Signal transmission system, and signal transmission line
    51.
    发明申请
    Signal transmission system, and signal transmission line 有权
    信号传输系统和信号传输线

    公开(公告)号:US20050040846A1

    公开(公告)日:2005-02-24

    申请号:US10898874

    申请日:2004-07-26

    CPC分类号: H04L25/08 H03K17/04106

    摘要: To transmit a high-speed digital signal of several tens GHz via a differential line by connecting a differential line referring to the ground to differential lines not referring to the ground, there is provided a signal transmission system which transmits a digital signal between circuit blocks via a signal transmission line, each of the circuit blocks basically including a functional circuit, a reception/transmission circuit formed separately from the functional circuit and an impedance-matched transmission line (115) formed between reception and transmission ends of the reception/transmission circuit; a differential line (105) referring to the ground (110), led out from a differential output driver, being formed from differential signal lines disposed symmetrically with respect to the ground (110) in the circuit block, only differential pair lines (111, 112) not referring to the ground being extended directly from the differential signal lines disposed symmetrically with respect to the ground in the signal transmission line (115).

    摘要翻译: 通过将差分线连接到不涉及地面的差分线,通过差分线路传输数十GHz的高速数字信号,提供了一种信号传输系统,其通过电路块之间的数字信号经由 信号传输线,每个电路块基本上包括功能电路,与功能电路分开形成的接收/发送电路和形成在接收/发送电路的接收和发送端之间的阻抗匹配传输线路(115); 从差分输出驱动器引出的对地(110)的差分线(105)由相对于电路块中的接地(110)对称设置的差分信号线形成,仅差分对线(111, 112),而不是直接从在信号传输线路(115)中相对于地面对称设置的差动信号线延伸的地面。

    Semiconductor integrated circuit having switching transistors and varactors
    52.
    发明授权
    Semiconductor integrated circuit having switching transistors and varactors 有权
    具有开关晶体管和变容二极管的半导体集成电路

    公开(公告)号:US06731153B2

    公开(公告)日:2004-05-04

    申请号:US09963500

    申请日:2001-09-27

    IPC分类号: H03K1704

    CPC分类号: H03K19/01707

    摘要: A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.

    摘要翻译: CMOS线路驱动器由p-和nMOS晶体管组成。 pMOS变容二极管介于pMOS晶体管的源极和电源之间,而nMOS变容二极管插在nMOS晶体管的源极和地之间。 这些MOS可变电抗器的尺寸可以与p型或nMOS晶体管的尺寸相同。 或者,这些MOS变容二极管中的每一个可以具有比p型或nMOS晶体管的沟道面积的两倍的沟道面积。 将输入到线路驱动器的信号的反相形式提供给MOS可变电抗器的栅极。 以这种方式,构成线路驱动器的MOS晶体管可以高速切换。

    Electronic device
    53.
    发明授权

    公开(公告)号:US06522173B1

    公开(公告)日:2003-02-18

    申请号:US09280652

    申请日:1999-03-29

    申请人: Kanji Otsuka

    发明人: Kanji Otsuka

    IPC分类号: H01P308

    摘要: An electronic device includes a wiring board, and at least one pair of signal lines that is provided on the wiring board in parallel and has an equal length. A chip is mounted on the wiring board and includes at least one differential driver which outputs complementary digital transmit signals to said at least one of lines. A pair of power system lines is provided to supply first and second power supply voltages to the above-mentioned at least one differential driver. The power system lines are parallel to each other and have an equal length.

    Semiconductor device and electronic apparatus using semiconductor device
    57.
    发明授权
    Semiconductor device and electronic apparatus using semiconductor device 失效
    半导体器件和使用半导体器件的电子设备

    公开(公告)号:US5258649A

    公开(公告)日:1993-11-02

    申请号:US918137

    申请日:1992-07-23

    摘要: A silicon chip is mounted on a portion a heat dissipation body, and a carrier film is inserted into a resin composition material. Each of input/output electrode portions of the silicon chip is connected electrically to each of lead wires of the carrier film. The electrical connection between the silicon chip and a circuit substrate is carried out by the carrier film. Another portion of the heat dissipation body is exposed on a surface of the resin composition material. A fixing means for fixing the resin composition material is formed integrally to the resin composition material or to the heat dissipation body. The resin composition material is fixed to a circuit substrate through the fixing means. The mechanical fixing between the resin composition material and the circuit substrate is carried out by the fixing means, which is separate from the carrier film. A heat dissipation fin may be provided on the heat dissipation body.

    摘要翻译: 将硅芯片安装在散热体的一部分上,并将载体膜插入到树脂组合物材料中。 硅芯片的每个输入/输出电极部分电连接到载体膜的每个引线上。 硅芯片和电路基板之间的电连接由载体膜进行。 散热体的另一部分露出在树脂组合物材料的表面上。 用于固定树脂组合物材料的固定装置与树脂组合物材料或散热体一体地形成。 树脂组合物材料通过固定装置固定到电路基板。 树脂组合物材料和电路基板之间的机械固定由与载体膜分开的固定装置进行。 散热片可以设置在散热体上。

    Printed circuit board
    60.
    发明授权
    Printed circuit board 有权
    印刷电路板

    公开(公告)号:US08373072B2

    公开(公告)日:2013-02-12

    申请号:US12501931

    申请日:2009-07-13

    IPC分类号: H05K1/03

    摘要: A printed circuit board includes a ground layer, a power source layer, a signal wiring layer, an insulating layer and an electromagnetic radiation suppressing member. The power source layer is provided to be opposed to the ground layer. The signal wiring layer transmits a signal in a predetermined frequency domain. The insulating layer insulates the ground layer, the power source layer and the signal wiring layer from one another. The electromagnetic radiation suppressing member is provided to cover a circumferential edge of the insulating layer. The electromagnetic radiation suppressing member has a negative dielectric constant and a positive magnetic permeability in a frequency domain including the predetermined frequency domain.

    摘要翻译: 印刷电路板包括接地层,电源层,信号布线层,绝缘层和电磁辐射抑制构件。 电源层设置成与接地层相对。 信号布线层发送预定频域的信号。 绝缘层使接地层,电源层和信号布线层彼此绝缘。 电磁辐射抑制构件被设置成覆盖绝缘层的周缘。 电磁辐射抑制构件在包括预定频域的频域中具有负介电常数和正磁导率。