公开(公告)号：US20130157397A1

公开(公告)日：2013-06-20

申请号：US13766189

申请日：2013-02-13

申请人： Hiroyoshi Shouji ,  Shunichi Sato ,  Toshihiro Ishii ,  Kengo Makita ,  Masahiro Hayashi ,  Toshihide Sasaki ,  Akihiro Itoh

发明人： Hiroyoshi Shouji ,  Shunichi Sato ,  Toshihiro Ishii ,  Kengo Makita ,  Masahiro Hayashi ,  Toshihide Sasaki ,  Akihiro Itoh

IPC分类号： H01S5/183

CPC分类号： H01S5/18361 ,  H01S5/0202 ,  H01S5/18311 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/173 ,  H01S2301/176

摘要： A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

摘要翻译： 一种制造表面发射激光器件的制造方法包括以下步骤：在基板上层压下反射镜，包括有源层的谐振器结构和具有选择性氧化层的上反射层的层叠体; 蚀刻层叠体以形成在其侧表面露出的选择性氧化层的台面结构; 从台面结构的侧面选择性地氧化选择氧化层，形成电流通过区被氧化物包围的收缩结构; 在远离台面结构的位置处形成分隔槽; 钝化形成分离槽时暴露的层叠体的至少一部分的最外表面; 并用绝缘体涂覆钝化部分。

公开(公告)号：US20130142209A1

公开(公告)日：2013-06-06

申请号：US13688326

申请日：2012-11-29

申请人： NICHIA CORPORATION

发明人： Shingo TANISAKA ,  Hiroki KOIZUMI

IPC分类号： H01S5/10 ,  H01L33/00

CPC分类号： H01S5/10 ,  H01L33/005 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/18

摘要： A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements.

摘要翻译： 一种制造半导体激光元件的方法，包括：制备晶片; 在晶片的上表面和下表面中的至少一个上形成第一凹槽，每个第一凹槽与形成在晶片中的光波导间隔开，并且在平面图中沿与光波导相交的方向延伸; 在晶片的上表面和下表面中的一个上形成第二凹槽，每个第二凹槽沿与从每个第一凹槽延伸的直线交叉的方向延伸，并且每个第二凹槽具有平滑的表面 与第一个凹槽; 沿着第一凹槽划分晶片以获得多个激光棒; 并且在与第一凹槽的延伸方向相交的方向上划分激光棒，以获得半导体激光元件。

公开(公告)号：US20130099246A1

公开(公告)日：2013-04-25

申请号：US13639907

申请日：2011-03-15

申请人： Piotr Perlin ,  Marcin Sarzynski ,  Tadeusz Suski ,  Robert Czernecki ,  Michal Leszczynski

发明人： Piotr Perlin ,  Marcin Sarzynski ,  Tadeusz Suski ,  Robert Czernecki ,  Michal Leszczynski

IPC分类号： C30B29/40 ,  H01L33/00 ,  H01L29/20

CPC分类号： C30B29/406 ,  B82Y20/00 ,  C30B25/18 ,  C30B33/00 ,  C30B33/12 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/04 ,  Y10T428/249924

摘要： A surface of the substrate consists in plurality of neighbouring stripe shaped flat surfaces of a width from 1 to 2000 μm. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). Disorientation angle of each of the flat surfaces is between 0 and 3 degree and is different for each pair of neighbouring flat surfaces. Substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by MOCVD or MBE method which permits for realization of a non-absorbing mirrors laser diode emitting a light of the wavelength from 380 to 550 nm and a laser diodes array which may emit simultaneously light of various wavelengths in the range of 380 to 550 nm.

摘要翻译： 基板的表面由宽度为1〜2000μm的多个相邻条状平面构成。 平坦表面的较长边缘彼此平行，并且这些表面的平面相对于由米勒 - 布拉维斯指数（0001），（11-22）或（11-20）限定的氮化镓晶体的结晶平面偏心。 每个平坦表面的定向角在0和3度之间，并且对于每对相邻的平坦表面是不同的。 根据本发明的衬底允许通过MOCVD或MBE方法对层状AlInGaN结构进行外延生长，其允许实现发射380至550nm的波长的光的非吸收反射镜激光二极管和可同时发射的激光二极管阵列 在380至550nm范围内的各种波长的光。

公开(公告)号：US08420419B2

公开(公告)日：2013-04-16

申请号：US13404310

申请日：2012-02-24

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。

公开(公告)号：US20130065336A1

公开(公告)日：2013-03-14

申请号：US13567268

申请日：2012-08-06

申请人： Shimpei TAKAGI

发明人： Shimpei TAKAGI

IPC分类号： H01L21/78

CPC分类号： H01S5/0202 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333

摘要： A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g is forced down through a first region ER1 to keep the first region ER1 squeezed between a support member H2 and a movable member H1 together with a part of a protective sheet TF in contact with the first region ER1 while the tension generated in the area of the protective sheet TF in contact with the first region ER1 with the movable member H1 increases until the semi-polar principal surface SF at an end face EG1 of the first region ER1 tilts by a deflection angle THETA from the semi-polar principal surface SF of a second region ER2, and a force is thereby generated in the first region ER1 in a direction opposite to the direction of travel of the blade 5g toward the first region ER1. For example, an angle ALPHA is within the range of 71 degrees to 79 degrees, and the deflection angle THETA is within the range of 11 to 19.

摘要翻译： 用于制造III族氮化物半导体激光器件的方法通过使用半极性平面稳定地提供具有低激光阈值电流的激光腔镜。 刀片5g被迫向下穿过第一区域ER1，以使第一区域ER1与支撑构件H2和可移动构件H1之间挤压在一起，同时保持片材TF的一部分与第一区域ER1接触，同时在 与第一区域ER1与可移动部件H1接触的保护片TF的面积增加，直到第一区域ER1的端面EG1的半极性主表面SF从半极性主面倾斜偏转角度THETA SF的第二区域ER2，并且在第一区域ER1中产生与第一区域ER1的叶片5g的行进方向相反的方向的力。 例如，角度ALPHA在71度〜79度的范围内，偏转角度THETA在11〜19度的范围内。

公开(公告)号：US20130064261A1

公开(公告)日：2013-03-14

申请号：US13606894

申请日：2012-09-07

申请人： Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

发明人： Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

IPC分类号： H01L21/02 ,  H01S5/34 ,  H01L29/04 ,  H01L29/201 ,  H01L29/161 ,  H01L29/22

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/2201 ,  H01S5/34333

摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{1 1-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。

公开(公告)号：US20130037825A1

公开(公告)日：2013-02-14

申请号：US13639608

申请日：2011-02-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe

IPC分类号： H01L33/16 ,  H01L33/08

CPC分类号： H01S5/0202 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/3202

摘要： Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions (23, 24) in the side surfaces (25, 26), the modified regions being formed by laser radiation; and a light emitting element (12), which is provided on the substrate front surface (10a) of the substrate (10). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.

摘要翻译： 公开了一种半导体发光芯片（20），其包括：具有作为前表面的蓝宝石单晶的C面的基板（10）和由相交的平面构成的侧面（25,26） 所有相当于蓝宝石单晶的M平面的平面，其包括在侧表面（25,26）中的改质区域（23,24），所述改质区域由激光辐射形成; 以及设置在基板（10）的基板前表面（10a）上的发光元件（12）。 在半导体发光芯片中，抑制了基板侧面相对于基板正面的倾斜。 还公开了一种处理衬底的方法。

公开(公告)号：US08355418B2

公开(公告)日：2013-01-15

申请号：US12883093

申请日：2010-09-15

申请人： James W. Raring ,  Nick Pfister ,  Mathew Schmidt ,  Christiane Poblenz

发明人： James W. Raring ,  Nick Pfister ,  Mathew Schmidt ,  Christiane Poblenz

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/227 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3407 ,  H01S5/4025

摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

摘要翻译： 一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。

公开(公告)号：US20120202304A1

公开(公告)日：2012-08-09

申请号：US13416844

申请日：2012-03-09

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

IPC分类号： H01L33/02

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US20120135554A1

公开(公告)日：2012-05-31

申请号：US13367846

申请日：2012-02-07

申请人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

发明人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

IPC分类号： H01L21/18

CPC分类号： H01S5/3202 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/22 ,  H01S2301/14

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.