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    MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS
    51.
    发明申请
    MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 有权
    基于混合金属化合物的成像仪

    公开(公告)号：US20120113706A1

    公开(公告)日：2012-05-10

    申请号：US13383572

    申请日：2009-09-04

    申请人： R. Stanley Williams ,  Jinhua ` Yang ,  Matthew Pickett ,  Gilberto Ribeiro ,  John Paul Strachan

    发明人： R. Stanley Williams ,  Jinhua ` Yang ,  Matthew Pickett ,  Gilberto Ribeiro ,  John Paul Strachan

    IPC分类号： G11C11/00 ,  H01L21/8239 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/72 ,  G11C2213/73 ,  H01L29/8615 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100′) and an ON-switched diode (100″) are also provided, A method of operating the memristor is further provided.

    摘要翻译： 基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）; 第二电极（120）; 与至少一个完全氧化相的层（110,1 110a，110b）物理接触的混合金属 - 价相的层（105）。 混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场（125）而漂移进入和离开完全氧化相。 第一和第二电极中的一个与混合金属价态层的层或完全氧化相的层（110a）电接触，另一个与层（或其他层（110b））电接触 ））的完全氧化相。 忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。 还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

    MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES
    52.
    发明申请
    MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES 有权
    具有包含多个相位的复合材料的开关层的电容器

    公开(公告)号：US20110309321A1

    公开(公告)日：2011-12-22

    申请号：US12819763

    申请日：2010-06-21

    申请人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    发明人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    IPC分类号： H01L27/24 ,  H01L21/26 ,  H01L45/00

    CPC分类号： H01L27/24 ,  G11C13/0007 ,  G11C2213/52 ,  H01L45/04 ,  H01L45/145

    摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.

    摘要翻译： 公开了具有包括多相复合的开关层的忆阻器。 忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相， 在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。 还公开了制造忆阻器和使用忆阻器的横杆的方法。

    COMPACT SENSOR SYSTEM
    53.
    发明申请
    COMPACT SENSOR SYSTEM 有权
    紧凑型传感器系统

    公开(公告)号：US20110267610A1

    公开(公告)日：2011-11-03

    申请号：US12772063

    申请日：2010-04-30

    申请人： Min HU ,  Wei Wu ,  Fung Suong Ou ,  Zhen Peng ,  Zhiyong Li ,  R. Stanley Williams

    发明人： Min HU ,  Wei Wu ,  Fung Suong Ou ,  Zhen Peng ,  Zhiyong Li ,  R. Stanley Williams

    IPC分类号： G01J3/44

    CPC分类号： G01N21/658 ,  G01N21/7746

    摘要： A compact sensor system comprising: an analysis cell configured for photon-matter interaction, where photons are received from a light source; and an integrated-optical spectral analyzer configured for identifying a set of frequencies, the integrated-optical spectral analyzer comprising: a waveguide coupled with the analysis cell, the waveguide configured for propagating a set of frequencies through the waveguide; one or more ring resonators coupled with the waveguide, the one or more ring resonators comprising a predetermined bandwidth and configured for capturing the set of frequencies corresponding to frequencies within the predetermined bandwidth; and one or more frequency detectors coupled with the one or more tunable ring resonators, the one or more frequency detectors configured for generating electrical signals that identify each of the set of frequencies.

    摘要翻译： 一种紧凑的传感器系统，包括：配置用于光子 - 物质相互作用的分析单元，其中从光源接收光子; 所述集成光谱分析仪包括：与所述分析单元耦合的波导，所述波导被配置为通过所述波导传播一组频率;以及波导，其被配置为用于识别一组频率。 一个或多个与所述波导耦合的环形谐振器，所述一个或多个环形谐振器包括预定带宽并被配置用于捕获与所述预定带宽内的频率相对应的频率集合; 以及与所述一个或多个可调环形谐振器耦合的一个或多个频率检测器，所述一个或多个频率检测器被配置用于产生标识所述一组频率中的每一个的电信号。

    Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
    56.
    发明授权
    Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure 失效
    用于纳米压印光刻的聚合物溶液，以减少压印温度和压力

    公开(公告)号：US07750059B2

    公开(公告)日：2010-07-06

    申请号：US10313596

    申请日：2002-12-04

    申请人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    发明人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    IPC分类号： B29C35/08

    CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C59/022 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/033

    摘要： A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.

    摘要翻译： 提供了通过压印在基板上形成特征的方法。 该方法包括：（a）形成包含至少一种溶解在至少一种可聚合单体中的聚合物的聚合物溶液; 和（b）将聚合物溶液沉积在基底上以在其上形成液膜; 然后：（c）通过使单体聚合并任选地交联聚合物从而形成聚合物膜来固化液膜，所述聚合物膜具有玻璃化转变温度（Tg）; 并用具有所需图案的模具印刷聚合物膜，以在聚合物膜中形成相应的负图案，或（d）用模具印刷液膜并固化以形成聚合物膜。 压印温度比Tg高出10℃，或者如果薄膜处于液体状态，则其温度更低。 压印的压力可以在100-500psi的范围内。

    Electric-field-enhancement structures including dielectric particles, apparatus including same, and methods of use
    57.
    发明授权
    Electric-field-enhancement structures including dielectric particles, apparatus including same, and methods of use 失效
    包括电介质颗粒的电场增强结构，包括其的设备和使用方法

    公开(公告)号：US07696477B2

    公开(公告)日：2010-04-13

    申请号：US11724409

    申请日：2007-03-14

    申请人： Mihail Sigalas ,  R. Stanley Williams ,  David A. Fattal ,  Shih-Yuan Wang ,  Raymond G. Beausoleil

    发明人： Mihail Sigalas ,  R. Stanley Williams ,  David A. Fattal ,  Shih-Yuan Wang ,  Raymond G. Beausoleil

    IPC分类号： G01N23/00

    CPC分类号： G01N21/658 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/72 ,  Y10S977/723

    摘要： In one aspect of the present invention, an electric-field-enhancement structure is disclosed. The electric-field-enhancement structure includes a substrate and an ordered arrangement of dielectric particles having at least two adjacent dielectric particles spaced from each other a controlled distance. The controlled distance is selected so that when a resonance mode is excited in each of the at least two adjacent dielectric particles responsive to excitation electromagnetic radiation, each of the resonance modes interacts with each other to result in an enhanced electric field between the at least two adjacent dielectric particles. Other aspects of the present invention are electric-field-enhancement apparatuses that utilize the described electric-field-enhancement structures, and methods of enhancing an electric field between adjacent dielectric particles.

    摘要翻译： 在本发明的一个方面，公开了一种电场增强结构。 电场增强结构包括基底和具有至少两个相邻的电介质颗粒彼此间隔可控距离的介质颗粒的有序布置。 控制距离被选择为使得当谐振模式在响应于激发电磁辐射的至少两个相邻电介质颗粒中的每一个中被激发时，每个谐振模式彼此相互作用以在至少两个之间产生增强的电场 相邻的电介质颗粒。 本发明的其他方面是利用所述电场增强结构的电场增强装置以及增强相邻电介质颗粒之间的电场的方法。

    Quantum information processing using electromagnetically induced transparency
    59.
    发明授权
    Quantum information processing using electromagnetically induced transparency 有权
    使用电磁感应透明度的量子信息处理

    公开(公告)号：US07560726B2

    公开(公告)日：2009-07-14

    申请号：US10364987

    申请日：2003-02-11

    申请人： Raymond G. Beausoleil ,  Adrian P. Kent ,  Philip J. Kuekes ,  William J. Munro ,  Timothy P. Spiller ,  R. Stanley Williams

    发明人： Raymond G. Beausoleil ,  Adrian P. Kent ,  Philip J. Kuekes ,  William J. Munro ,  Timothy P. Spiller ,  R. Stanley Williams

    IPC分类号： H01J40/14

    CPC分类号： B82Y10/00 ,  G06N99/002

    摘要： Quantum information processing structures and methods use photons and four-level matter systems in electromagnetically induced transparency (EIT) arrangements for one and two-qubit quantum gates, two-photon phase shifters, and Bell state measurement devices. For efficient coupling of the matter systems to the photons while decoupling the matter systems from the phonon bath, molecular cages or molecular tethers maintain the atoms within the electromagnetic field of the photon, e.g., in the evanescent field surrounding the core of an optical fiber carrying the photons. To reduce decoherence caused by spontaneous emissions, the matter systems can be embedded in photonic bandgap crystals or the matter systems can be selected to include metastable energy levels.

    摘要翻译： 量子信息处理结构和方法使用光子和四级物质系统在一个和两个量子位量子门，双光子移相器和贝尔状态测量装置的电磁感应透明度（EIT）布置中。 为了将物质系统有效耦合到光子，同时将物质系统与声子浴解耦，分子笼或分子系链将原子保持在光子的电磁场内，例如在包含光纤的纤芯的周围的消逝场中 光子。 为了减少由自发辐射引起的去相干，物质系统可以嵌入光子带隙晶体中，或者可以选择物质系统来包括亚稳态能级。