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公开(公告)号：US09991128B2
公开(公告)日：2018-06-05
申请号：US15421189
申请日：2017-01-31
发明人： Zhongkui Tan , Yiting Zhang , Ying Wu , Qing Xu , Qian Fu , Yoko Yamaguchi , Lin Cui
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32 , C23C16/52 , H01L21/311 , C23C16/455 , H01L21/308 , H01L21/3213 , H01L21/683
CPC分类号： H01L21/3065 , C23C16/45536 , C23C16/45544 , C23C16/52 , H01J37/32082 , H01J37/32119 , H01J37/32183 , H01J37/32449 , H01J37/32697 , H01J37/32715 , H01J37/32926 , H01J2237/332 , H01J2237/334 , H01L21/3085 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139 , H01L21/67069 , H01L21/67259 , H01L21/6833
摘要： Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.
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公开(公告)号：US09947512B2
公开(公告)日：2018-04-17
申请号：US13280750
申请日：2011-10-25
申请人： Rish Chhatre , David Schaefer
发明人： Rish Chhatre , David Schaefer
IPC分类号： H01J37/32
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3244
摘要： An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bore and cylindrical recess configured to receive an annular insert having a bayonet opening. The gas injector assembly includes a gas injector, an RF shield surrounding the gas injector, and a faceplate surrounding the RF shield, the faceplate including projections at the bottom thereof for engaging the bayonet opening in the annular insert. The window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.
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公开(公告)号：US20180019099A1
公开(公告)日：2018-01-18
申请号：US15714231
申请日：2017-09-25
发明人： Tetsuhiro IWAI , Shogo OKITA
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32119
摘要： A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove.
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44.发明申请公开(公告)号：US20170323767A1
公开(公告)日：2017-11-09
申请号：US15152301
申请日：2016-05-11
发明人： Saeng Hyun CHO
CPC分类号： H01J37/3211 , H01J37/32119 , H01J37/32449 , H01J37/32834
摘要： An Dielectric window of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, a dielectric window 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the dielectric window 100 is integrated from a plurality of dielectric members 110 divided in a horizontal direction, is provided, so it is possible to minimize power loss by the replacement of a dielectric supporting structure at a region where an antenna is installed, with ceramic.
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公开(公告)号：US20170092466A1
公开(公告)日：2017-03-30
申请号：US15378914
申请日：2016-12-14
发明人： Qiaoli SONG , Jianhui NAN
CPC分类号： H01J37/3211 , H01F27/28 , H01F38/10 , H01F38/14 , H01J37/321 , H01J37/32119 , H01J37/32183 , H01J2237/3344
摘要： The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the to external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses.
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公开(公告)号：US20170084427A1
公开(公告)日：2017-03-23
申请号：US15179389
申请日：2016-06-10
发明人： Jung-hwan UM , Sung-moon PARK , Dong-wook KIM
IPC分类号： H01J37/32
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211 , H01J37/3266
摘要： A plasma process apparatus including a process chamber defined by an outer wall and a dielectric window, the dielectric window including a first dielectric material and covering an upper portion of the outer wall, the dielectric window including a top surface facing outside of the process chamber and a bottom surface facing insider of the process chamber, the dielectric window further including at least one magnetic-field control groove at the top surface of the dielectric window, and a coil antenna over the dielectric window and configured to receive RF power, the coil antenna including an inner coil and an outer coil, the inner coil over a center of the dielectric window, the outer coil over an edge of the dielectric window and surrounding the inner coil may be provided.
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公开(公告)号：US20170074646A1
公开(公告)日：2017-03-16
申请号：US14855242
申请日：2015-09-15
发明人： Amir Yasseri , Duane Outka , Michael Lopez
CPC分类号： G01B11/30 , H01J37/32009 , H01J37/32119 , H01J37/32935
摘要： A method for treating a nonhomogeneous material surface of an object is provided. A plurality of test patches of the surface is treated for different amounts of time wherein the plurality of test patches have a total surface area. A property of each test patch is measured. A calibration curve of the property is generated with respect to time. The calibration curve and a target property are used to obtain a target time. A surface of the object with a surface area, which is greater than the total surface area of the plurality of test patches, is treated for the target time.
摘要翻译： 提供了一种用于处理物体的非均匀材料表面的方法。 将多个表面的测试贴片处理不同的时间量，其中多个测试贴片具有总表面积。 测量每个测试补丁的属性。 产生相对于时间的属性的校准曲线。 使用校准曲线和目标属性来获得目标时间。 处理具有大于多个测试片的总表面积的表面积的物体的表面，以达到目标时间。
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公开(公告)号：US20170040146A1
公开(公告)日：2017-02-09
申请号：US14817115
申请日：2015-08-03
发明人： Lihua Li HUANG , Hong SHIH , Lin XU , John DAUGHERTY
CPC分类号： H01J37/32495 , C23C14/06 , C23C16/30 , H01J37/32119 , H01J37/3244 , H01J37/32477 , H01J37/32504 , H01J37/32642 , H01J37/32715
摘要： An apparatus for use in a plasma processing chamber is provided. The apparatus comprises part body and a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering a surface of the part body.
摘要翻译： 提供了一种用于等离子体处理室的设备。 该装置包括部件体和厚度不超过30微米的涂层，其基本上由覆盖部件主体表面的氟氧化物中的镧系元素或III族或IV族元素组成。
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公开(公告)号：US20160358748A1
公开(公告)日：2016-12-08
申请号：US14897423
申请日：2014-03-31
发明人： Toshihiro Hayami , Toshiya Miyazaki
CPC分类号： H01J37/3211 , H01J37/32119 , H01J37/3244 , H01J2237/334 , H05H1/46 , H05H2001/4667
摘要： A plasma etching apparatus includes a chamber having a processing space and a plasma generating space 4 defined therein and a coil 20 wound around the processing chamber, the coil 20 has at least three inward projecting portions 21 formed thereon which project inward in a radial direction with respect to a pitch circle P defined outside a portion of the processing chamber 2 corresponding to the plasma generating space 4, and the at least three inward projecting portions 21 are arranged at equal intervals along a circumferential direction of the pitch circle P.
摘要翻译： 等离子体蚀刻装置包括具有处理空间的腔室和限定在其中的等离子体产生空间4和缠绕在处理室上的线圈20，线圈20具有形成在其上的至少三个向内突出的部分21，径向向内突出， 相对于对应于等离子体产生空间4的处理室2的一部分外部限定的节圆P，并且至少三个向内突出部21沿着节圆P的圆周方向以相等的间隔布置。
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公开(公告)号：US09431216B2
公开(公告)日：2016-08-30
申请号：US14066631
申请日：2013-10-29
发明人： Songlin Xu , Gang Shi , Tuqiang Ni
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32642 , H01L21/3065 , H01L21/31
摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.
摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部并且位于衬底支撑件的上方，但位于气体注入器的大部分之下，以便重新定向处理气体的流动。
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