Plasma processing method
    52.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号:US06350497B1

    公开(公告)日:2002-02-26

    申请号:US09616989

    申请日:2000-07-14

    IPC分类号: H05H124

    摘要: For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.

    摘要翻译: 为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性,等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体 通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成,蚀刻或表面改性,其中多个圆柱形基板以等间隔放置 并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。

    Semiconductor memory device and method for fabricating the same
    53.
    发明授权
    Semiconductor memory device and method for fabricating the same 失效
    半导体存储器件及其制造方法

    公开(公告)号:US06238966B1

    公开(公告)日:2001-05-29

    申请号:US09379857

    申请日:1999-08-24

    IPC分类号: H01L2972

    CPC分类号: H01L28/56

    摘要: A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the stoichiometric composition, and an upper electrode. And a charge-storable dielectric film is made up of the high-dielectric-constant layer and the low-leakage-current layer. Such a BST film containing a larger number of Ti atoms than that defined by stoichiometry can suppress the leakage current to a larger degree. Also, if such a film is used, then the relative dielectric constant does not decrease so much as a BST film with the stoichiometric composition. Accordingly, the leakage current can be suppressed while minimizing the decrease in relative dielectric constant of the entire charge-storable dielectric film, which is a serial connection of capacitors, thus contributing to the downsizing of a semiconductor memory device. As a result, a semiconductor memory device, including a charge-storable dielectric film with decreased leakage current and enhanced charge storability, can be obtained.

    摘要翻译: 由BST的含量偏离其化学计量组成的BST制成的低漏电流层插入由具有化学计量组成的BST制成的高介电常数层和上电极之间。 并且电荷存储电介质膜由高介电常数层和低漏电流层构成。 这样含有比化学计量定义的Ti原子数更多的BST膜可以更大程度地抑制漏电流。 此外,如果使用这样的膜,则相对介电常数不会像具有化学计量组成的BST膜那么多地降低。 因此,可以抑制泄漏电流,同时最小化作为电容器的串联连接的整个电荷存储电介质膜的相对介电常数的降低,从而有助于半导体存储器件的小型化。 结果,可以获得包括具有降低的漏电流和增强的电荷存储性的电荷存储电介质膜的半导体存储器件。

    Video cassette auto changer
    57.
    发明授权
    Video cassette auto changer 失效
    录像带自动更换

    公开(公告)号:US4802035A

    公开(公告)日:1989-01-31

    申请号:US38311

    申请日:1987-04-14

    申请人: Takashi Ohtsuka

    发明人: Takashi Ohtsuka

    IPC分类号: G11B15/68

    CPC分类号: G11B15/6835

    摘要: An automatic cassette loading and transferring apparatus for use with at least one reproducing unit which is arranged between two housing blocks adjacent the reproducing unit, in which the housing blocks each hold a plurality of cassettes. The cassette transfer device has inlets facing the two cassette housing blocks for transferring the cassettes back and forth between the blocks, as well as to the reproducing unit. The cassette transferring device has at least one cassette receiving portion formed therein with two inlets and includes transport means capable of carrying in and carrying out a cassette from both of the cassette receiving portions in either direction and includes a cassette push-out element used to push out a cassette housed in each of the receiving portions in either the forward or rear facing directions relative to the two cassette housing blocks. A bar code detector is provided on a movable mounting for scanning an identification code on a cassette and is also movable to either inlet entrance of the cassette receiving portion to accommodate cassettes entering from either side.

    摘要翻译: 一种用于与至少一个再现单元一起使用的自动盒式磁带装载和传送装置,所述再现单元布置在与再现单元相邻的两个壳体块之间,其中壳体块各自容纳多个盒。 盒式传送装置具有面向两个盒壳体块的入口,用于在盒之间来回传送盒以及再现单元。 盒式传送装置具有形成有两个入口的至少一个盒接收部分,并且包括能够从两个盒接收部分沿任一方向承载和执行盒的传送装置,并且包括用于推动的盒推出元件 在相对于两个盒壳体块的前进或后退方向上,收纳在每个接收部分中的盒。 条形码检测器设置在用于扫描盒上的识别码的可移动安装件上,并且还可移动到盒接收部分的任一入口入口以适应从两侧进入的盒。

    Fuel cell in which proton conductive gel is used and manufacturing method thereof, and electric power generation method
    59.
    发明授权
    Fuel cell in which proton conductive gel is used and manufacturing method thereof, and electric power generation method 有权
    使用质子传导性凝胶的燃料电池及其制造方法以及发电方法

    公开(公告)号:US07964319B2

    公开(公告)日:2011-06-21

    申请号:US12794266

    申请日:2010-06-04

    IPC分类号: H01M8/08

    摘要: An object of the present invention is to provide a fuel cell that operates in a temperature range of not lower than 100° C., and a method for manufacturing such a fuel cell.The fuel cell of the present invention has a proton conductive gel, an anode electrode, and a cathode electrode, the proton conductor being sandwiched between the anode electrode and the cathode electrode, in which the proton conductive gel is composed of SnO2, NH3, H2O, and H3PO4, and provided that the molar ratio represented by NH3/SnO2 is X, and the molar ratio represented by P/Sn is Y, X is not less than 0.2 and not greater than 5, and Y is not less than 1.6 and not greater than 3.

    摘要翻译: 本发明的目的在于提供一种在不低于100℃的温度范围内工作的燃料电池及其制造方法。 本发明的燃料电池具有质子传导性凝胶,阳极电极和阴极电极,质子导体夹在阳极电极和阴极电极之间,其中质子传导性凝胶由SnO 2,NH 3,H 2 O 和H 3 PO 4,并且假定由NH 3 / SnO 2表示的摩尔比为X,并且由P / Sn表示的摩尔比为Y,X不小于0.2且不大于5,Y不小于1.6,并且 不大于3。

    Semiconductor device and method for fabricating the same
    60.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07834419B2

    公开(公告)日:2010-11-16

    申请号:US11522982

    申请日:2006-09-19

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.

    摘要翻译: 半导体器件包括通过在衬底上连续堆叠下电极,电容器电介质膜和上电极而形成的电容器。 下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层,并且电容器电介质膜形成为与下部电极的第二导电层接触 电极。