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    TECHNIQUES FOR SHAPING AN ION BEAM
    52.
    发明申请
    TECHNIQUES FOR SHAPING AN ION BEAM 审中-公开
    形成离子束的技术

    公开(公告)号：US20090121149A1

    公开(公告)日：2009-05-14

    申请号：US11937849

    申请日：2007-11-09

    Applicant: Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

    Inventor： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

    IPC: H01J3/18

    CPC classification number: H01J37/1477 ,  H01J37/12 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542 ,  H01J2237/31701

    Abstract: Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.

    Abstract translation: 公开了用于成形离子束的技术。 在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

    System and method for neutralizing an ion beam using water vapor
    53.
    发明授权
    System and method for neutralizing an ion beam using water vapor 失效
    使用水蒸汽中和离子束的系统和方法

    公开(公告)号：US5814819A

    公开(公告)日：1998-09-29

    申请号：US891688

    申请日：1997-07-11

    Applicant: Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

    Inventor： Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

    IPC: H01J37/317 ,  C23C14/48 ,  G21K1/14 ,  H01J37/02 ,  H01J27/02

    CPC classification number: H01J37/026 ,  H01J2237/31701

    Abstract: An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.

    Abstract translation: 提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。 中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56） 以及连接到质量流量控制器的入口（60）。 蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。 质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。 入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。 注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。 改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

    Technique for manufacturing bit patterned media
    54.
    发明授权
    Technique for manufacturing bit patterned media 失效
    技术制造位图案媒体

    公开(公告)号：US08709533B2

    公开(公告)日：2014-04-29

    申请号：US13228426

    申请日：2011-09-08

    Applicant: Frank Sinclair ,  Julian G. Blake

    Inventor： Frank Sinclair ,  Julian G. Blake

    IPC: G11B5/708

    CPC classification number: G11B5/855

    Abstract: A technique for manufacturing hit pattern media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The method may comprise forming an intermediate layer comprising a modified region and a first region adjacent to one another, where the modified region and the first region may have at least one different property; depositing magnetic species on the first region of the intermediate layer to form an active region; and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator.

    Abstract translation: 公开了一种制造命中图形介质的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于制造钻头图案介质的方法。 该方法可以包括形成包括相邻的修饰区域和第一区域的中间层，其中改质区域和第一区域可具有至少一个不同的性质; 在所述中间层的第一区域上沉积磁性物质以形成活性区域; 并将非铁磁物质沉积在中间层的改性区上以形成隔膜。

    Mask system and method of patterning magnetic media
    55.
    发明授权
    Mask system and method of patterning magnetic media 失效
    磁性介质的掩模系统和方法

    公开(公告)号：US08679356B2

    公开(公告)日：2014-03-25

    申请号：US13111657

    申请日：2011-05-19

    Applicant: Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

    Inventor： Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

    IPC: B44C1/22

    CPC classification number: G11B5/855

    Abstract: A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.

    Abstract translation: 图案化衬底的方法包括使用压印光刻图案化设置在衬底上的光致抗蚀剂层，并蚀刻设置在图案化的光致抗蚀剂层和衬底之间的硬掩模层的暴露部分。 该方法还可以包括将离子注入到衬底中的磁性层中，同时将蚀刻的硬掩模层设置在其上。

    System and method for manipulating an ion beam
    56.
    发明授权
    System and method for manipulating an ion beam 有权
    用于操纵离子束的系统和方法

    公开(公告)号：US08604443B2

    公开(公告)日：2013-12-10

    申请号：US12944537

    申请日：2010-11-11

    Applicant: Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    Inventor： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    IPC: H01J1/50

    CPC classification number: H01J37/3171 ,  H01J37/153 ,  H01J2237/1532

    Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

    Abstract translation: 用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。 下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。 在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。

    End terminations for electrodes used in ion implantation systems
    59.
    发明授权
    End terminations for electrodes used in ion implantation systems 有权
    用于离子注入系统的电极的终端

    公开(公告)号：US08309935B2

    公开(公告)日：2012-11-13

    申请号：US12418053

    申请日：2009-04-03

    Applicant: Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    Inventor： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    IPC: H01J3/14

    CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J2237/036 ,  H01J2237/15

    Abstract: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    Abstract translation: 离子注入系统包括静电透镜。 静电透镜包括端子电极，接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状，以便在光束通过静电透镜时保持光束的均匀性。

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