公开(公告)号：US09852893B2

公开(公告)日：2017-12-26

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

公开(公告)号：US09668332B2

公开(公告)日：2017-05-30

申请号：US15069385

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H05H3/02

CPC classification number: H05H3/02

Abstract: Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

公开(公告)号：US09530621B2

公开(公告)日：2016-12-27

申请号：US14288572

申请日：2014-05-28

Applicant: Tokyo Electron Limited

Inventor： Peter L. G. Ventzek ,  Lee Chen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/3222

Abstract: This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source.

Abstract translation: 本公开涉及一种等离子体处理系统，其可以使用单个电源组件来生成使用相同物理硬件的电感耦合等离子体（ICP）和表面波等离子体。 电源组件可以包括天线板，其可以包括用于射频（RF）电源的ICP线圈和用作微波源的缝隙天线的导电材料。

公开(公告)号：US20160293388A1

公开(公告)日：2016-10-06

申请号：US15089011

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Colin Campbell ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32807

Abstract: A plasma processing system for performing a plasma processing application includes a plasma processing chamber, first and second electrodes residing in the plasma processing chamber, and a pneumatic counterbalance system operatively connected to the first electrode. The pneumatic counterbalance system is configured to support and maintain a position of the first electrode during a plasma processing application for gap control. A drive assembly separate from the pneumatic counterbalance system is configured to move the first electrode with respect to the second electrode in the plasma processing chamber for gap adjustment.

Abstract translation: 用于执行等离子体处理应用的等离子体处理系统包括等离子体处理室，位于等离子体处理室中的第一和第二电极以及可操作地连接到第一电极的气动平衡系统。 气动平衡系统构造成在用于间隙控制的等离子体处理应用期间支撑并保持第一电极的位置。 与气动平衡系统分离的驱动组件被配置为相对于等离子体处理室中的第二电极移动第一电极，用于间隙调节。

公开(公告)号：US09431218B2

公开(公告)日：2016-08-30

申请号：US14209695

申请日：2014-03-13

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: H05B39/00 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32422 ,  H01J37/32596

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract translation: 描述了用等离子体处理衬底的方法。 特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极 。 该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合​​到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体， 并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。

公开(公告)号：US09396955B2

公开(公告)日：2016-07-19

申请号：US13834690

申请日：2013-03-15

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Iwao Toshihiko ,  Peter L. G. Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3065 ,  C23C16/511 ,  H01J37/32

CPC classification number: H01L21/3065 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32256

Abstract: A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Abstract translation: 等离子调谐杆系统设置有一个或多个微波空腔，其被配置为通过在等离子体内和/或邻近等离子体内的一个或多个等离子体调谐杆中产生共振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体 。 一个或多个微波空腔组件可以耦合到处理室，并且可以包括一个或多个调谐空间/空腔。 每个调谐空间/空腔可以具有耦合到其上的一个或多个等离子体调谐杆。 等离子体调谐杆可以被配置为将EM能量从谐振腔耦合到处理室内的处理空间，从而在处理空间内产生均匀的等离子体。

公开(公告)号：US20160056018A1

公开(公告)日：2016-02-25

申请号：US14932057

申请日：2015-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 在一个实施例中，等离子体密度可以通过在处理期间降低离子到室壁的离子速率来控制。 这可以包括偏置等离子体室中的双电极环组件以改变室壁区域和体积等离子体区域之间的电位差。

公开(公告)号：US09209032B2

公开(公告)日：2015-12-08

申请号：US14206518

申请日：2014-03-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 在一个实施例中，等离子体密度可以通过在处理期间降低离子到室壁的离子速率来控制。 这可以包括偏置等离子体室中的双电极环组件以改变室壁区域和体积等离子体区域之间的电位差。

公开(公告)号：US20140263182A1

公开(公告)日：2014-09-18

申请号：US13837391

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Radha Sundararajan

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32706

Abstract: A method of selectively activating a chemical process using a DC pulse etcher. A processing chamber includes a substrate therein for chemical processing. The method includes coupling energy into a process gas within the processing chamber so as to produce a plasma containing positive ions. A pulsed DC bias is applied to the substrate, which is positioned on a substrate support within the processing chamber. Periodically, the substrate is biased between first and second bias levels, wherein the first bias level is more negative than the second bias level. When the substrate is biased to the first bias level, mono-energetic positive ions are attracted from plasma toward the substrate, the mono-energetic positive ions being selective so as to enhance a selected chemical etch process.

Abstract translation: 使用DC脉冲蚀刻器选择性地激活化学处理的方法。 处理室包括用于化学处理的基板。 该方法包括将能量耦合到处理室内的处理气体中，以产生含有正离子的等离子体。 将脉冲DC偏压施加到基板，该基板位于处理室内的基板支撑件上。 周期性地，衬底在第一和第二偏置电平之间被偏置，其中第一偏置电平比第二偏置电平更负。 当衬底被偏置到第一偏置电平时，单能正离子从等离子体吸引到衬底，单能正离子是选择性的，以便增强选择的化学蚀刻工艺。

公开(公告)号：US20140262042A1

公开(公告)日：2014-09-18

申请号：US14204887

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract translation: 公开了一种处理系统，其具有具有内部空腔的动力传递元件，该内部空腔将电磁能量靠近内腔中的连续狭缝传播。 连续狭缝在内腔和衬底处理室之间形成开口。 电磁能可以在连续狭缝中产生交替电荷，使得能够产生可以传播到处理室中的电场。 电场可以与处理室中的处理气体相互作用，以产生用于处理衬底的等离子体。 内部空腔可以通过覆盖连续狭缝的电介质部件与处理室隔离。 动力传递元件可以用于控制处理室内的等离子体密度，或者通过其自身或与其它等离子体源组合来控制等离子体密度。