公开(公告)号：US06919282B2

公开(公告)日：2005-07-19

申请号：US10337724

申请日：2003-01-08

申请人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

发明人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

IPC分类号： H01L21/318 ,  G02B27/01 ,  H01L21/336 ,  H01L29/76 ,  H01L29/786 ,  H01L21/31

CPC分类号： H01L27/1259 ,  G02B27/017 ,  G02F1/133345 ,  G02F1/1362 ,  G02F2202/103 ,  G02F2202/105 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.

摘要翻译： 使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜 （图1A中的1004）。 氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。 可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。 此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。 栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

公开(公告)号：US06706648B2

公开(公告)日：2004-03-16

申请号：US10037865

申请日：2001-10-24

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C03C17/245 ,  C03C2218/1525 ,  C03C2218/153 ,  C23C16/402 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属被改善。

公开(公告)号：US06281147B1

公开(公告)日：2001-08-28

申请号：US09457128

申请日：1999-12-07

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

IPC分类号： H01L2131

CPC分类号： H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/31612

摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （形成膜时的输出值）（放电后）（O 2等离子体生成后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

公开(公告)号：US06228751B1

公开(公告)日：2001-05-08

申请号：US08706667

申请日：1996-09-06

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L27108

CPC分类号： H01L29/66757 ,  H01L29/78612 ,  Y10S438/974

摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。

公开(公告)号：US5079031A

公开(公告)日：1992-01-07

申请号：US324669

申请日：1989-03-17

申请人： Shunpei Yamazaki ,  Shinji Imatou ,  Noriya Ishida ,  Mari Sasaki ,  Mitsunori Sakama ,  Takeshi Fukada ,  Naoki Hirose ,  Mitsunori Tsuchiya ,  Atsushi Kawano ,  Kazuhisa Nakashita ,  Junichi Takeyama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Shinji Imatou ,  Noriya Ishida ,  Mari Sasaki ,  Mitsunori Sakama ,  Takeshi Fukada ,  Naoki Hirose ,  Mitsunori Tsuchiya ,  Atsushi Kawano ,  Kazuhisa Nakashita ,  Junichi Takeyama ,  Toshiji Hamatani

IPC分类号： C23C16/517 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32568 ,  H01J2237/3321

摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

公开(公告)号：US4945226A

公开(公告)日：1990-07-31

申请号：US263367

申请日：1988-10-27

申请人： Takeshi Fukuda ,  Nobumitsu Amachi ,  Mitsunori Sakama ,  Naoya Sakamoto ,  Shunpei Yamazaki

发明人： Takeshi Fukuda ,  Nobumitsu Amachi ,  Mitsunori Sakama ,  Naoya Sakamoto ,  Shunpei Yamazaki

IPC分类号： H01L31/0248 ,  G09G3/14 ,  H01L27/146 ,  H01L31/02 ,  H03K17/94

CPC分类号： H01L31/02016 ,  H03K17/941

摘要： A photosensing system is described. Light rays to be sensed is incident on a photosensitive semiconductor device which allows much current to pass therethrough during receiving the incident light and which passes a little current when there is no incident light. The current passing through the semiconductor device is accumulated in a suitable storage means. The accumulated charge is detected, in order to judge the existence or the absence of the incident light, a certain time period after the pulsed signal is outputted.

摘要翻译： 描述了感光系统。 要感测的光线入射到光敏半导体器件上，该光敏半导体器件在接收入射光时允许许多电流通过，并且当没有入射光时通过一点电流。 通过半导体器件的电流被积累在合适的存储装置中。 检测出累积电荷，以便在输出脉冲信号之后的某个时间段内判断入射光的存在或不存在。

公开(公告)号：US4691995A

公开(公告)日：1987-09-08

申请号：US885662

申请日：1986-07-15

申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Kaoru Koyanagi ,  Shinji Imato ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Kaoru Koyanagi ,  Shinji Imato ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

IPC分类号： G02F1/1341 ,  G02F1/13

CPC分类号： G02F1/1341 ,  G02F2001/13415 ,  Y10S359/90

摘要： An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between the substrates, the liquid crystal spreads at high temperature.

摘要翻译： 示出了改进的液晶填充装置。 在将液晶与另一基板接合的基板之前，将液晶滴在基板上，然后将另一基板在压力下叠加在基板上。 在基板之间夹杂，液晶在高温下扩散。

公开(公告)号：US07393723B2

公开(公告)日：2008-07-01

申请号：US10793909

申请日：2004-03-08

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L29/78612 ,  Y10S438/974

摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。

公开(公告)号：US07372114B2

公开(公告)日：2008-05-13

申请号：US11544593

申请日：2006-10-10

申请人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

发明人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

IPC分类号： H01L29/94 ,  H01L31/062

CPC分类号： H01L27/1259 ,  G02B27/017 ,  G02F1/133345 ,  G02F1/1362 ,  G02F2202/103 ,  G02F2202/105 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.

摘要翻译： 使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜 （图1A中的1004）。 氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。 可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。 此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。 栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

公开(公告)号：US20070173046A1

公开(公告)日：2007-07-26

申请号：US11727257

申请日：2007-03-26

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。