公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130244372A1

公开(公告)日：2013-09-19

申请号：US13607855

申请日：2012-09-10

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/068 ,  H01L31/074 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

摘要翻译： 一种形成光电器件的方法，包括提供具有第一导电类型的第一晶体半导体材料的吸收层，以及外延生长与第一导电类型相反的第二导电类型的第二晶体半导体层。 第一导电类型可以是p型，第二导电类型可以是n型，或者第一导电类型可以是n型，第二导电类型可以是p型。 外延生长第二晶体半导体层的温度不超过500℃。触点形成为与吸收层和第二晶体半导体层电连通。

公开(公告)号：US20130242627A1

公开(公告)日：2013-09-19

申请号：US13418921

申请日：2012-03-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H02M7/06 ,  G06F17/50

CPC分类号： H02M7/106 ,  H01L21/304 ,  H01L21/6835 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/872 ,  H01L2221/6835 ,  H01L2221/68368 ,  Y02B70/1483

摘要： High voltage diode-connected gallium nitride high electron mobility transistor structures or Schottky diodes are employed in a network including high-k dielectric capacitors in a solid state, monolithic voltage multiplier. A superjunction formed by vertical p/n junctions in gallium nitride facilitates operation of the high electron mobility transistor structures and Schottky diodes. A design structure for designing, testing or manufacturing an integrated circuit is tangibly embodied in a machine-readable medium and includes elements of a solid state voltage multiplier.

摘要翻译： 高压二极管连接的氮化镓高电子迁移率晶体管结构或肖特基二极管用于包括固态高分子电压倍增器的高k介质电容器的网络中。 由氮化镓中的垂直p / n结形成的超结，有利于高电子迁移率晶体管结构和肖特基二极管的工作。 用于设计，测试或制造集成电路的设计结构被有形地体现在机器可读介质中并且包括固态电压倍增器的元件。

公开(公告)号：US20130112275A1

公开(公告)日：2013-05-09

申请号：US13290404

申请日：2011-11-07

申请人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544

摘要： A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

公开(公告)号：US20130095598A1

公开(公告)日：2013-04-18

申请号：US13602122

申请日：2012-09-01

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/0693 ,  H01L31/1808 ,  Y02E10/544 ,  Y02P70/521

摘要： A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

公开(公告)号：US20130025659A1

公开(公告)日：2013-01-31

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

公开(公告)号：US20130019945A1

公开(公告)日：2013-01-24

申请号：US13605068

申请日：2012-09-06

申请人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/03762 ,  H01L31/02167 ,  H01L31/075 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

公开(公告)号：US20130000708A1

公开(公告)日：2013-01-03

申请号：US13614953

申请日：2012-09-13

申请人： Stephen W. Bedell ,  Norma Sosa Cortes ,  Keith E. Fogel ,  Devendra Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Norma Sosa Cortes ,  Keith E. Fogel ,  Devendra Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/06

CPC分类号： H01L31/068 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/075 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/547 ,  Y02E10/548

摘要： A multijunction photovoltaic (PV) cell includes a bottom flexible substrate and a bottom metal layer located on the bottom flexible substrate. The multijunction photovoltaic cell also includes a semiconductor layer located on the bottom metal layer and a stack having a plurality of junctions located on the semiconductor layer, each of the plurality of junctions having a respective bandgap. The pluralities of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack.

摘要翻译： 多结光伏（PV）电池包括底部柔性基底和位于底部柔性基底上的底部金属层。 所述多结光伏电池还包括位于所述底部金属层上的半导体层和具有位于所述半导体层上的多个结的叠层，所述多个结中的每一个具有相应的带隙。 多个接合点从具有位于衬底上的最小带隙的接合点排列到具有位于堆叠顶部的最大带隙的接合点。

公开(公告)号：US20120329206A1

公开(公告)日：2012-12-27

申请号：US13603932

申请日：2012-09-05

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In one embodiment, a method of forming a photovoltaic device is provided which includes providing an absorption layer comprising a silicon-containing semiconductor layer of a first conductivity type and having a top surface and a bottom surface that opposes the top surface. A front contact is formed on the top surface of the absorption layer, and a back contact is formed on the bottom surface of the absorption layer. The forming of the front contact and the back contact can occur in any order. The back contact that is formed comprises at least one back contact semiconductor material layer of the first conductivity type and having a lower band-offset than that of hydrogenated amorphous silicon with crystalline Si and/or a higher activated doping of the first conductivity type than that of the doped hydrogenated amorphous silicon layer.

摘要翻译： 在一个实施例中，提供了一种形成光伏器件的方法，其包括提供包括第一导电类型的含硅半导体层并且具有与顶表面相对的顶表面和底表面的吸收层。 在吸收层的顶表面上形成前接触，并且在吸收层的底表面上形成背接触。 前接触和后接触的形成可以以任何顺序发生。 形成的背接触包括至少一个第一导电类型的背接触半导体材料层，并且具有比具有结晶Si的氢化非晶硅和/或第一导电类型的更高活性掺杂的带隙偏移低的带隙偏移 的掺杂氢化非晶硅层。