公开(公告)号：US20180082822A1

公开(公告)日：2018-03-22

申请号：US15825021

申请日：2017-11-28

申请人： Lam Research Corporation

发明人： Michael C. Kellogg ,  Alexei Marakhtanov ,  John Patrick Holland ,  Zhigang Chen ,  Felix Kozakevich ,  Kenneth Lucchesi

IPC分类号： H01J37/32 ,  H01J37/147

CPC分类号： H01J37/32155 ,  H01J37/1471 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32642

摘要： Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

公开(公告)号：US20180040458A1

公开(公告)日：2018-02-08

申请号：US15788166

申请日：2017-10-19

申请人： Semes Co., Ltd

发明人： Hyungchul MOON ,  Hyung Joon KIM

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01J37/32871 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67069

摘要： Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

公开(公告)号：US09812297B2

公开(公告)日：2017-11-07

申请号：US14159535

申请日：2014-01-21

申请人： Tokyo Electron Limited

发明人： Keita Kanbara ,  Naoyuki Satoh ,  Takuya Ishikawa

IPC分类号： H01J37/32

CPC分类号： H01J37/32642

摘要： A heat transfer sheet affixing method where a focus ring is pressed by a pressing part to a heat transfer sheet placed on a heat transfer sheet mounting part of a plasma processing apparatus to affix the heat transfer sheet to the focus ring. The method includes reducing a pressure to place the heat transfer sheet in a reduced-pressure atmosphere, heating the heat transfer sheet, and pressing the focus ring by the pressing part to the heat transfer sheet. The reducing, the heating, and the pressing are performed concurrently at least for a predetermined period of time.

公开(公告)号：US20170221684A1

公开(公告)日：2017-08-03

申请号：US15484264

申请日：2017-04-11

申请人： TOKYO ELECTRON LIMITED

发明人： Masaru NISHINO ,  Takao FUNAKUBO ,  Shinichi KOZUKA ,  Ryosuke NIITSUMA ,  Tsutomu ITO

IPC分类号： H01J37/32 ,  B08B7/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and includes at least one of a transition metal and a base metal, by plasma of a processing gas, wherein the processing gas includes Ar gas and a CHzFw gas, and does not includes a chlorine-based gas and a nitrogen-based gas. The deposit is removed by the plasma of the processing gas while applying a negative DC voltage to the member within the processing vessel, and the negative DC voltage is set to be equal to or less than −100V such that argon ions in the plasma of the processing gas collide with the member within the processing vessel and the deposit is removed by sputtering of the argon ions.

公开(公告)号：US09711364B2

公开(公告)日：2017-07-18

申请号：US14147201

申请日：2014-01-03

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Daniel Kwadwo Amponsah Berkoh ,  Elena Becerra Woodard ,  Dean G. Scott

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/306 ,  H01L21/683 ,  H01L21/768

CPC分类号： H01L21/3065 ,  H01J37/32642 ,  H01L21/30621 ,  H01L21/6835 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68381

摘要： Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.

公开(公告)号：US20170076924A1

公开(公告)日：2017-03-16

申请号：US15260190

申请日：2016-09-08

申请人： APPLIED MATERIALS, INC.

发明人： William JOHANSON ,  Kirankumar SAVANDAIAH

IPC分类号： H01J37/34 ,  C23C14/54 ,  H01J37/32 ,  C23C14/35

CPC分类号： H01J37/3441 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.

摘要翻译： 本文提供了处理套件屏蔽和结合相同处理室的实施例。 在一些实施例中，被配置用于处理具有给定直径的基板的处理室中的一件式处理套件屏蔽包括：具有上部和下部的圆柱体; 设置在所述上​​部内的环状传热通道; 以及覆盖环部分，其从所述下部部分径向向内延伸并且具有从所述盖环部分的底表面延伸的环形腿部，其中所述环形腿部被配置为与沉积环相互接合以在所述底部表面和 沉积环。

公开(公告)号：US20170018411A1

公开(公告)日：2017-01-19

申请号：US15067068

申请日：2016-03-10

申请人： Lam Research Corporation

发明人： Saravanapriyan Sriraman ,  Tom A. Kamp ,  Alexander Paterson

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01J37/32697 ,  H01J37/3211 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32642 ,  H01J37/32715

摘要： An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.

摘要翻译： 提供了一种用于等离子体处理室的边缘环组件，包括：边缘环，其构造成围绕静电卡盘（ESC），所述静电卡盘被配置为电连接到第一RF电源，所述ESC具有用于支撑基板的顶表面， 围绕所述顶表面的环形台阶，所述环形台阶限定出比所述顶表面低的环形搁板; 环形电极，设置在所述环形台阶的下方并位于所述环形搁架的上方; 设置在所述环形电极下方的绝缘环，用于将所述环形电极与所述ESC隔离，所述介电环位于所述环形台架上的所述环形台阶中; 以及多个绝缘连接器，其经由所述ESC并且通过所述介质环设置，所述多个绝缘连接器中的每一个提供第二RF电源和所述环形电极之间的电连接。

公开(公告)号：US20170011891A1

公开(公告)日：2017-01-12

申请号：US15276423

申请日：2016-09-26

申请人： Applied Materials, Inc.

发明人： Edward P. HAMMOND, IV ,  Jing ZOU ,  Rodolfo P. BELEN ,  Meihua SHEN ,  Nicolas GANI ,  Andrew NGUYEN ,  David PALAGASHVILI ,  Michael D. WILLWERTH

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01J37/32642 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68735

摘要： A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

摘要翻译： 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。

公开(公告)号：US20160365261A1

公开(公告)日：2016-12-15

申请号：US15174091

申请日：2016-06-06

申请人： Lam Research Corporation

发明人： Sanket SANT

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/68721

摘要： An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. An edge ring is on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. At least one electrode provides RF power into the processing chamber.

摘要翻译： 提供了一种用于处理衬底的设备。 提供处理室。 用于支撑衬底的衬底支撑件在处理室内。 边缘环在衬底支撑件上，其中边缘环包括无氮掺杂石英，其具有AlO和YO的掺杂剂或LaO的掺杂剂。 用于向处理室提供气体的气体入口位于衬底的表面之上。 至少一个电极向处理室提供RF功率。

公开(公告)号：US20160322205A1

公开(公告)日：2016-11-03

申请号：US15207495

申请日：2016-07-11

申请人： Advanced Micro-Fabrication Equipment Inc, Shanghai

发明人： Songlin XU ,  Gang SHI ,  Tuqiang NI

IPC分类号： H01J37/32 ,  H01L21/31 ,  H01L21/3065

CPC分类号： H01J37/32633 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31

摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.

摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部并且位于基板支撑件上方但位于多个气体注入器下方，以便重新定向处理气体的流动。