公开(公告)号：US20100019233A1

公开(公告)日：2010-01-28

申请号：US12502606

申请日：2009-07-14

申请人： Noriyuki Kawashima ,  Takahiro Ohe

发明人： Noriyuki Kawashima ,  Takahiro Ohe

IPC分类号： H01L51/30 ,  H01L51/00

CPC分类号： H01L51/0566 ,  H01L51/0004 ,  H01L51/0537 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.

摘要翻译： 半导体复合膜包括含有有机半导体材料的半导体薄膜层，由从有机半导体材料在膜厚度方向相分离的聚合物材料形成的绝缘薄膜层和分散在至少一个 的半导体薄膜层和绝缘薄膜层。

公开(公告)号：US20090189148A1

公开(公告)日：2009-07-30

申请号：US12067251

申请日：2006-09-28

申请人： Mayuka Araumi ,  Ikue Kawashima ,  Akishige Murakami ,  Takumi Yamaga

发明人： Mayuka Araumi ,  Ikue Kawashima ,  Akishige Murakami ,  Takumi Yamaga

IPC分类号： H01L51/30 ,  H01L33/00 ,  H01L51/40 ,  H01L51/05

CPC分类号： H01L51/0537 ,  H01L27/283 ,  H01L51/0035

摘要： A transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered, wherein the insulating film between layers comprises a mixture of organic materials and particles.

摘要翻译： 使用在基板上使用有机半导体层的晶体管，与有机半导体层接触的层之间的绝缘膜和通过设置在层之间的绝缘膜中的通孔与晶体管电接触的上电极的晶体管元件，其中绝缘 层之间的膜包括有机材料和颗粒的混合物。

公开(公告)号：US20090146202A1

公开(公告)日：2009-06-11

申请号：US12302200

申请日：2007-05-22

申请人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

发明人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

IPC分类号： H01L29/786 ,  H01L21/4763 ,  H01L21/8239

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  G11C2213/56 ,  H01L21/28273 ,  H01L51/0529 ,  H01L51/0537 ,  Y10S977/783 ,  Y10S977/943

摘要： An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

摘要翻译： 公开了一种有机存储器件，其具有活性层，有机电介质材料的膜的至少一个电荷存储层和介电材料膜上或电介质材料膜中的电荷存储材料的纳米颗粒和/或纳米颗粒。 通过有机介电膜的有机介电材料将纳米结构和/或纳米颗粒中的每一个与纳米结构和/或纳米颗粒中的其它纳米结构和/或纳米颗粒分离。 还公开了一种制造有机存储器件的方法。

公开(公告)号：US07473652B2

公开(公告)日：2009-01-06

申请号：US11428084

申请日：2006-06-30

申请人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

发明人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02118 ,  H01G4/18 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H05K1/162 ,  Y10T428/31692

摘要： Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.

摘要翻译： 用于电子器件的有机聚合物，其中所述聚合物包括下式的重复单元：其中：每个R 1独立地为H，芳基，Cl，Br，I或包含可交联基团的有机基团; 每个R 2独立地为H，芳基或R 4; 每个R 3独立地为H或甲基; 每个R 5独立地是烷基，卤素或R 4; 每个R 4独立地是包含至少一个CN基团并且每个CN基团的分子量为约30至约200的有机基团; 并且n = 0-3; 条件是聚合物中至少一个重复单元包括R4。 这些聚合物可用于诸如有机薄膜晶体管的电子器件中。

公开(公告)号：US20080242112A1

公开(公告)日：2008-10-02

申请号：US11695131

申请日：2007-04-02

申请人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

发明人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

IPC分类号： H01L21/31

CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

公开(公告)号：US20080230774A1

公开(公告)日：2008-09-25

申请号：US12055894

申请日：2008-03-26

申请人： Katsura HIRAI

发明人： Katsura HIRAI

IPC分类号： H01L29/08

CPC分类号： H01L51/0541 ,  G02F1/1368 ,  G02F2202/02 ,  H01L27/28 ,  H01L27/283 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/102 ,  H01L51/107

摘要： An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

摘要翻译： 公开了一种通过该方法制造的有机薄膜晶体管制造方法和有机薄膜晶体管，该方法包括以下步骤：a）在衬底上形成栅电极，b）在衬底上形成栅极绝缘层，c ）在所述衬底上形成有机半导体层，d）在所述有机半导体层上形成有机半导体层保护层，e）去除所述有机半导体层保护层的一部分，以及f）形成源电极和漏电极 去除了有机半导体层保护层的部分，使得源电极和漏电极接触有机半导体层。

公开(公告)号：US20080063795A1

公开(公告)日：2008-03-13

申请号：US11782889

申请日：2007-07-25

申请人： Gi Heon KIM ,  Sung Min YOON ,  Kyu Ha BAEK ,  In Kyu YOU ,  Seung Youl KANG ,  Seong Deok AHN ,  Kyung Soo SUH

发明人： Gi Heon KIM ,  Sung Min YOON ,  Kyu Ha BAEK ,  In Kyu YOU ,  Seung Youl KANG ,  Seong Deok AHN ,  Kyung Soo SUH

IPC分类号： C08F120/06 ,  B05D5/12 ,  C08F120/44 ,  C08K3/22 ,  C08K3/36

CPC分类号： H01L21/02118 ,  C08F120/00 ,  C08F120/10 ,  C08F120/44 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/31691 ,  H01L51/0537

摘要： Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.

摘要翻译： 提供一种绝缘层，其中无机材料被添加到有机聚合物中以提高绝缘性能，使用该绝缘层的有机薄膜晶体管以及制造该有机薄膜晶体管的方法。 提供了包含乙烯基聚合物和无机材料的有机薄膜晶体管的绝缘层。 这里，乙烯基聚合物与无机材料的重量比可以在1：0.0001〜1:0.5的范围内。 因此，可以在低温下制造薄膜，并且还可以制造绝缘层，该绝缘层具有高介电常数，不影响在形成绝缘层期间的以前工艺中形成的其它层。

公开(公告)号：US20080006877A1

公开(公告)日：2008-01-10

申请号：US11855425

申请日：2007-09-14

申请人： Peter Mardilovich ,  Randy Hoffman ,  Gregory Herman

发明人： Peter Mardilovich ,  Randy Hoffman ,  Gregory Herman

IPC分类号： H01L29/78 ,  B05C1/00 ,  H01L23/58

CPC分类号： H01L21/022 ,  B33Y10/00 ,  B33Y70/00 ,  H01L21/02118 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3143 ,  H01L21/316 ,  H01L21/3185 ,  H01L21/4757 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0035 ,  H01L51/0537

摘要： Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

摘要翻译： 描述了用于形成解决方案处理设备的方法，设备，设备和/或系统的实施例。

公开(公告)号：US20070145453A1

公开(公告)日：2007-06-28

申请号：US11318044

申请日：2005-12-23

申请人： Yiliang Wu ,  Beng Ong

发明人： Yiliang Wu ,  Beng Ong

IPC分类号： H01L29/94

CPC分类号： H01L29/51 ,  B82Y10/00 ,  H01L21/02145 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31616 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/7869 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0537

摘要： A dielectric layer for electronic devices is disclosed herein. The dielectric layer comprises inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. The layer improves the carrier mobility and current on/off ratio of an electronic device incorporating it, especially a thin film transistor.

摘要翻译： 本文公开了一种用于电子器件的电介质层。 介电层包含分散在聚硅氧烷，聚倍半硅氧烷及其混合物中的聚合物中的无机纳米粒子。 该层改进了其结合的电子器件的载流子迁移率和电流开/关比，特别是薄膜晶体管。

公开(公告)号：US07098525B2

公开(公告)日：2006-08-29

申请号：US10434377

申请日：2003-05-08

申请人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

发明人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

IPC分类号： H01L23/58

CPC分类号： H01L21/02118 ,  H01G4/18 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H05K1/162 ,  Y10T428/31692

摘要： Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0–3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.

摘要翻译： 用于电子器件的有机聚合物，其中所述聚合物包括下式的重复单元：其中：每个R 1独立地为H，芳基，Cl，Br，I或包括 可交联基团; 每个R 2独立地为H，芳基或R 4; 每个R 3独立地为H或甲基; 每个R 5独立地是烷基，卤素或R 4; 每个R 4独立地是包含至少一个CN基团并且具有每个CN基团约30至约200的分子量的有机基团; 并且n = 0-3; 条件是聚合物中至少一个重复单元包括R 4。 这些聚合物可用于诸如有机薄膜晶体管的电子器件中。