公开(公告)号：US20090261299A1

公开(公告)日：2009-10-22

申请号：US12404740

申请日：2009-03-16

申请人： Takashi WATANABE ,  Ryuji Takeda

发明人： Takashi WATANABE ,  Ryuji Takeda

IPC分类号： H01B1/04

CPC分类号： H01L21/3225 ,  C30B25/20 ,  C30B29/06 ,  C30B31/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/3221

摘要： A silicon wafer which has DZ layers formed on both sides thereof by heat treatment in an atmosphere of reducing gas (such as hydrogen) or rare gas (such as argon) with a specific temperature profile for heating, holding, and cooling, and which also has a gettering site of BMD in the bulk inside the DZ layer. A silicon wafer which has a silicon epitaxial layer formed on one side thereof. The DZ layer and the silicon epitaxial layer contain dissolved oxygen introduced into their surface parts, with the concentration and distribution of dissolved oxygen properly controlled. Introduction of oxygen into the surface part is accomplished by heat treatment and ensuing rapid cooling in an atmosphere of oxygen-containing gas.

摘要翻译： 通过在还原性气体（例如氢气）或稀有气体（例如氩气）的气氛中进行热处理，具有用于加热，保持和冷却的特定温度特性，在其两侧形成DZ层的硅晶片，并且还 在DZ层内有大量的BMD吸气点。 硅晶片，其一侧形成硅外延层。 DZ层和硅外延层含有引入其表面部分的溶解氧，适当控制溶解氧的浓度和分布。 将氧气引入表面部分是通过热处理实现的，并且随后在含氧气体的气氛中快速冷却。

公开(公告)号：US20090210166A1

公开(公告)日：2009-08-20

申请号：US10586445

申请日：2005-01-27

申请人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

发明人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

IPC分类号： G06F19/00

CPC分类号： C30B15/206 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.

摘要翻译： 通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率 在硅单晶中进行热处理的同时测定硅单晶。 此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

公开(公告)号：US20090209085A1

公开(公告)日：2009-08-20

申请号：US12308990

申请日：2007-06-08

申请人： Akihiko Tamura ,  Konomu Oki

发明人： Akihiko Tamura ,  Konomu Oki

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/3223 ,  H01L21/3225

摘要： The present invention provides a method for reusing a delaminated wafer, which is a method for applying reprocessing that is at least polishing to a delaminated wafer 17 byproduced when manufacturing an SOI wafer based on an ion implantation delamination method and thereby again reusing the delaminated wafer 17 as a bond wafer 21 in an SOI wafer manufacturing process, wherein, at least, a CZ wafer 11 used as the bond wafer is a low-defect wafer whose entire surface is formed of an N region, and an RTA treatment is carried out in the reprocessing with respect to the delaminated wafer 17 at a higher temperature than a temperature in formation of a thermal oxide film 12 performed with respect to the bond wafer in the SOI wafer manufacturing process. As a result, there can be provided the method for reusing a delaminated wafer which does not induce a bonding failure or a reduction in quality of an SOI layer even if the delaminated wafer byproduced when the CZ wafer having a large diameter of 200 mm or above is used as the bond wafer to fabricate the SOI wafer based on the ion implantation delamination method is repeatedly reused as the bond wafer.

摘要翻译： 本发明提供了一种重新使用分层晶片的方法，其是通过在基于离子注入分层方法制造SOI晶片时通过产生的至少抛光到再分散晶片17的再处理方法，从而再次使用分层晶片17 作为SOI晶片制造工艺中的接合晶片21，其中，至少用作接合晶片的CZ晶片11是整个表面由N区形成的低缺陷晶片，并且RTA处理在 相对于分解晶片17在相对于SOI晶片制造工艺中的接合晶片执行的热氧化膜12的形成温度以上的温度下的再处理。 其结果是，即使在大直径为200mm以上的CZ晶片发生剥离的晶片时，也可以提供不会引起SOI层的接合不良或质量降低的剥离晶片的再利用方法 用作接合晶片以制造SOI晶圆为基础的离子注入分层方法被反复重复使用作为接合晶片。

公开(公告)号：US20090189159A1

公开(公告)日：2009-07-30

申请号：US12020930

申请日：2008-01-28

申请人： Darwin Enicks ,  Mark Good ,  John Chaffee

发明人： Darwin Enicks ,  Mark Good ,  John Chaffee

IPC分类号： H01L29/04 ,  H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/3225 ,  H01L21/3226 ,  H01L29/78

摘要： Disclosed herein are devices, methods and systems for implementing gettering layers. Devices including gettering layers can be implemented such that a gettering layer doped with carbon, boron, fluorine or any other appropriate impurity is formed on a semiconductor substrate, a device layer is formed on the gettering layer, and a device region is formed in the device layer having a depth that maintains a distance in the device layer between the gettering layer and the device region.

摘要翻译： 本文公开了用于实现吸气层的装置，方法和系统。 可以实现包括吸气层的装置，使得在半导体衬底上形成掺杂有碳，硼，氟或任何其它合适杂质的吸杂层，在吸气层上形成器件层，器件区形成在器件区 层具有在吸气层和器件区域之间在器件层中保持距离的深度。

公开(公告)号：US07563319B2

公开(公告)日：2009-07-21

申请号：US10524778

申请日：2003-12-19

申请人： Shigeru Umeno ,  Masataka Hourai ,  Masakazu Sano ,  Shinichiro Miki

发明人： Shigeru Umeno ,  Masataka Hourai ,  Masakazu Sano ,  Shinichiro Miki

IPC分类号： H01L21/324

CPC分类号： H01L21/2605 ,  C30B29/06 ,  C30B33/005 ,  H01L21/261 ,  H01L21/3225 ,  H01L21/76254 ,  Y10S117/916

摘要： An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]≦2.123×1021exp(−1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

摘要翻译： 在氧化气氛中对有源层侧硅晶片进行热处理，从而在其中形成掩埋氧化膜。 然后将有源层侧硅晶片与所述掩埋氧化物膜接合在支撑侧晶片上，由此制造SOI晶片。 所述氧化热处理在满足以下公式的条件下进行：<？in-line-formula description =“In-line formula”end =“lead”？> [Oi] <= 2.123×1016exp（-1.035 / k T + 273）），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中，T是热处理的温度，[Oi（atmos / cm3） 间质氧浓度。

公开(公告)号：US07521381B2

公开(公告)日：2009-04-21

申请号：US10432861

申请日：2001-11-28

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/3225

摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

摘要翻译： 将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在 较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

公开(公告)号：US20090061140A1

公开(公告)日：2009-03-05

申请号：US11887244

申请日：2006-02-14

申请人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

发明人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

IPC分类号： B32B3/02 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B33/02 ,  H01L21/3225 ,  Y10T428/21

摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

摘要翻译： 一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火的晶片是必需的，并且确保产生作为大量吸收源的BMD，以便稳定质量 退火晶片。 考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。 或者，退火后通过抛光减少SSD。

公开(公告)号：US20090017291A1

公开(公告)日：2009-01-15

申请号：US11661724

申请日：2005-08-30

申请人： Shinsuke Sadamitsu ,  Masataka Hourai

发明人： Shinsuke Sadamitsu ,  Masataka Hourai

IPC分类号： B32B5/00 ,  H01L21/205

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3225 ,  H01L27/146 ,  H01L31/186 ,  Y02P70/521 ,  Y10T428/265

摘要： A silicon epitaxial wafer of the invention comprises a silicon single crystal wafer sliced from a CZ silicon ingot doped with carbon in a concentration range of not less than 5×1015 atoms/cm3 and not more than 5×1017 atoms/cm3 and an epitaxial layer consisting of a silicon single crystal epitaxially grown on a front surface of the silicon single crystal wafer. A polycrystalline silicon layer having a thickness of not less than 0.5 μm and not more than 1.5 μm is formed on a back surface of the silicon single crystal wafer.

摘要翻译： 本发明的硅外延晶片包括从掺杂有不少于5×10 15原子/ cm 3且不大于5×10 17原子/ cm 3的浓度的碳的CZ硅锭切片的硅单晶晶片和由硅构成的外延层 在硅单晶晶片的正面上外延生长的单晶。 在硅单晶晶片的背面形成厚度不小于0.5μm且不大于1.5μm的多晶硅层。

公开(公告)号：US20090004426A1

公开(公告)日：2009-01-01

申请号：US11771667

申请日：2007-06-29

申请人： Robert J. Falster ,  Luca Moiraghi ,  DongMyun Lee ,  Chanrae Cho ,  Marco Ravani

发明人： Robert J. Falster ,  Luca Moiraghi ,  DongMyun Lee ,  Chanrae Cho ,  Marco Ravani

IPC分类号： B32B3/02 ,  C30B33/06

CPC分类号： H01L21/3225 ,  Y10T428/21

摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.

摘要翻译： 本发明一般涉及一种通过将现有的氧簇和沉淀物溶解在衬底中来抑制具有重掺杂硅衬底和轻掺杂N掺杂硅外延层的外延硅晶片中的氧沉淀的方法。 此外，在随后的氧沉淀热处理时，防止形成氧析出物。

公开(公告)号：US20080135988A1

公开(公告)日：2008-06-12

申请号：US11636144

申请日：2006-12-07

申请人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

发明人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

IPC分类号： H01L29/30 ,  H01L21/322

CPC分类号： H01L29/32 ,  H01L21/3225

摘要： Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.

摘要翻译： 本发明的各种实施例涉及用于处理诸如硅晶片的半导体衬底的系统，器件和方法，以便减少其中的漏电。 半导体衬底设置有多个加热处理，其产生与衬底的表面相邻的剥离区域和在剥离区域下方的芯区域。 通过氧气扩散热处理去除了裸露区域内的氧杂质。 通过附聚热处理和宏观生长热处理的组合，在芯区内产生多个宏观体微小缺陷。 这多个宏观的大块微缺陷抑制了位于衬底内的金属污染物的迁移。 为了示例的目的，描述了以三个处理的顺序加热的半导体晶片的某些实施例。 每个处理具有其中基板被加热的温度范围和处理发生的相关时间范围。