公开(公告)号：US5374627A

公开(公告)日：1994-12-20

申请号：US006145

申请日：1993-01-19

申请人： Kazuhiro Ito ,  Etsuzo Entani ,  Yoshiya Kawamura

发明人： Kazuhiro Ito ,  Etsuzo Entani ,  Yoshiya Kawamura

IPC分类号： A01N63/00 ,  A01N37/02 ,  A01N43/16 ,  A01N65/00 ,  A01N43/04 ,  A01N25/00

CPC分类号： A01N43/16 ,  A01N63/00 ,  A01N65/20

摘要： A variety of plant diseases and damage by certain pests in agricultural and horticultural plants can be efficiently controlled without substantial chemical injuries by applying a plant-protecting composition which comprises (a) 1 part by weight of a chitosan hydrolyzate having an average molecular weight of 10,000 to 50,000, obtained by acid hydrolysis or enzymatic hydrolysis of chitosan and (b) 0.25 to 4 parts by weight of acetic acid. Any possible chemical injury to plants caused by applying the composition can be further reduced when the composition is admixed with a deproteinized juice of alfalfa leaves.

摘要翻译： 通过施用植物保护组合物可以有效地控制农业和园艺植物中的某些害虫的各种植物病害和损害，而不会造成实质的化学损伤，所述植物保护组合物包含（a）1重量份的平均分子量为10,000的壳聚糖水解产物 至50,000，通过壳聚糖的酸水解或酶水解获得，和（b）0.25至4重量份的乙酸。 当将组合物与脱蛋白的苜蓿叶汁混合时，通过施用组合物引起的对植物的任何可能的化学损伤可以进一步降低。

公开(公告)号：US4816890A

公开(公告)日：1989-03-28

申请号：US915410

申请日：1986-10-06

申请人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

发明人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

IPC分类号： H01L31/107 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/1075

摘要： An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.

摘要翻译： 一种雪崩光电二极管，包括基板，具有相对较大带隙的第一导电类型的第一半导体区域，具有相对较大带隙的第二导电类型的第二半导体区域，以及具有第一导电类型的第三半导体区域， 公开了一种小于第一和第二半导体区域的带隙的带隙，其中为了抑制暗电流的增加并使雪崩光电二极管在低电压下工作，等于导电性的第四半导体区域 在形成在第一半导体区域和第二半导体区域之间的pn结的中心部分下方的位置处，在第一半导体区域中形成并且具有比第一半导体区域更大的杂质浓度。 用这种结构形成的雪崩光电二极管具有低噪声和低工作电压特性。

公开(公告)号：US4032945A

公开(公告)日：1977-06-28

申请号：US710307

申请日：1976-07-30

申请人： Mitsuhiro Mori ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono

发明人： Mitsuhiro Mori ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono

IPC分类号： H01L21/28 ,  H01L33/10 ,  H01L33/30 ,  H01L33/36 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/642 ,  H01L33/647 ,  H01L33/58

摘要： A light emitting semiconductor diode comprises a first semiconductor region having a first conductivity type and a narrow forbidden band gap, a second semiconductor region, disposed on the first semiconductor region, having the first conductivity type and a low impurity concentration, a third semiconductor region, disposed on the second semiconductor region, having a second conductivity type which is opposite to the first conductivity type, and an ohmic contact disposed on the surface of the first semiconductor region, which is opposite to the second semiconductor region. The surface has a plurality of holes extending from the outer surface through the first semiconductor region toward a p-n junction between the second and third semiconductor regions, which holes are filled with a highly reflective metal having a high thermal conductivity.

公开(公告)号：US3981764A

公开(公告)日：1976-09-21

申请号：US590336

申请日：1975-06-25

申请人： Kazuhiro Ito ,  Masao Kawamura ,  Yuichi Ono ,  Makoto Morioka

发明人： Kazuhiro Ito ,  Masao Kawamura ,  Yuichi Ono ,  Makoto Morioka

IPC分类号： H05B33/14 ,  C30B19/06 ,  C30B19/08 ,  C30B19/10 ,  H01L33/22 ,  H01L33/30 ,  H05B33/12 ,  B01J17/20 ,  C01B19/00 ,  C01B27/00 ,  C01F7/00

CPC分类号： C30B19/10 ,  C30B19/063

摘要： In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.

摘要翻译： 在III-V族化合物半导体晶体的液相外延生长方法中，首先将晶体生长用溶液加热至比晶体生长温度高的温度，然后冷却至该温度，由此将一部分溶液 以小晶体结晶。 该溶液通过过滤器分离成两部分，其中一个包含小晶体，另一部分不含。 使衬底晶体与后者接触。

公开(公告)号：US09139769B2

公开(公告)日：2015-09-22

申请号：US13508949

申请日：2010-11-04

申请人： Hideyuki Emoto ,  Kazuhiro Ito

发明人： Hideyuki Emoto ,  Kazuhiro Ito

IPC分类号： C09K11/77 ,  C09K11/08 ,  H05B33/14 ,  H01L33/50

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/50 ,  H05B33/14

摘要： β-Sialon comprising Eu2+ that is present in a solid solution form in β-sialon represented by Si6-zAlzOzN μm [wherein z is 0.3-1.5], which shows, when excited with light of 450 nm in wavelength, a peak wavelength of fluorescent spectrum of 545-560 nm, a half-value breadth of 55 nm or greater, and an external quantum efficiency of 45% or greater. The β-sialon can be produced by blending at least one kind of oxide selected from aluminum oxide and silicon oxide with silicon nitride and aluminum nitride in such a manner as to give z of 0.3-1.5, further adding thereto a europium compound and a β-sialon powder having an average particle diameter of 5 μm or greater and an average degree of circularity of 0.7 or greater, each in a definite amount, and baking the mixture.

摘要翻译： ＆bgr; -SiONON，其以Si6-zAlzOzNi [其中z为0.3-1.5]表示的固体溶液形式存在，其表示当用波长为450nm的光激发时，峰值波长 的荧光光谱为545-560nm，半值宽度为55nm以上，外部量子效率为45％以上。 可以通过将选自氧化铝和氧化硅中的至少一种氧化物与氮化硅和氮化铝以使得z为0.3-1.5的方式共混来制备，并进一步加入铕化合物和 平均粒径为5μm以上，平均圆形度为0.7以上的硅铝氧氮粉末，一定量，并烘烤该混合物。

公开(公告)号：US08377413B2

公开(公告)日：2013-02-19

申请号：US13192568

申请日：2011-07-28

申请人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

发明人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

IPC分类号： C01F7/00

CPC分类号： C01F7/164 ,  C01P2006/40

摘要： To provide a method for preparing a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3 without need for expensive facilities, control of complicated reaction conditions or a long period of reaction time. A method for preparing a mayenite-containing oxide, which comprises a firing step of heating a starting material having a molar ratio of CaO:Al2O3 being from 9:10 to 14:5 based on the oxides at a temperature of from 900 to 1,300° C. to obtain a fired powder and a hydrogenation step of firing the fired powder at a temperature of at least 1,210° C. and lower than 1,350° C. in a hydrogen-containing gas having an oxygen partial pressure of at most 1,000 Pa to obtain a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3, and a method for preparing an electroconductive mayenite-containing oxide, which comprises irradiating the obtained mayenite-containing oxide with an ultraviolet ray etc. to obtain a mayenite-containing oxide containing an electroconductive mayenite type compound.

摘要翻译： 为了提供一种制备含有钙铝石型化合物并且氢化物离子密度为至少1×1018 / cm3而不需要昂贵的设备，控制复杂的反应条件或长时间的反应时间的钙铝氧化物的方法。 一种含有钙铝石的氧化物的制造方法，其特征在于，在900〜1300℃的温度下，对CaO：Al 2 O 3的摩尔比为9:10〜14:5的原料进行加热， 以获得烧制粉末和氢化步骤，在氧分压至多为1000Pa的含氢气体中，在至少1,210℃且低于1350℃的温度下焙烧烧制粉末至 得到含有钙铝石型化合物，含氢离子密度为1×1018 / cm3以上的含钙锰矿的氧化物，以及制造含导电性钙铝的氧化物的方法，其包括用紫外线照射所得到的含有钙铝的氧化物 以获得含有导电钙铝石型化合物的含有钙铝的氧化物。

公开(公告)号：US08234858B2

公开(公告)日：2012-08-07

申请号：US12694288

申请日：2010-01-27

申请人： Athanasios G. Konstandopoulos ,  Fumishige Miyata ,  Takafumi Kasuga ,  Kazuhiro Ito

发明人： Athanasios G. Konstandopoulos ,  Fumishige Miyata ,  Takafumi Kasuga ,  Kazuhiro Ito

IPC分类号： F01N3/00

CPC分类号： G01N15/0618 ,  F01N3/021 ,  F01N3/031 ,  F01N13/0093 ,  F01N2560/05 ,  F01N2560/07 ,  F01N2560/08

摘要： A particulate matter concentration measuring apparatus configured to measure a particulate matter concentration in exhaust gas includes an exhaust gas extraction line that is branched from an exhaust line and has a flow passage cross-sectional area smaller than that of the exhaust line, a particulate matter detection filter provided in the exhaust gas extraction line and configured to catch particulate matter, a heating unit configured to heat the caught particulate matter, and a differential pressure detection unit configured to detect a differential pressure generated between an inlet and an outlet of the particulate matter detection filter. The heating unit is configured to apply about 50% or more of a calorific value for heating the particulate matter to an area making up about 30% of the particulate matter detection filter on an upstream side of an exhaust gas flow.

摘要翻译： 排气中的颗粒物质浓度测定装置的颗粒物浓度测定装置包括从排气管分支并具有小于排气管路的流路截面积的废气抽出管线， 设置在废气抽出管线中并构造成捕获颗粒物质的过滤器，构造成加热被捕获的颗粒物质的加热单元;以及差压检测单元，其构造成检测在颗粒物质检测的入口和出口之间产生的压差 过滤。 加热单元被配置为将大约50％或更多的热值用于将颗粒物质加热到排气流的上游侧的颗粒物检测过滤器的约30％的区域。

公开(公告)号：US20120153806A1

公开(公告)日：2012-06-21

申请号：US13404870

申请日：2012-02-24

申请人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Yutaka Kuroiwa ,  Setsuro Ito

发明人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Yutaka Kuroiwa ,  Setsuro Ito

IPC分类号： H01J61/06 ,  H01J9/12 ,  H01B1/08 ,  H01J1/02

CPC分类号： H01J61/0677 ,  H01J9/022 ,  H01J61/78

摘要： An electrode for a discharge lamp is provided with a mayenite compound in at least a part of the electrode that emits secondary electrons, and a surface of a surface layer of the mayenite compound is plasma treated.

摘要翻译： 用于放电灯的电极在发出二次电子的电极的至少一部分中设置有钙铝石化合物，并且钙铝石化合物的表面层的表面被等离子体处理。

公开(公告)号：US07572652B2

公开(公告)日：2009-08-11

申请号：US11708683

申请日：2007-02-21

申请人： Yuhei Ikemoto ,  Koji Hirata ,  Kazuhiro Ito ,  Yu Uchida ,  Susumu Tsukimoto ,  Masanori Murakami

发明人： Yuhei Ikemoto ,  Koji Hirata ,  Kazuhiro Ito ,  Yu Uchida ,  Susumu Tsukimoto ,  Masanori Murakami

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007

摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.

摘要翻译： 一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。 发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。 发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

公开(公告)号：US20080174525A1

公开(公告)日：2008-07-24

申请号：US11987022

申请日：2007-11-26

申请人： Kazuhiro Ito ,  Yoo-Jin Song ,  Sun-Kuk Kim

发明人： Kazuhiro Ito ,  Yoo-Jin Song ,  Sun-Kuk Kim

IPC分类号： G09G3/28

CPC分类号： G09G3/296 ,  G09G3/293 ,  G09G2330/028

摘要： In plasma display device, a transistor includes a source terminal connected to a power supply that sequentially applies voltage pulses having a scan voltage to a plurality of scan electrode in a address period, and a drain terminal connected to a plurality of scan electrodes. A first resistor is connected between the source and the gate terminals of the transistor, and a second resistor is connected between the drain and the gate terminals of the transistor. A Zener diode is connected to the first resistor between the source and the gate terminals of the transistor. Therefore, a voltage finally applied to the plurality of scan electrodes can be generated using the same power supply that supplies the scan voltage in the falling period of the reset period.

摘要翻译： 在等离子体显示装置中，晶体管包括连接到电源的源极端子，其在寻址周期中顺序地向多个扫描电极施加具有扫描电压的电压脉冲，以及连接到多个扫描电极的漏极端子。 第一电阻器连接在晶体管的源极和栅极端子之间，并且第二电阻器连接在晶体管的漏极和栅极端子之间。 齐纳二极管连接到晶体管的源极和栅极端子之间的第一个电阻。 因此，可以使用在复位期间的下降期间提供扫描电压的相同电源来产生最终施加到多个扫描电极的电压。