公开(公告)号：US6106737A

公开(公告)日：2000-08-22

申请号：US94451

申请日：1998-06-10

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响晶圆。

公开(公告)号：US5919332A

公开(公告)日：1999-07-06

申请号：US659387

申请日：1996-06-06

申请人： Akira Koshiishi ,  Masahiro Ogasawara ,  Keizo Hirose ,  Kazuya Nagaseki ,  Riki Tomoyoshi ,  Makoto Aoki

发明人： Akira Koshiishi ,  Masahiro Ogasawara ,  Keizo Hirose ,  Kazuya Nagaseki ,  Riki Tomoyoshi ,  Makoto Aoki

IPC分类号： C23C16/509 ,  H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32633 ,  H01J2237/022 ,  Y10S156/915

摘要： A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.

摘要翻译： 下部绝缘构件13布置在作为下电极的可移动器6周围，并且上绝缘构件31布置在上电极21周围。上绝缘构件的外端部31a位于下绝缘构件13的外侧， 低于晶片W的上表面。下绝缘构件13与上绝缘构件31之间的最窄距离被布置成小于电极之间的间隙G. 在电极之间产生的等离子体的扩散被限制并防止扩散到侧面，使得处理容器3的内壁不被溅射。

公开(公告)号：US5368676A

公开(公告)日：1994-11-29

申请号：US164874

申请日：1993-12-09

申请人： Kazuya Nagaseki ,  Shuuji Mochizuki

发明人： Kazuya Nagaseki ,  Shuuji Mochizuki

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/31 ,  H05H1/50 ,  H01L21/00 ,  C23C16/50

CPC分类号： H01J37/3233

摘要： A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are placed on the electrodes. High frequency voltage is applied between the paired parallel electrodes to generate electric field of high frequency, perpendicular to the process face of the wafer, in the processing chamber. Etching gas is introduced into the processing chamber and made plasma in it. An electron supply chamber provided with an electron generating filament therein is connected to the processing chamber. Electrons generated in the electron supply chamber are induced into the processing chamber by induction magnetic field and help the etching gas be made plasma.

摘要翻译： 一种等离子体蚀刻装置，其具有可调节以高度减压的处理室。 一对平行电极布置在处理室中，半导体晶片被放置在电极上。 在成对的并联电极之间施加高频电压，以在处理室中产生垂直于晶片的工艺面的高频电场。 将蚀刻气体引入处理室并在其中制成等离子体。 在其中设置有电子发生丝的电子供给室连接到处理室。 在电子供给室中产生的电子通过感应磁场被引入处理室，并帮助蚀刻气体被制成等离子体。

公开(公告)号：US08475622B2

公开(公告)日：2013-07-02

申请号：US13524895

申请日：2012-06-15

申请人： Nobuyuki Nagayama ,  Naoyuki Satoh ,  Keiichi Nagakubo ,  Kazuya Nagaseki

发明人： Nobuyuki Nagayama ,  Naoyuki Satoh ,  Keiichi Nagakubo ,  Kazuya Nagaseki

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/465 ,  C23C16/0227 ,  C23C16/325 ,  C23C16/4418 ,  H01J37/32467 ,  H01J37/32862

摘要： A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

摘要翻译： 重复使用等离子体处理装置中的消耗部件的方法包括清洁由特定时间段内进行的第一等离子体处理而被SiC腐蚀的消耗部件的表面。 该方法还包括通过CVD在被蚀刻的消耗部件的清洁表面上沉积SiC。 该方法还包括通过使用再制造的可消耗部件对基板上的第二等离子体处理进行第二等离子体处理，对其上沉积有SiC的侵蚀的消耗部件进行加工，从而重新制造具有预定形状的消耗部件。

公开(公告)号：US20100024983A1

公开(公告)日：2010-02-04

申请号：US12578007

申请日：2009-10-13

申请人： Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

发明人： Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32082 ,  H01J37/3266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

摘要翻译： 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

公开(公告)号：US07141178B2

公开(公告)日：2006-11-28

申请号：US10497534

申请日：2002-12-09

申请人： Kazuya Nagaseki ,  Takanori Mimura ,  Hiroki Miyajima

发明人： Kazuya Nagaseki ,  Takanori Mimura ,  Hiroki Miyajima

IPC分类号： H01L21/00 ,  B44C1/22

CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083

摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

公开(公告)号：US20060213865A1

公开(公告)日：2006-09-28

申请号：US10538064

申请日：2003-12-25

申请人： Masanobu Honda ,  Shoichiro Matsuyama ,  Kazuya Nagaseki ,  Hisataka Hayashi

发明人： Masanobu Honda ,  Shoichiro Matsuyama ,  Kazuya Nagaseki ,  Hisataka Hayashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31138 ,  H01J37/32522 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32688 ,  H01J2237/3341

摘要： A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.

摘要翻译： 构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。 形成有有机材料膜的基板（W）由支撑电极（2）支撑。 在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场 ）。 将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。 用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。 工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

公开(公告)号：US07109123B2

公开(公告)日：2006-09-19

申请号：US10647433

申请日：2003-08-26

申请人： Takanori Mimura ,  Kazuya Nagaseki ,  Kenji Yamamoto ,  Katsumi Horiguchi ,  Yahui Huang

发明人： Takanori Mimura ,  Kazuya Nagaseki ,  Kenji Yamamoto ,  Katsumi Horiguchi ,  Yahui Huang

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/3266 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/76898

摘要： A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

摘要翻译： Si蚀刻方法通过等离子体辅助蚀刻工艺蚀刻保持在放置在处理容器中的基座上的Si晶片。 通过混合诸如SF 6气体的氟化硫气体或碳氟化合物气体O 2气体和诸如SiF 4气体的氟硅气体制备的混合蚀刻气体， 将气体供应到处理容器中。 将40MHz以上的RF功率施加到混合蚀刻气体以产生等离子体。 用等离子体中所含的自由基和离子蚀刻Si晶片。

公开(公告)号：US07023002B2

公开(公告)日：2006-04-04

申请号：US10895039

申请日：2004-07-21

申请人： Kazuya Nagaseki ,  Tadashi Onishi ,  Koichi Murakami ,  Daisuke Hayashi ,  Akiko Kamigori ,  Minoru Honda

发明人： Kazuya Nagaseki ,  Tadashi Onishi ,  Koichi Murakami ,  Daisuke Hayashi ,  Akiko Kamigori ,  Minoru Honda

IPC分类号： G21G5/00 ,  H01J37/00

CPC分类号： H01L21/67161 ,  G03F7/40 ,  H01J2237/31 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785

摘要： Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.

摘要翻译： 安装在真空室中的是用于支撑作为待处理基板的半导体晶片的安装台，其中电子束照射机构安装在用于产生电子束的真空室的天花板上。 安装台适于通过提升/降低装置垂直移动，允许将电子束照射机构和半导体晶片之间的距离设定在期望值。 这使得可以对待处理的基底的整个表面进行均匀的令人满意的处理。

公开(公告)号：US20050082256A1

公开(公告)日：2005-04-21

申请号：US10960538

申请日：2004-10-08

申请人： Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

发明人： Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

IPC分类号： C23F1/00 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01J37/32688 ,  H01J2237/3347 ,  H01L21/31138 ,  H01L21/31144

摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

摘要翻译： 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。 在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。