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    TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, METHOD OF MANUFACTURING TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
    51.
    发明申请
    TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, METHOD OF MANUFACTURING TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190025701A1

    公开(公告)日：2019-01-24

    申请号：US16143492

    申请日：2018-09-27

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/32 ,  H01L21/02 ,  H01L21/027 ,  G03F7/42 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

    Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the deterioration of lithographic performance or the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) that satisfies the following requirement (a);one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10−10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) represented by the following Expression I is 103 to 10−6.Requirement (a): a compound that is selected from the group consisting of an alcohol compound, a ketone compound, and an ester compound and of which a content in the treatment liquid is 90.0 to 99.9999999 mass %Requirement (b): a compound that is selected from the group consisting of an alcohol compound having 6 or more carbon atoms, a ketone compound, an ester compound, an ether compound, and an aldehyde compound and of which a content in the treatment liquid is 10−11 to 0.1 mass % P=[Total Mass of Inorganic Matter (C)]/[Total Mass of Compound (B)]   Expression I

    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID
    55.
    发明申请
    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID 审中-公开
    生产半导体基板产品和蚀刻液的方法

    公开(公告)号：US20150179471A1

    公开(公告)日：2015-06-25

    申请号：US14624860

    申请日：2015-02-18

    Applicant: FUJIFILM Corporation

    Inventor： Atsushi MIZUTANI ,  Akiko YOSHII ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU

    IPC: H01L21/311 ,  H01L21/28

    CPC classification number: H01L21/31111 ,  C09K13/08 ,  H01L21/28158 ,  H01L21/30604

    Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

    Abstract translation: 一种制造半导体衬底产品的方法，具有以下步骤：提供含有水，氢氟酸化合物和水溶性聚合物的蚀刻液; 并且将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层，所述硅层含有杂质，从而选择性地蚀刻氧化硅层。

    POLISHING LIQUID AND POLISHING METHOD
    57.
    发明申请
    POLISHING LIQUID AND POLISHING METHOD 审中-公开
    抛光液和抛光方法

    公开(公告)号：US20150072525A1

    公开(公告)日：2015-03-12

    申请号：US14539644

    申请日：2014-11-12

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: H01L21/321 ,  C09G1/02 ,  H01L21/3105

    CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055

    Abstract: A method for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit. The body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride. The method including supplying a polishing liquid to a polishing pad on a polishing platen, rotating the polishing platen, and thereby causing relative motion of the polishing pad and a surface to be polished of the body to be polished while in contact with each other for carrying out selective polishing of the second layer with respect to the first layer, and the polishing liquid including a colloidal silica particles, an organic acid, and an anionic surfactant.

    Abstract translation: 一种用于半导体集成电路的制造的平坦化处理中的待抛光体的化学机械研磨的方法。 待抛光体包括至少含有多晶硅或改性多晶硅的第一层和含有选自氧化硅，氮化硅，碳化硅，碳氮化硅，碳氧化硅和氮氧化硅中的至少一种的第二层。 该方法包括将抛光液供给研磨台板上的抛光垫，旋转研磨台板，从而引起抛光垫的相对运动和被抛光体的被抛光表面彼此接触以承载 相对于第一层选择性地抛光第二层，并且抛光液包括胶体二氧化硅颗粒，有机酸和阴离子表面活性剂。

    RESIST PATTERN FORMING METHOD AND SEMICONDUCTOR CHIP MANUFACTURING METHOD
    58.
    发明申请
    RESIST PATTERN FORMING METHOD AND SEMICONDUCTOR CHIP MANUFACTURING METHOD 有权

    公开(公告)号：US20250155818A1

    公开(公告)日：2025-05-15

    申请号：US19019482

    申请日：2025-01-14

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/32 ,  B65D1/02 ,  G03F7/42

    Abstract: The present invention provides a resist pattern forming method which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where using a chemical liquid as a developer or rinsing solution. The chemical liquid in the resist pattern forming method according to an embodiment of the present invention contains n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.

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