公开(公告)号：US10374121B2

公开(公告)日：2019-08-06

申请号：US15774960

申请日：2016-11-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, a component includes a semiconductor layer sequence including a first main side, a first layer, an active layer, a second layer and a second main side, a first contact element arranged on the second main side filling a recess in the semiconductor layer sequence, wherein the recess extends from the second main side through the second layer and the active layer and opens out into the first layer and a second contact element arranged on the second main side, the second contact element being arranged laterally next to the recess in a plan view of the second main side, wherein the first contact element comprises a first transparent intermediate layer, a metallic first mirror layer and a metallic injection element.

公开(公告)号：US20190229240A1

公开(公告)日：2019-07-25

申请号：US16256897

申请日：2019-01-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Sophia Huppmann ,  Andrea Winnerl ,  Jens Müller

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00

Abstract: An optoelectronic device and a method are disclosed. In an embodiment an optoelectronic device includes a semiconductor body having a layer sequence with an active region configured to generate radiation, a first dielectric layer arranged on the layer sequence having a plurality of first areas and a second area, a first contact via in each area of the plurality of first areas for contacting a first side of the active region, a second contact via in the second area for contacting a second side of the active region and a conductive layer comprising a plurality of first regions and a second region surrounding the plurality of first regions and electrically isolated from the plurality of first regions, the conductive layer having a substantially planar surface and being arranged planar onto the plurality of first areas and the second area such that each of the plurality of first regions of the conductive layer is in contact with the first contact via in the respective area of the plurality of first areas and the second region of the conductive layer is in contact with the second contact via of the first dielectric layer.

公开(公告)号：US20190013434A1

公开(公告)日：2019-01-10

申请号：US15775817

申请日：2017-02-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer ,  Isabel Otto

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

Abstract: A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer.

公开(公告)号：US20190013351A1

公开(公告)日：2019-01-10

申请号：US16065000

申请日：2017-01-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L27/15 ,  H01L33/38 ,  F21S41/141 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L27/156 ,  F21S41/141 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62

Abstract: An optoelectronic component, a lighting apparatus and a car headlight are disclosed. In an embodiment an optoelectronic component includes a radiation side having a plurality of pixels arranged next to each other and a contact side, opposite of the radiation side, having a plurality of first contact structures, wherein a length of each pixel is greater than a width of the pixel, wherein the first contact structures are electrically contacted individually and independently of each other during operation, wherein each pixel is electrically uniquely associated with a first contact structure, and wherein, for each pixel and a pixel directly adjacent thereto, the two first contact structures of these two pixels are arranged differently with respect to the associated pixels so that a translation, which images the pixel in the directly adjacent pixel, does not image the two associated first contact structures congruently into each other.

公开(公告)号：US09947838B2

公开(公告)日：2018-04-17

申请号：US15297336

申请日：2016-10-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Martin Mandl

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/58

CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

公开(公告)号：US20170200861A1

公开(公告)日：2017-07-13

申请号：US15315376

申请日：2015-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Norwin von Malm

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes a semiconductor layer sequence having a bottom face and a top face, wherein the semiconductor layer sequence comprises a first layer of a first conductivity type, an active layer for generating electromagnetic radiation, and a second layer of a second conductivity type and a bottom contact element located at the bottom face and a top contact element located at the top face for injecting current into the semiconductor layer sequence. The chip further includes a current distribution element located at the bottom face, the current distribution element distributes current along the bottom face during operation and a plurality of vias extending from the current distribution element through the first layer and through the active layer into the semiconductor layer sequence, wherein the vias are not in direct electrical contact with the active layer.

公开(公告)号：US09691815B2

公开(公告)日：2017-06-27

申请号：US14434760

申请日：2013-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Koelper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/24 ,  H01L25/075 ,  H01L33/18 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

公开(公告)号：US20170040500A1

公开(公告)日：2017-02-09

申请号：US15100062

申请日：2015-01-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Brittaö Göötz ,  Ion Stoll ,  Alexander F. Pfeuffer ,  Dominik Scholz ,  lsabel Otto

IPC: H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  C23F1/14 ,  C23F1/02

CPC classification number: H01L33/502 ,  C23C28/00 ,  C23C28/32 ,  C23C28/345 ,  C23F1/02 ,  C23F1/14 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L33/504 ,  H01L2933/0041

Abstract: A method for producing a laterally structured phosphor layer and an optoelectronic component comprising such a phosphor layer are disclosed. In an embodiment the method includes providing a carrier having a first electrically conductive layer at a carrier top side, applying an insulation layer to the first electrically conductive layer and a second electrically conductive layer to the insulation layer, etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is maintained as a continuous layer. The method further includes applying a voltage to the first electrically conductive layer and electrophoretically coating the first electrically conductive layer with a first material, and applying a voltage to the second electrically conductive layer and electrophoretically coating the second electrically conductive layer with a second material.

Abstract translation: 公开了一种用于制造横向结构的荧光体层的方法和包含这种磷光体层的光电子部件。 在一个实施例中，该方法包括提供在载体顶侧具有第一导电层的载体，向第一导电层施加绝缘层，向绝缘层施加第二导电层，蚀刻第二导电层和 绝缘层，其中第一导电层保持为连续层。 该方法还包括向第一导电层施加电压并用第一材料电泳涂覆第一导电层，以及向第二导电层施加电压并用第二材料电泳涂覆第二导电层。

公开(公告)号：US20150270458A1

公开(公告)日：2015-09-24

申请号：US14428333

申请日：2013-09-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Lutz Höppel ,  Alexander F. Pfeuffer

IPC: H01L33/56 ,  H01L33/60

CPC classification number: H01L33/56 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/405 ,  H01L33/44 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.

Abstract translation: 公开了一种光电半导体芯片。 光电子半导体芯片包括具有适于发射辐射的有源区的半导体层序列，载体衬底和镜像层，镜层布置在半导体层序列和载体衬底之间，其中半导体层序列被细分为 多个有源区域彼此并排布置，其中多个有源区域在每种情况下都分别由半导体层序列中的沟槽分开，其中沟槽在每种情况下都分开半导体层序列和镜面层，其中 镜层具有面向沟槽的侧表面和面向半导体芯片的外侧的侧表面，其中面对半导体芯片的外侧的镜面层的侧表面具有金属封装层。

公开(公告)号：US20150243850A1

公开(公告)日：2015-08-27

申请号：US14420883

申请日：2013-08-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L33/46 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/32 ,  H01L31/0232

CPC classification number: H01L33/46 ,  H01L31/02327 ,  H01L31/03044 ,  H01L31/18 ,  H01L33/32 ,  H01L2933/0025

Abstract: A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component comprises a semiconductor body having a main surface and a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the minor region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains.

Abstract translation: 公开了一种制造光电子半导体部件和光电半导体部件的方法。 在一个实施例中，该部件包括半导体本体，其具有至少区域上具有与半导体本体的主表面邻接的主表面和反射镜区域，其中该次要区域具有多个第一材料组成的区域，该区域与 彼此相邻并邻接主表面，其中所述镜区域包括第二材料组合物的连续镜层，并且其中所述镜层至少在所述域之间区域邻接所述主表面。