公开(公告)号：US20110068363A1

公开(公告)日：2011-03-24

申请号：US12957908

申请日：2010-12-01

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L33/52

CPC分类号： H01L33/44 ,  H01L33/38

摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US20080121903A1

公开(公告)日：2008-05-29

申请号：US11942441

申请日：2007-11-19

申请人： Yuuji Hiramatsu ,  Nobukata Okano ,  Tomonori Hino

发明人： Yuuji Hiramatsu ,  Nobukata Okano ,  Tomonori Hino

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L25/0753 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode which has a significantly high luminous efficiency and which can be manufactured at a reasonable cost by one epitaxial growth and a manufacturing method thereof are provided. The above method includes: preparing a substrate provided with convex portions on one major surface, the convex portions being formed from a dielectric substance which is different from the substrate and which has a refractive index of 1.7 to 2.2; growing a first nitride-based III-V compound semiconductor layer in a concave portion on the substrate; growing a second nitride-based III-V compound semiconductor layer on the substrate from the first nitride-based III-V compound semiconductor layer in a lateral direction; and growing, on the second nitride-based III-V compound semiconductor layer, a first conductive type third nitride-based III-V compound semiconductor layer, an active layer, and a second conductive type fourth nitride-based III-V compound semiconductor layer.

摘要翻译： 提供了具有显着高的发光效率并且可以通过一种外延生长以合理的成本制造的发光二极管及其制造方法。 上述方法包括：在一个主表面上制备设置有凸部的基板，所述凸部由与所述基板不同且折射率为1.7〜2.2的电介质形成; 在衬底的凹部中生长第一氮化物III-V族化合物半导体层; 在第一氮化物系III-V族化合物半导体层的横向生长基板上的第二氮化物系III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上生长第一导电型第三氮化物III-V族化合物半导体层，有源层和第二导电型第四氮化物III-V族化合物半导体层 。

公开(公告)号：US20070138487A1

公开(公告)日：2007-06-21

申请号：US11564588

申请日：2006-11-29

申请人： Yoshiake Watanabe ,  Tomonori Hino ,  Toshimasa Kobayashi ,  Hironobu Narui

发明人： Yoshiake Watanabe ,  Tomonori Hino ,  Toshimasa Kobayashi ,  Hironobu Narui

IPC分类号： H01L33/00

CPC分类号： H01L21/244 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44

摘要： A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a base layer and a light reflection layer in this order. The semiconductor layer is formed by laminating a buffer layer, a GaN layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer in this order. The base layer is formed on a surface of the p-type contact layer, and is made of a transition metal with Ag (silver) with a thickness of 1 nm to 10 nm inclusive. The light reflection layer is formed on a surface of the base layer, and is made of Ag with a predetermined material.

摘要翻译： 提供了一种在光反射层和半导体层之间具有高反射率和高电接触性能的半导体发光器件。 半导体发光器件依次层叠半导体层，基底层和光反射层而形成。 通过依次层叠缓冲层，GaN层，n型接触层，n型覆盖层，有源层，p型覆盖层和p型接触层来形成半导体层。 基底层形成在p型接触层的表面上，并且由具有1nm至10nm厚度的Ag（银）的过渡金属制成。 光反射层形成在基底层的表面上，并且由具有预定材料的Ag制成。

公开(公告)号：US20070110449A1

公开(公告)日：2007-05-17

申请号：US11619352

申请日：2007-01-03

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： H04B10/00 ,  H04B10/12

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US20070086499A1

公开(公告)日：2007-04-19

申请号：US11613586

申请日：2006-12-20

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度是非氧化区域的宽度的一倍以上或其以上的七倍以下。 电流限制层与有源层之间的距离优选为50nm以上，500nm以下，更优选为180nm以上。

公开(公告)号：US20060120423A1

公开(公告)日：2006-06-08

申请号：US11276463

申请日：2006-03-01

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。

公开(公告)号：US20050167835A1

公开(公告)日：2005-08-04

申请号：US11090340

申请日：2005-03-25

申请人： Shigetaka Tomiya ,  Tomonori Hino

发明人： Shigetaka Tomiya ,  Tomonori Hino

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01L23/52

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/1082 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12 ,  Y10S438/962

摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

公开(公告)号：US20050139856A1

公开(公告)日：2005-06-30

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/343 ,  H01L29/24 ,  H01L29/26 ,  H01S5/183 ,  H01S5/22

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。