Abstract:
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
Abstract:
A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.
Abstract:
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
Abstract:
A semiconductor die package is disclosed. It may include a semiconductor die having a first surface and a second surface, and a leadframe structure. A molding material may be formed around at least a portion of the die and at least a portion of the leadframe structure. A solderable layer may be on the exterior surface of the molding material and the first surface of the semiconductor die.
Abstract:
A semiconductor die package is disclosed. In one embodiment, the semiconductor die package has a substrate. It includes (i) a lead frame structure including a die attach region with a die attach surface and a lead having a lead surface, and (ii) a molding material. The die attach surface and the lead surface are exposed through the molding material. A semiconductor die is on the die attach region, and the semiconductor die is electrically coupled to the lead.
Abstract:
A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.
Abstract:
A semiconductor die package is disclosed. In one embodiment, the semiconductor die package has a substrate. It includes (i) a lead frame structure including a die attach region with a die attach surface and a lead having a lead surface, and (ii) a molding material. The die attach surface and the lead surface are exposed through the molding material. A semiconductor die is on the die attach region, and the semiconductor die is electrically coupled to the lead.
Abstract:
A chip device that includes a leadframe, a die and a mold compound. The backside of the die is metallized and exposed through a window defined within a mold compound that encapsulates the die when it is coupled to the leadframe. Leads on the leadframe are coupled to source and gate terminals on the die while the metallized backside of the die serves as the drain terminals.
Abstract:
An optocoupler package is disclosed. The optocoupler package includes a substrate comprising a leadframe and a molding compound, and a plurality of optocouplers, each optocoupler including (i) an optical emitter, (ii) an optical receiver, (iii) and an optically transmissive medium disposed between the optical emitter and optical receiver, where the optical emitter and the optical receiver are electrically coupled to the leadframe.
Abstract:
A multichip module package uses bond wire with plastic resin on one side of a lead frame to package an integrated circuit and flip chip techniques to attach one or more mosfets to the other side of the lead frame. The assembled multichip module 30 has an integrated circuit controller 14 on a central die pad. Wire bonds 16 extend from contact areas on the integrated circuit to outer leads 2.6 of the lead frame 10. On the opposite, lower side of the central die pad, the sources and gates of the mosfets 24, 26 are bump or stud attached to the half etched regions of the lead frame. The drains 36 of the mosfets and the ball contacts 22.1 on the outer leads are soldered to a printed circuit board.