公开(公告)号：US20160099375A1

公开(公告)日：2016-04-07

申请号：US14505534

申请日：2014-10-03

申请人： TSMC Solar Ltd.

发明人： Jyh-Lih WU

IPC分类号： H01L31/18 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0224

CPC分类号： H01L31/1864 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A method includes: forming a buffer layer over an absorber layer of a photovoltaic device; and extrinsically doping the buffer layer after the forming step.

摘要翻译： 一种方法包括：在光伏器件的吸收层上形成缓冲层; 并在形成步骤之后对该缓冲层进行外掺。

公开(公告)号：US09209331B2

公开(公告)日：2015-12-08

申请号：US14336783

申请日：2014-07-21

申请人： InVisage Technologies, Inc.

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L31/0352 ,  H01L31/032 ,  H01L31/109 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/0384 ,  H01L31/09 ,  H01L27/146

CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US09209218B2

公开(公告)日：2015-12-08

申请号：US14487196

申请日：2014-09-16

申请人： Mitsubishi Electric Corporation

发明人： Takahiro Onakado

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/0352

CPC分类号： H01L27/14649 ,  H01L27/14629 ,  H01L31/0304 ,  H01L31/035236

摘要： An infrared solid-state imaging device with unit detecting sections in a matrix form, wherein the unit detecting section includes: an infrared light guiding layer; a first reflecting layer on the infrared light guiding layer; an infrared light detecting section on the first reflecting layer, the infrared light detecting section including an infrared light absorbing layer and upper and lower contact layers; and first metal wiring connected to the upper contact layer, wherein a side wall of the unit detecting section is inclined at an angle smaller than 45° to a normal direction, to form a groove between the adjacent unit detecting sections, a first insulating layer is provided on the side wall of the unit detecting section and second metal wiring is provided on the first insulating layer, and a refractive index of the first reflecting layer is lower than that of the lower contact layer.

摘要翻译： 一种具有矩阵形式的单元检测部分的红外固体成像装置，其中所述单元检测部分包括：红外光引导层; 红外光导层上的第一反射层; 所述第一反射层上的红外光检测部，所述红外光检测部具有红外光吸收层和上下接触层; 以及与所述上接触层连接的第一金属配线，其中，所述单元检测部的侧壁相对于法线方向倾斜成小于45°的角度，在相邻的单元检测部之间形成槽，第一绝缘层为 设置在单元检测部分的侧壁上，第二金属布线设置在第一绝缘层上，并且第一反射层的折射率低于下接触层的折射率。

公开(公告)号：US09196726B2

公开(公告)日：2015-11-24

申请号：US14275858

申请日：2014-05-12

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Cun Ke ,  Chih-Wei Yang ,  Chia-Fu Hsu

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L21/265 ,  H01L21/02

CPC分类号： H01L29/66575 ,  H01L21/02532 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28088 ,  H01L21/31155 ,  H01L29/4925 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在基板上形成栅极结构; 在衬底中形成轻掺杂漏极; 以及执行用于以平铺方式将氟离子注入所述衬底和所述栅极结构的一部分的第一注入工艺。

公开(公告)号：US09166032B1

公开(公告)日：2015-10-20

申请号：US14483725

申请日：2014-09-11

申请人： Kabushiki Kaisha Toshiba

发明人： Masaaki Higuchi ,  Katsuyuki Sekine ,  Fumiki Aiso ,  Takuo Ohashi ,  Tatsuya Okamoto

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/778 ,  H01L21/02

CPC分类号： H01L27/11556 ,  H01L21/0262 ,  H01L21/02636 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7785

摘要： According to one embodiment, a non-volatile memory device includes a plurality of electrodes, at least one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film contacts the conductive layers, and extends in the first direction along the semiconductor layer between the conductive layers and the semiconductor layer. The second insulating film is provided between the first insulating film and the semiconductor layer. The first insulating film includes a first portion located between the conductive layers and the second insulating film, and a second portion located between the interlayer insulating film and the second insulating film.

摘要翻译： 根据一个实施例，非易失性存储器件包括多个电极，至少一个半导体层，导电层以及第一和第二绝缘膜。 电极沿第一方向并排配置。 半导体层沿第一方向延伸到电极中。 导电层设置在每个电极和半导体层之间，并且在第一方向上彼此分离。 第一绝缘膜与导电层接触，沿导电层和半导体层之间的半导体层在第一方向上延伸。 第二绝缘膜设置在第一绝缘膜和半导体层之间。 第一绝缘膜包括位于导电层和第二绝缘膜之间的第一部分和位于层间绝缘膜和第二绝缘膜之间的第二部分。

公开(公告)号：US09153726B1

公开(公告)日：2015-10-06

申请号：US14249967

申请日：2014-04-10

申请人： Texas Instruments Incorporated

发明人： Ann Gabrys ,  Peter Hopper ,  William French

IPC分类号： H01L31/02 ,  H01L31/0336 ,  H01L31/109 ,  H01L31/18

CPC分类号： H01L31/09 ,  G02B6/42

摘要： A photodetector detects the absence or presence of light by detecting a change in the inductance of a coil. The magnetic field generated when a current flows through the coil passes through an electron-hole generation region. Charged particles in the electron-hole generation region come under the influence of the magnetic field, and generate eddy currents whose magnitudes depend on whether light is absent or present. The eddy currents generate a magnetic field that opposes the magnetic field generated by current flowing through the coil.

摘要翻译： 光电检测器通过检测线圈的电感的变化来检测光的存在或不存在。 当电流流过线圈时产生的磁场通过电子空穴产生区域。 电子空穴产生区域中的带电粒子受到磁场的影响，并产生大小取决于光不存在或存在的涡流。 涡流产生与由流过线圈的电流产生的磁场相反的磁场。

公开(公告)号：US09112027B2

公开(公告)日：2015-08-18

申请号：US14468519

申请日：2014-08-26

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Yosuke Shimamune ,  Akira Katakami ,  Akiyoshi Hatada ,  Masashi Shima ,  Naoyoshi Tamura

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L29/04 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28518 ,  H01L21/30608 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/4975 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7833 ,  Y10S257/90

摘要： A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

摘要翻译： 一种半导体器件包括：栅极电极，形成在硅衬底上，栅极绝缘膜对应于沟道区，形成在硅衬底中的p型扩散区的源极和漏极区域的侧壁绝缘膜的相应外侧 栅电极和在硅衬底中在与硅衬底呈外延角的侧壁绝缘膜的各外侧形成的一对SiGe混合晶体区域，SiGe混晶区域由彼此相对的侧壁表面限定，其中 在每个SiGe混合晶体区域中，侧壁表面由相对于硅衬底的主表面形成相应不同角度的多个面限定。

公开(公告)号：US09093516B2

公开(公告)日：2015-07-28

申请号：US14089613

申请日：2013-11-25

申请人： IMEC

发明人： Mohammad Ali Pourghaderi ,  Bart Soree

IPC分类号： H01L31/0336 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/205

CPC分类号： H01L29/78 ,  H01L29/068 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66977 ,  H01L29/7781

摘要： A heterostructure field effect transistor is provided comprising a semiconductor wire comprising in its longitudinal direction a source and a drain region, a channel region in between the source and drain region and in its transversal direction for the source region, a source core region and a source shell region disposed around the source core region, the source shell region having in its transversal direction for the drain region, a drain core region and a drain shell region disposed around the drain core region, the drain shell region having in its transversal direction for the channel region, a channel core region and a channel shell region disposed around the channel core region; wherein the thickness of the channel shell region is smaller than the thickness of the source shell region and is smaller than the thickness of the drain shell region.

摘要翻译： 提供了一种异质结构场效应晶体管，其包括在其纵向方向上包括源极和漏极区域的源极和漏极区域之间的沟道区域以及用于源极区域的横向方向的源极区域和源极 壳体区域，其设置在源极区域周围，源极壳区域在其横向方向上为漏极区域，漏极区域和漏极壳体区域设置在漏极区域周围，漏极壳体区域在其横向方向上为 沟道区域，沟道芯区域和设置在沟道芯区域周围的沟道壳体区域; 其中所述通道壳体区域的厚度小于所述源极壳体区域的厚度并且小于所述漏极壳体区域的厚度。

公开(公告)号：US09087901B2

公开(公告)日：2015-07-21

申请号：US14571561

申请日：2014-12-16

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

发明人： Lele Chen

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/78 ,  H01L27/088 ,  H01L29/08

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823425 ,  H01L27/088 ,  H01L29/06 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7816

摘要： A semiconductor device is disclosed. The device includes a plurality of gates formed on a surface of a substrate, a plurality of sidewalls formed on side surfaces of the gates, a Sigma-shaped recess formed in the substrate between adjacent gates, a SiGe seed layer formed on an inner surface of the Sigma-shaped recess, boron-doped bulk SiGe formed on a surface of the SiGe seed layer, with the boron-doped bulk SiGe filling the Sigma-shaped recess, and a boron-doped SiGe regeneration layer formed in a first recess beneath the surface of the substrate. The first recess is formed by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.

摘要翻译： 公开了一种半导体器件。 该器件包括形成在衬底的表面上的多个栅极，形成在栅极的侧表面上的多个侧壁，形成在相邻栅极之间的衬底中的Sigma形凹部，形成在栅极的内表面上的SiGe晶种层 形成在SiGe种子层的表面上的Sigma形凹槽，掺硼体积SiGe以及填充Sigma形凹槽的硼掺杂体SiGe，以及形成在第一凹槽内的掺硼SiGe再生层 基板的表面。 通过蚀刻SiGe种子层中的一部分和Sigma形凹部中的掺硼体SiGe来形成第一凹槽，并且硼掺杂的SiGe再生层具有比SiGe种子层或硼更高的硼浓度 掺杂体积SiGe。

公开(公告)号：US09070795B2

公开(公告)日：2015-06-30

申请号：US13935062

申请日：2013-07-03

申请人： International Business Machines Corporation

发明人： Tze-Chiang Chen ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L29/22 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L33/18 ,  H01L21/02

CPC分类号： H01L33/0079 ,  H01L21/02546 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/18 ,  H01L33/305 ,  H01L33/62 ,  H01L2924/10329

摘要： A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer.

摘要翻译： 一种用于形成发光器件的方法包括在单晶衬底上形成单晶III-V发光层，并在发光层上形成第一掺杂层。 第一接触沉积在第一掺杂层上。 通过机械过程从发射层去除单晶衬底。 在发射层上形成第二掺杂层，该衬底已被去除。 第二掺杂层具有与第一掺杂层相反的掺杂剂导电性。 第二接触沉积在第二掺杂层上。