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    Processing for polishing dissimilar conductive layers in a semiconductor device
    54.
    发明授权
    Processing for polishing dissimilar conductive layers in a semiconductor device 失效
    用于在半导体器件中抛光不同导电层的处理

    公开(公告)号：US06204169B1

    公开(公告)日：2001-03-20

    申请号：US08822025

    申请日：1997-03-24

    Applicant: Rajeev Bajaj ,  Janos Farkas ,  Sung C. Kim ,  Jaime Saravia

    Inventor： Rajeev Bajaj ,  Janos Farkas ,  Sung C. Kim ,  Jaime Saravia

    IPC: H01L214763

    CPC classification number: H01L21/3212

    Abstract: A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different urce containers (111 and 112), wherein the first slurry is dispensed until e tungsten is removed and then the slurry dispense is switched to second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.

    Abstract translation: 抛光沉积在半导体器件衬底上的两种不同导电材料的工艺可以独立地优化每个导电材料的抛光，同时利用相同的抛光设备来制造效率。 使用一个抛光机（10），但是使用两种不同的浆料配方来抛光半导体器件基板（250）的钨层（258）和钛层（256）。 两个浆料可以从两个不同的容器（111和112）顺序地分配到相同的抛光平台（132）上，其中分配第一浆料直到除去钨，然后将浆料分配切换到第二浆料以除去 钛。 在优选的实施方案中，第一浆料组合物是硝酸铁浆料，而第二浆料组合物是草酸浆料。

    Wafer polishing device with movable window
    55.
    发明授权
    Wafer polishing device with movable window 失效
    带移动窗的晶圆抛光装置

    公开(公告)号：US6068539A

    公开(公告)日：2000-05-30

    申请号：US38171

    申请日：1998-03-10

    Applicant: Rajeev Bajaj ,  Herbert E. Litvak ,  Rahul K. Surana ,  Stephen C. Jew ,  Jiri Pecen

    Inventor： Rajeev Bajaj ,  Herbert E. Litvak ,  Rahul K. Surana ,  Stephen C. Jew ,  Jiri Pecen

    IPC: B24B21/04 ,  B24B21/18 ,  B24B37/04 ,  B24B49/12 ,  B24D7/12 ,  B24B7/22

    CPC classification number: B24D7/12 ,  B24B21/04 ,  B24B37/04 ,  B24B49/12

    Abstract: A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing process. When the window moves into position between the wafer and a measurement sensor, the window is moved closer to the polishing surface. In this position, at least some polishing agent collected in the recess above the window is removed, and an in-situ measurement can be taken with reduced interference from the polishing agent. After the window is positioned away from the wafer and measurement sensor, the window moves farther away from the wafer and polishing surface. With such a movable window, the limitations of current polishing devices are overcome.

    Abstract translation: 具有可移动窗口的晶片抛光装置可用于在CMP处理期间的晶片的原位监测。 在大多数CMP操作期间，窗口保持在抛光装置的抛光表面下方，以保护窗口免受抛光过程的有害影响。 当窗口移动到晶片和测量传感器之间的位置时，窗口移动到靠近抛光表面。 在这个位置上，除去收集在窗口上方的凹部中的至少一些抛光剂，并且可以减少来自抛光剂的干扰而进行原位测量。 窗户远离晶片和测量传感器放置后，窗户将远离晶片和抛光表面。 利用这种可移动窗口，克服了当前抛光装置的局限性。

    Process for polishing a semiconductor device substrate
    56.
    发明授权
    Process for polishing a semiconductor device substrate 失效
    抛光半导体器件基板的工艺

    公开(公告)号：US5916011A

    公开(公告)日：1999-06-29

    申请号：US780113

    申请日：1996-12-26

    Applicant: Sung C. Kim ,  Rajeev Bajaj ,  Mark A. Zaleski

    Inventor： Sung C. Kim ,  Rajeev Bajaj ,  Mark A. Zaleski

    IPC: H01L21/304 ,  B24B37/24 ,  B24D13/12 ,  B24D13/14 ,  B24B7/24

    CPC classification number: B24B37/24

    Abstract: A polishing pad (34) with a poromeric structure polishes two dissimilar materials (56, 58). By using a relatively softer pad. and conditioning, relatively constant times can be used for polishing the dissimilar materials (56, 58). This makes polishing more predictable and increases the number of substrates that can be polished using a single polishing pad (34). Polishing pads (34) are typically changed when other maintenance is performed on the polisher rather than when the polishing rate becomes too low.

    Abstract translation: 具有孔体结构的抛光垫（34）抛光两种不同材料（56,58）。 通过使用相对较软的垫。 并且调节，相对恒定的时间可用于抛光不同材料（56,58）。 这使得抛光更可预测，并且增加可以使用单个抛光垫（34）抛光的基板的数量。 抛光垫（34）通常在对抛光机进行其它维护时而不是当抛光速率变得太低时被改变。

    Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
    57.
    发明授权
    Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture 失效
    用于铜的化学机械抛光（CMP）浆料和集成电路制造中的使用方法

    公开(公告)号：US5897375A

    公开(公告)日：1999-04-27

    申请号：US954190

    申请日：1997-10-20

    Applicant: David Watts ,  Rajeev Bajaj ,  Sanjit Das ,  Janos Farkas ,  Chelsea Dang ,  Melissa Freeman ,  Jaime A. Saravia ,  Jason Gomez ,  Lance B. Cook

    Inventor： David Watts ,  Rajeev Bajaj ,  Sanjit Das ,  Janos Farkas ,  Chelsea Dang ,  Melissa Freeman ,  Jaime A. Saravia ,  Jason Gomez ,  Lance B. Cook

    IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

    CPC classification number: C23F3/00 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

    Abstract: A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.

    Abstract translation: 通过形成铜层（22）开始化学机械抛光（CMP）铜层（22）的方法。 然后将铜层（22）暴露于浆料（24）。 浆料（24）含有氧化剂如H 2 O 2，羧酸盐如柠檬酸铵，研磨浆如校准研磨剂，任选的三唑或三唑衍生物，剩余的溶剂如去离子水。 浆料（24）的使用以高的去除速度抛光铜层（22），从而降低了铜层（22）的点蚀和腐蚀，并实现了良好的铜互连平面性。 这种浆料（24）具有铜对氧化物的良好选择性，并且导致具有良好电性能的铜器件。 此外，浆料（24）的处理不是环境困难的，因为与其它现有技术的浆料相比，浆料（24）是无害环境的。

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