摘要:
A retractable seat device includes a seat body having first and second ends rotatably connected to rear and front legs, respectively, first and second arms, and a link. When the first arm is rotated in a second direction, the rear leg and the front leg connected to the rear leg with the link are unfolded, a rear lock mechanism provided on the rear leg becomes engaged with a first striker provided on the vehicle floor, and then a front lock mechanism provided on the front leg becomes engaged with a second striker provided on the vehicle floor, so that the seat body is supported on the vehicle floor by the rear leg and the front leg. The rear lock mechanism has an interlock structure including a ratchet and a pawl, and the front lock mechanism has a hook lock structure including a hook.
摘要:
A vehicle seat apparatus includes a first latch mechanism supported at a front portion of a seat cushion frame supporting a vehicle seat, a second latch mechanism supported at a rear portion of the seat cushion frame, a first striker mechanism provided on a vehicle floor and being engagable and disengagable relative to the first latch mechanism, a second striker mechanism provided on the vehicle floor and being engagable and disengagable relative to the second latch mechanism, an upper bracket provided at the first latch mechanism and fixed to the seat cushion frame, and a lower bracket provided at the first latch mechanism and rotatably supported at the upper bracket by a rotating shaft. The upper bracket includes a supporting portion, and the lower bracket moves to be disengaged from the first striker mechanism due to a contact of the supporting portion to the vehicle floor side while the vehicle seat being tumbled is reclined in the rear direction of the vehicle.
摘要:
A semiconductor memory device comprises a memory array on a semiconductor substrate having a constitution such that a plurality of memory cells where one end of the variable resistive element is connected to either an emitter or a collector of a bipolar transistor are arranged in the row and the column directions in a matrix form, the other of the emitter or the collector of the bipolar transistor in each memory cell in the same column is connected to common source line extending in the column direction, a base of the bipolar transistor in each memory cell in the same row is connected to common word line extending in the row direction, the other end of the variable resistive element in each memory cell in the same column is connected to common bit line extending in the column direction.
摘要:
A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要:
A sputtering method of depositing a titanium nitride film on a titanium film in contact with a silicon at a bottom of a contact hole is provided, wherein the sputtering method is carried out at a temperature of the silicon region of not less than 450° C., so that the titanium nitride film has a compressive stress of not higher than 5×109 dyne/cm2 whereby the titanium film has such a high stability as preventing any crack upon changing the compressive stress to a tensile stress by a heat treatment.
摘要翻译:提供了在接触孔底部与硅接触的钛膜上沉积氮化钛膜的溅射方法,其中溅射方法在硅区域的温度不低于450℃下进行。 ,使得氮化钛膜具有不高于5×10 9达因/ cm 2的压缩应力,由此钛膜具有如下稳定性:当通过热量将压缩应力改变为拉伸应力时,可以防止任何裂纹 治疗。
摘要:
A semiconductor device with satisfactory bonding ability of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for burying wiring space portions. The semiconductor substrate, forming an anti-reflection layer of a refractory metal or compound thereof, on the metal layer, and forming an insulation layer on the anti-reflection layer. There after, the insulation layer is patterned and a wiring is formed by etching the anti-reflection layer and the metal layer while taking the patterned insulation layer as a mask and leaving the anti-reflection layer and the insulation layer on the wiring. Subsequently, the patterned wiring is buried with an SiOF layer as an Si oxide layer containing fluorine, together with the anti-reflection layer and the insulation layer on the upper surface thereby.
摘要:
As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要:
A method for decreasing the concentration of a chlorinated aromatic compound in the exhaust gas from a combustion furnace. The exhaust gas from the combustion furnace is passed through a bag filter. The concentration of the chlorinated aromatic compound in the exhaust gas is measured and the operating temperature of the bag filter is adjusted based on the measured concentration of the chlorinated aromatic compound in order to decrease the concentration of the chlorinated aromatic compound in the exhaust gas.
摘要:
In an electric throttle-control apparatus for controlling an open position of a throttle valve 6 connected to reduction gears 47 to reduce rotational speed of the motor 4, by driving a motor 4 which includes a commutator 32 with a plurality of slots 44, and brushes 31 and 31′, the number of the slots in the commutator and the arrangement of brushes on the slots are set such that even and odd number slot states appear alternately in an electrical equivalent-circuit of a wire-connection among slots including the brushes while the motor rotates. Further, if the number of the slots 44 is the odd number 9, 11, or 13, the brushes 31 and 31′ are arranged in a 180° opposed placement, and if the number of the slots 44 is the even number 10 or 12, the brushes 31 and 31′ are arranged in a non-opposed placement shifted from a 180° opposed placement.
摘要:
A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving, both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal which receives it from another radio base station to which the communication signal will be hand-over to output one of the first and second communication signals to the associated interface circuit, and for transmitting the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over. Thus, during the hand-over, the diversity hand-over processing unit transmits the communication signal from the mobile station on the reception side for communication to both the radio base station as a source of hand-over and the radio base station as a destination of hand-over so that the communication is established between the mobile station on the transmission side for communication and the mobile station as a destination of hand-over and on the reception side for communication.