开(公告)日：2009-01-06

申请号：US11633694

申请日：2006-12-04

申请人： Ivan L. Berry, III

发明人： Ivan L. Berry, III

IPC分类号： H01J37/08

CPC分类号： G01N23/2255 ,  G01N2223/6116 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2443 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24514

摘要： An ion implantation system utilizing detected ion induced luminescence as feedback control that comprises, a wafer, a spectrometer, a photodetector, an ion source generator, wherein the ion source generator is configured to implant the wafer with ions, and the photodetector is configured to detect ion induced luminescence both on and off the wafer.

摘要翻译： 使用检测离子诱导发光作为反馈控制的离子注入系统，其包括晶片，光谱仪，光电检测器，离子源发生器，其中离子源发生器被配置为用离子植入晶片，并且光电检测器被配置为检测 离子诱导的晶体上和下的发光。

公开(公告)号：US06913796B2

公开(公告)日：2005-07-05

申请号：US09952649

申请日：2001-09-14

申请人： Ralph Albano ,  Cory Bargeron ,  Ivan L. Berry, III ,  Jeff Bremmer ,  Phil Dembowski ,  Orlando Escorcia ,  Qingyuan Han ,  Nick Sbrockey ,  Carlo Waldfried

发明人： Ralph Albano ,  Cory Bargeron ,  Ivan L. Berry, III ,  Jeff Bremmer ,  Phil Dembowski ,  Orlando Escorcia ,  Qingyuan Han ,  Nick Sbrockey ,  Carlo Waldfried

IPC分类号： C08J9/36 ,  C01B33/12 ,  C23C16/56 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H05H1/24 ,  B05D3/06 ,  C08F2/52 ,  C08J7/18

CPC分类号： C01B33/126 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/31663

摘要： Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus and hardness.

摘要翻译： 低介电常数多孔材料具有改善的弹性模量和硬度。 制造这种多孔材料的过程涉及提供多孔介电材料和等离子体固化多孔介电材料以产生等离子体固化的多孔电介质材料。 多孔介电材料的等离子体固化产生具有改善的模量和硬度的材料。 弹性模量的改善通常大于或约50％，更典型地大于或约100％，更典型地大于或约200％。 硬度的改善通常大于或约50％。 等离子体固化的多孔电介质材料可以任选地进行后等离子体处理。 与等离子体固化的多孔介电材料相比，等离子体固化的多孔介电材料的后等离子体处理降低了材料的介电常数，同时保持了改进的弹性模量和硬度。 后等离子体处理的等离子体固化的多孔介电材料的介电常数在约1.1和约3.5之间，并且具有改善的弹性模量和硬度。

公开(公告)号：US20090200493A1

公开(公告)日：2009-08-13

申请号：US12030306

申请日：2008-02-13

申请人： Ivan L. Berry, III

发明人： Ivan L. Berry, III

IPC分类号： H01J37/08

CPC分类号： H01J37/32431 ,  H01J2237/16 ,  H01J2237/184 ,  H01J2237/204 ,  H01J2237/31701

摘要： A system and methods are provided for mitigating or removing workpiece surface contaminants or conditions. Methods of the invention provide treatment of the wafer surface to provide a known surface condition. The surface condition can then be maintained during and following implantation of the workpiece surface with a dopant.

摘要翻译： 提供了减轻或去除工件表面污染物或条件的系统和方法。 本发明的方法提供晶片表面的处理以提供已知的表面状态。 然后可以在用掺杂剂注入工件表面期间和之后维持表面状态。

公开(公告)号：US06759098B2

公开(公告)日：2004-07-06

申请号：US09906276

申请日：2001-07-16

申请人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

发明人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

IPC分类号： B05D302

CPC分类号： C01B33/126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

摘要翻译： 具有改善弹性模量的低介电常数薄膜材料。 制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂分子制备的多孔甲基倍半硅氧烷基介电膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。 多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。 弹性模量的改善通常大于或约100％，更典型地大于或约200％。 等离子体固化的多孔膜材料可以任选地退火。 与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。 退火的等离子体固化膜的介电常数介于约1.1和约2.4之间，弹性模量提高。

公开(公告)号：US06300017B1

公开(公告)日：2001-10-09

申请号：US09137504

申请日：1998-08-20

申请人： J. Brett Rolfson ,  Ivan L. Berry, III

发明人： J. Brett Rolfson ,  Ivan L. Berry, III

IPC分类号： G03F900

CPC分类号： G03F1/20

摘要： In one aspect, the invention encompasses a method of manufacturing a stencil mask comprising: a) defining a plurality of opening locations within a substrate; b) providing a dopant within the substrate, the dopant being provided in a pattern to form a plurality of first regions doped to a concentration with a dopant and one or more second regions not doped to the concentration with the dopant, individual first regions surrounding individual opening locations; c) forming a plurality of openings within the opening locations, the individual openings extending into the substrate; and d) forming a stencil mask from the substrate having the openings extending therein. In another aspect, the invention encompasses a stencil mask comprising: a) a substrate; b) a plurality of openings extending through the substrate; and c) a pattern of dopant within the substrate, the pattern comprising a plurality of first locations doped to a concentration with a dopant and one or more second locations not doped to the concentration with the dopant, individual first locations surrounding individual openings.

摘要翻译： 在一个方面，本发明包括一种制造模板掩模的方法，包括：a）在衬底内限定多个开口位置; b）在衬底内提供掺杂剂，所述掺杂剂以图案形式提供，以形成多个第一区域，所述第一区域掺杂浓度为掺杂剂和一个或多个第二区域，所述第二区域未掺杂到掺杂剂的浓度，所述第一区域围绕个体 开放地点; c）在打开位置内形成多个开口，各个开口延伸到基板中; 以及d）从其中延伸有开口的基底形成模板掩模。 在另一方面，本发明包括一种模板掩模，其包括：a）基材; b）延伸穿过基底的多个开口; 以及c）所述衬底内的掺杂剂图案，所述图案包括掺杂到掺杂剂浓度的多个第一位置和未掺杂到掺杂剂浓度的一个或多个第二位置，围绕各个开口的各个第一位置。

公开(公告)号：US07888661B2

公开(公告)日：2011-02-15

申请号：US12030306

申请日：2008-02-13

申请人： Ivan L. Berry, III

发明人： Ivan L. Berry, III

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/32431 ,  H01J2237/16 ,  H01J2237/184 ,  H01J2237/204 ,  H01J2237/31701

摘要： A system and methods are provided for mitigating or removing workpiece surface contaminants or conditions. Methods of the invention provide treatment of the wafer surface to provide a known surface condition. The surface condition can then be maintained during and following implantation of the workpiece surface with a dopant.

摘要翻译： 提供了减轻或去除工件表面污染物或条件的系统和方法。 本发明的方法提供晶片表面的处理以提供已知的表面状态。 然后可以在用掺杂剂注入工件表面期间和之后维持表面状态。

公开(公告)号：US07011868B2

公开(公告)日：2006-03-14

申请号：US10627894

申请日：2003-07-24

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

IPC分类号： C08J7/18 ,  H01L21/26 ,  H01L21/3105 ,  H01L21/314 ,  H05L1/24

CPC分类号： H01L21/3105 ,  C01B33/126 ,  C23C16/56 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3124 ,  H01L21/31695 ,  Y10T428/31663

摘要： Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR §1.72(b).

摘要翻译： 低介电常数多孔材料具有改善的弹性模量和材料硬度。 制造这种多孔材料的过程包括提供多孔电介质材料，并用无氟等离子体气体等离子体固化多孔介电材料，以产生无氟等离子体固化的多孔电介质材料。 多孔电介质材料的无氟等离子体固化产生具有改善的模量和材料硬度以及相当的介电常数的材料。 弹性模量的改善通常大于或约50％，更典型地大于或约100％。 材料硬度的改善通常大于或约50％。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求37 CFR§1.72（b）的范围或含义。

公开(公告)号：US06756085B2

公开(公告)日：2004-06-29

申请号：US10623729

申请日：2003-07-21

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan L. Berry, III

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan L. Berry, III

IPC分类号： C08J704

CPC分类号： C09D183/02 ,  C09D183/04 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

摘要翻译： 低介电常数材料具有改善的弹性模量和材料硬度。 制造这种材料的过程包括提供介电材料和紫外线（UV）固化材料以产生UV固化的介电材料。 UV固化产生具有改善的模量和材料硬度的材料。 改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行后UV处理。 与UV固化的介电材料相比，后UV处理降低了材料的介电常数，同时保持了改进的弹性模量和材料硬度。 紫外线固化的电介质可以另外表现出比炉固化过程更低的固化总热量预算。

公开(公告)号：US06558755B2

公开(公告)日：2003-05-06

申请号：US09681332

申请日：2001-03-19

申请人： Ivan L. Berry, III ,  Todd Bridgewater ,  Wei Chen ,  Qingyuan Han ,  Eric S. Moyer ,  Michael J. Spaulding ,  Carlo Waldfried

发明人： Ivan L. Berry, III ,  Todd Bridgewater ,  Wei Chen ,  Qingyuan Han ,  Eric S. Moyer ,  Michael J. Spaulding ,  Carlo Waldfried

IPC分类号： C08J718

CPC分类号： H01L21/02134 ,  C01B33/126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

摘要翻译： 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。 网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。 成本计算在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。 与等离子体固化的多孔网络涂层相比，等离子体固化涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度通常为或约475℃以下，退火时间通常不超过或约180秒。 退火的等离子体固化涂层的介电常数范围为约1.1至约2.4，并具有改善的弹性模量。