公开(公告)号：US09214587B2

公开(公告)日：2015-12-15

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/02 ,  H01L31/05 ,  H01L31/046

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。

公开(公告)号：US09087950B2

公开(公告)日：2015-07-21

申请号：US12788862

申请日：2010-05-27

申请人： Shunpei Yamazaki ,  Yukie Suzuki ,  Kazuo Nishi

发明人： Shunpei Yamazaki ,  Yukie Suzuki ,  Kazuo Nishi

IPC分类号： H01L31/18 ,  H01L31/042 ,  H01L31/076 ,  B60T1/10 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/0687 ,  H01L31/043

CPC分类号： H01L31/076 ,  B60T1/10 ,  H01L31/03685 ,  H01L31/03926 ,  H01L31/043 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0687 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： A multi-junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided.

摘要翻译： 提供可以通过简单的方法制造的多结光电转换装置。 此外，提供了机械强度提高而不使制造过程复杂化的光电转换装置。 光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和包括纤维体的结构体，其将第一单元和第二单元彼此牢固地连接并电连接。 因此，可以确保其中半导体接头串联连接并且在p-i-n结之间具有足够的电连接的多结光电转换装置。

公开(公告)号：US08455753B2

公开(公告)日：2013-06-04

申请号：US11324491

申请日：2006-01-04

申请人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： H01L31/00

CPC分类号： G04C10/02 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

摘要翻译： 本发明的目的是使太阳能电池中的电极最小化以最小化太阳能电池。 本发明提供一种太阳能电池的制造方法，包括以下步骤：在基板上形成第一电极层，在第一电极层上形成光电转换层，在光电转换层上形成有机层，形成开口到达 第一电极层，并且通过用导电膏填充开口形成第二电极层，其中有机层改性光电转换层的表面，并且导电糊和光电转换之间的接触角变得更大 。 根据本发明，通过在光电转换层的表面上形成有机层，可以降低光电转换层的润湿性。 由此，可以使电极层和绝缘隔离层变薄。

公开(公告)号：US20120104862A1

公开(公告)日：2012-05-03

申请号：US13281479

申请日：2011-10-26

申请人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

发明人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

IPC分类号： H02J1/00

CPC分类号： H02S40/32 ,  H02J1/10 ,  H02J3/383 ,  Y02E10/563 ,  Y10T307/707

摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

摘要翻译： 光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。 此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。 此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。 此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。 另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

公开(公告)号：US08039782B2

公开(公告)日：2011-10-18

申请号：US11829709

申请日：2007-07-27

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US07919779B2

公开(公告)日：2011-04-05

申请号：US12369802

申请日：2009-02-12

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

公开(公告)号：US07495272B2

公开(公告)日：2009-02-24

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L31/113

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

摘要翻译： 可以减少由光传感器元件占据的面积，并且可以在有限的区域中集成多个元件，使得传感器元件可以具有更高的输出和更小的尺寸。 通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶硅膜）的TFT的输出放大器电路来实现更高的输出和小型化，其被用作 在塑料膜基材上的能够抵抗诸如焊料回流工艺的安装过程中的温度的有源层。 可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US07352044B2

公开(公告)日：2008-04-01

申请号：US10542147

申请日：2004-01-16

申请人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

发明人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31/00

CPC分类号： H01L31/0264 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

摘要翻译： 太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。 针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。 在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。

公开(公告)号：US20060157105A1

公开(公告)日：2006-07-20

申请号：US11324491

申请日：2006-01-04

申请人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： H01L31/00

CPC分类号： G04C10/02 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

公开(公告)号：US20060049478A1

公开(公告)日：2006-03-09

申请号：US10542147

申请日：2004-01-16

申请人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

发明人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31/105 ,  H01L31/06 ,  H01L31/00

CPC分类号： H01L31/0264 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

摘要翻译： 太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。 针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。 在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。