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103 条记录 (耗时 0.035 秒)

    Photoelectric conversion device and fabrication method thereof
    2.
    发明授权
    Photoelectric conversion device and fabrication method thereof 失效
    光电转换装置及其制造方法

    公开(公告)号：US08704083B2

    公开(公告)日：2014-04-22

    申请号：US13022827

    申请日：2011-02-08

    申请人： Shunpei Yamazaki ,  Kazuo Nishi

    发明人： Shunpei Yamazaki ,  Kazuo Nishi

    IPC分类号： H01L31/075

    CPC分类号： H01L31/182 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/028 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/077 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

    摘要： In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

    摘要翻译： 在通过使用固相生长法添加催化剂元素制造的薄膜光电转换元件中，抑制诸如电流的短路或泄漏的缺陷。 促进硅结晶的催化剂材料选择性地添加到形成在具有一种导电类型的第一硅半导体层上的第二硅半导体层中，第二硅半导体层通过热处理部分结晶，具有导电性的第三硅半导体层 与一种导电类型相反的类型堆叠，并且在不添加催化剂材料的第二硅半导体层中的区域处进行元件隔离，从而防止左催化剂材料再次扩散，并且缺陷如 抑制电流的短路或泄漏。

    Solar cell and semiconductor device, and manufacturing method thereof
    5.
    发明授权
    Solar cell and semiconductor device, and manufacturing method thereof 有权
    太阳能电池和半导体器件及其制造方法

    公开(公告)号：US08455753B2

    公开(公告)日：2013-06-04

    申请号：US11324491

    申请日：2006-01-04

    申请人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

    发明人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

    IPC分类号： H01L31/00

    CPC分类号： G04C10/02 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

    摘要翻译： 本发明的目的是使太阳能电池中的电极最小化以最小化太阳能电池。 本发明提供一种太阳能电池的制造方法，包括以下步骤：在基板上形成第一电极层，在第一电极层上形成光电转换层，在光电转换层上形成有机层，形成开口到达 第一电极层，并且通过用导电膏填充开口形成第二电极层，其中有机层改性光电转换层的表面，并且导电糊和光电转换之间的接触角变得更大 。 根据本发明，通过在光电转换层的表面上形成有机层，可以降低光电转换层的润湿性。 由此，可以使电极层和绝缘隔离层变薄。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08415664B2

    公开(公告)日：2013-04-09

    申请号：US13271272

    申请日：2011-10-12

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

    PHOTOELECTRIC CONVERSION DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换器件

    公开(公告)号：US20120104862A1

    公开(公告)日：2012-05-03

    申请号：US13281479

    申请日：2011-10-26

    申请人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

    发明人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

    IPC分类号： H02J1/00

    CPC分类号： H02S40/32 ,  H02J1/10 ,  H02J3/383 ,  Y02E10/563 ,  Y10T307/707

    摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

    摘要翻译： 光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。 此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。 此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。 此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。 另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

    Optical sensor device and electronic apparatus with an amplifier circuit and dual level shift circuit
    8.
    发明授权
    Optical sensor device and electronic apparatus with an amplifier circuit and dual level shift circuit 有权
    光电传感器和电子设备，具有放大电路和双电平移位电路

    公开(公告)号：US08039782B2

    公开(公告)日：2011-10-18

    申请号：US11829709

    申请日：2007-07-27

    申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

    发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

    IPC分类号： H01J40/14

    CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

    摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

    摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

    Semiconductor device and electronic appliance using the same
    10.
    发明授权
    Semiconductor device and electronic appliance using the same 有权
    半导体器件和使用该器件的电子设备

    公开(公告)号：US07531784B2

    公开(公告)日：2009-05-12

    申请号：US11790482

    申请日：2007-04-25

    申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

    发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

    IPC分类号： H01J40/14

    CPC分类号： G01J1/44 ,  H01L27/14609 ,  H04N5/35518 ,  H04N5/374

    摘要： An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.

    摘要翻译： 本发明的目的是提供一种能够在不扩大输出电压或输出电流的范围的情况下检测更宽范围的照度的光电转换装置。 光电转换装置具有光电转换元件，该光电转换元件包括光电转换元件和与该光电转换元件电连接的放大器电路;以及偏置切换单元，用于反转施加于光电转换元件的偏压。 使用偏置开关单元来反映施加到光电转换装置的偏置，由此光电转换装置可以在不扩大输出电压或输出电流的范围的情况下检测更宽的照度范围。