公开(公告)号：US09054200B2

公开(公告)日：2015-06-09

申请号：US13856452

申请日：2013-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66742

Abstract: Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm3 and lower than or equal to 2.63 g/cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins/cm3 or less in electron spin resonance.

Abstract translation: 改善使用氧化物半导体的半导体器件的电特性。 此外，制造其中电特性随时间变化或由于具有光照射的门BT应力测试而导致的电特性变化小的高度可靠的半导体器件。 晶体管包括栅电极，与其间具有栅绝缘膜的栅电极的一部分重叠的氧化物半导体膜和与氧化物半导体膜接触的一对电极。 栅极绝缘膜是其膜密度高于或等于2.26g / cm 3且低于或等于2.63g / cm 3的绝缘膜，并且具有ag值为2.001的信号的自旋密度为2×1015自旋/ cm3 或更少的电子自旋共振。

公开(公告)号：US08901556B2

公开(公告)日：2014-12-02

申请号：US13795770

申请日：2013-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/34 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。

公开(公告)号：US08860022B2

公开(公告)日：2014-10-14

申请号：US13862716

申请日：2013-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi ,  Yusuke Nonaka ,  Yasuharu Hosaka

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

Abstract translation: 一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

公开(公告)号：US12087825B2

公开(公告)日：2024-09-10

申请号：US18243850

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/622 ,  C23C14/08 ,  C23C14/58 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  C03C2217/23 ,  C03C2218/151 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US11842901B2

公开(公告)日：2023-12-12

申请号：US17843083

申请日：2022-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L29/786 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L21/385 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/518

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US11830950B2

公开(公告)日：2023-11-28

申请号：US17346359

申请日：2021-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Junichi Koezuka ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L27/146 ,  H01L29/66 ,  H01L27/15 ,  H01L29/45 ,  H01L27/12 ,  H10B12/00 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L21/76843 ,  H01L21/76856 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/146 ,  H01L27/15 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H10B12/312 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/088

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

公开(公告)号：US11757041B2

公开(公告)日：2023-09-12

申请号：US17830376

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/78606 ,  G02F1/1368 ,  G02F1/13394 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1251 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/1213

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20210343843A1

公开(公告)日：2021-11-04

申请号：US17370221

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58 ,  H01L29/778 ,  H01L29/786 ,  H01L27/12 ,  C04B35/453 ,  C04B35/622

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10886143B2

公开(公告)日：2021-01-05

申请号：US16787110

申请日：2020-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L21/00 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/51

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US10741414B2

公开(公告)日：2020-08-11

申请号：US15584223

申请日：2017-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L21/477 ,  H01L21/02 ,  H01L21/28 ,  H01L29/786 ,  H01L29/24

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.