Working electrode design for electrochemical processing of electronic components
    55.
    发明授权
    Working electrode design for electrochemical processing of electronic components 有权
    电子元器件电化学处理工作电极设计

    公开(公告)号:US08926820B2

    公开(公告)日:2015-01-06

    申请号:US13612661

    申请日:2012-09-12

    摘要: An electroplating apparatus including a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

    摘要翻译: 一种电镀设备,包括用于容纳电镀电解质的电镀槽。 对电极,例如阳极,存在于镀槽的第一部分中。 阴极系统存在于镀槽的第二部分中。 阴极系统包括工作电极和小偷电极。 小电极存在于工作电极和对电极之间。 防窃电极包括与电镀电解质接触的外表面,其与工作电极的电镀表面偏移。 在一个实施例中,窃电电极围绕工作电极的周边重叠一部分工作电极。 在一个实施例中,提供了使用提供镀层厚度增加的均匀性的上述电镀设备的方法。

    Working electrode design for electrochemical processing of electronic components
    57.
    发明授权
    Working electrode design for electrochemical processing of electronic components 有权
    电子元件电化学处理工作电极设计

    公开(公告)号:US08784618B2

    公开(公告)日:2014-07-22

    申请号:US12806719

    申请日:2010-08-19

    IPC分类号: C25D17/00 C25D7/12

    摘要: An electroplating apparatus is provided that includes a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

    摘要翻译: 提供一种电镀设备,其包括用于容纳电镀液的镀槽。 对电极,例如阳极,存在于镀槽的第一部分中。 阴极系统存在于镀槽的第二部分中。 阴极系统包括工作电极和小偷电极。 小电极存在于工作电极和对电极之间。 防窃电极包括与电镀电解质接触的外表面,其与工作电极的电镀表面偏移。 在一个实施例中,窃电电极围绕工作电极的周边重叠一部分工作电极。 在一个实施例中,提供了使用提供镀层厚度增加的均匀性的上述电镀设备的方法。

    OHMIC CONTACT OF THIN FILM SOLAR CELL
    58.
    发明申请
    OHMIC CONTACT OF THIN FILM SOLAR CELL 审中-公开
    薄膜太阳能电池的OHMIC接触

    公开(公告)号:US20140030843A1

    公开(公告)日:2014-01-30

    申请号:US13558383

    申请日:2012-07-26

    IPC分类号: H01L31/0264 B82Y40/00

    摘要: A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

    摘要翻译: 包含碳纳米管层和高功函数材料层中的至少一种的耐硫属材料沉积在基板上的过渡金属层上。 半导体硫族化物/凯斯特石材料层沉积在抗硫属材料上。 碳纳米管(如果存在)可以通过提供从过渡金属层通过硫属元素抵抗材料和半导体硫族化物材料的直接导电路径来降低接触电阻。 如果存在高功函数材料层,则可以通过减少过渡金属层中的过渡金属的硫族化来降低接触电阻。 降低接触电阻可以提高包括硫族化物半导体材料的太阳能电池的效率。

    Vertical nanowire FET devices
    59.
    发明授权
    Vertical nanowire FET devices 有权
    垂直纳米线FET器件

    公开(公告)号:US08637849B2

    公开(公告)日:2014-01-28

    申请号:US12984653

    申请日:2011-01-05

    IPC分类号: H01L29/06

    摘要: A Vertical Field Effect Transistor (VFET) formed on a substrate, with a conductive bottom electrode formed thereon. A bottom dielectric spacer layer and a gate dielectric layer surrounded by a gate electrode are formed thereabove. Thereabove is an upper spacer layer. A pore extends therethrough between the electrodes. A columnar Vertical Semiconductor Nanowire (VSN) fills the pore and between the top and bottom electrodes. An FET channel is formed in a central region of the VSN between doped source and drain regions at opposite ends of the VSN. The gate dielectric structure, that is formed on an exterior surface of the VSN above the bottom dielectric spacer layer, separates the VSN from the gate electrode.

    摘要翻译: 形成在衬底上的垂直场效应晶体管(VFET),其上形成有导电底电极。 在其上方形成由栅电极包围的底部电介质隔离层和栅介质层。 以上是上隔离层。 孔在电极之间延伸穿过。 柱状垂直半导体纳米线(VSN)填充孔和顶部和底部电极之间。 在VSN的相对端处的掺杂源极和漏极区域之间的VSN的中心区域中形成FET沟道。 在底部电介质间隔层上方的VSN的外表面上形成的栅极电介质结构将VSN与栅电极分离。

    METHOD OF FABRICATING A FLEXIBLE PHOTOVOLTAIC FILM CELL WITH AN IRON DIFFUSION BARRIER LAYER
    60.
    发明申请
    METHOD OF FABRICATING A FLEXIBLE PHOTOVOLTAIC FILM CELL WITH AN IRON DIFFUSION BARRIER LAYER 有权
    利用铁扩散障碍层制作柔性光伏电池的方法

    公开(公告)号:US20130074915A1

    公开(公告)日:2013-03-28

    申请号:US13245016

    申请日:2011-09-26

    摘要: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

    摘要翻译: 一种制造具有铁扩散阻挡层的柔性光伏电池的方法。 该方法包括:提供包括铁的箔基板; 在所述箔基板上形成铁扩散阻挡层,其中所述铁扩散阻挡层防止所述铁扩散; 在铁扩散阻挡层上形成电极层; 以及在所述电极层上形成至少一个光吸收层。 还提供了一种柔性光伏电池,该电池包括:包含铁的箔基材; 形成在所述箔基板上以防止铁扩散的铁扩散阻挡层; 形成在铁扩散阻挡层上的电极层; 以及形成在电极层上的至少一个光吸收层。