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    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM
    3.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM 审中-公开
    用于生产质量分析离子束的系统和方法

    公开(公告)号：US20120168622A1

    公开(公告)日：2012-07-05

    申请号：US12981002

    申请日：2010-12-29

    申请人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    IPC分类号： H01J49/30

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/20 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/20221

    摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.

    摘要翻译： 植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。 磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。 质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。 工件保持器构造成在与第一方向垂直的第二方向上相对于质量分析板移动，其中通过质量分析板传输的离子图案在衬底处沿着第一方向形成连续的离子束电流。

    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION
    4.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
    用于生产用于高通量运行的质量分析离子束的系统和方法

    公开(公告)号：US20130001414A1

    公开(公告)日：2013-01-03

    申请号：US13175404

    申请日：2011-07-01

    申请人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    IPC分类号： H01J49/10

    CPC分类号： H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

    摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

    摘要翻译： 用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。 该组孔被构造成从离子源提取离子以形成多个子束。 该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。 该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于 质量分析板沿第一方向。

    Techniques for independently controlling deflection, deceleration and focus of an ion beam
    8.
    发明授权
    Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权
    用于独立控制离子束的偏转，减速和聚焦的技术

    公开(公告)号：US07888653B2

    公开(公告)日：2011-02-15

    申请号：US12348091

    申请日：2009-01-02

    申请人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    发明人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    IPC分类号： H01J3/14 ,  H01J49/22 ,  H01J23/083

    CPC分类号： H01J37/1471 ,  H01J37/12 ,  H01J37/3171

    摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

    摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。

    TECHNIQUES FOR SHAPING AN ION BEAM
    9.
    发明申请
    TECHNIQUES FOR SHAPING AN ION BEAM 审中-公开
    形成离子束的技术

    公开(公告)号：US20090121149A1

    公开(公告)日：2009-05-14

    申请号：US11937849

    申请日：2007-11-09

    申请人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

    发明人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

    IPC分类号： H01J3/18

    CPC分类号： H01J37/1477 ,  H01J37/12 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542 ,  H01J2237/31701

    摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.

    摘要翻译： 公开了用于成形离子束的技术。 在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

    SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM
    10.
    发明申请
    SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM 有权
    用于操纵离子束的系统和方法

    公开(公告)号：US20110114849A1

    公开(公告)日：2011-05-19

    申请号：US12944537

    申请日：2010-11-11

    申请人： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    发明人： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    IPC分类号： H01J1/50

    CPC分类号： H01J37/3171 ,  H01J37/153 ,  H01J2237/1532

    摘要： A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

    摘要翻译： 用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。 下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。 在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。