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公开(公告)号:US20180151215A1
公开(公告)日:2018-05-31
申请号:US15785918
申请日:2017-10-17
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Richard E. Perego
IPC: G11C11/406 , G06F12/00 , G06F13/16
CPC classification number: G11C11/406 , G06F12/00 , G06F13/1605 , G11C11/40603
Abstract: Described are dynamic memory systems that perform overlapping refresh and data access (read or write) transactions that minimize the impact of the refresh transaction on memory performance. The memory systems support independent and simultaneous activate and precharge operations directed to different banks. Two sets of address registers enable the system to simultaneously specify different banks for refresh and data-access transactions.
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公开(公告)号:US20180139843A1
公开(公告)日:2018-05-17
申请号:US15814180
申请日:2017-11-15
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan
IPC: H05K1/11 , G06F13/40 , G11C11/4093 , G11C11/408 , G06F13/16 , G06F1/18 , G06F15/78 , H05K1/18 , G11C5/06 , G11C5/04 , G11C7/10
CPC classification number: H05K1/11 , G06F1/184 , G06F13/1694 , G06F13/4068 , G06F15/7803 , G11C5/04 , G11C5/06 , G11C7/10 , G11C11/4082 , G11C11/4093 , H05K1/181 , H05K2201/10159 , H05K2201/10189
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.
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公开(公告)号:US20180122444A1
公开(公告)日:2018-05-03
申请号:US15798136
申请日:2017-10-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely K. Tsern , Brian S. Leibowitz , Wayne Frederick Ellis , Akash Bansal , John Welsford Brooks , Kishore Ven Kasamsetty
CPC classification number: G11C8/18 , G06F13/161 , G06F13/1647 , G06F13/1657 , G06F13/4234 , G11C5/02 , G11C5/04 , G11C7/10 , G11C7/1072 , G11C29/023 , G11C29/028 , G11C2207/2254
Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.
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公开(公告)号:US20180082725A1
公开(公告)日:2018-03-22
申请号:US15665312
申请日:2017-07-31
Applicant: Rambus Inc.
Inventor: Bret Stott , Frederick A. Ware , Ian P. Shaeffer , Yuanlong Wang
CPC classification number: G11C7/222 , G06F13/1689 , G11C7/02 , G11C7/22
Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.
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公开(公告)号:US09875151B2
公开(公告)日:2018-01-23
申请号:US15341959
申请日:2016-11-02
Applicant: Rambus Inc.
Inventor: Yuanlong Wang , Frederick A. Ware
CPC classification number: G06F11/0727 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/073 , G06F11/0751 , G06F11/076 , G06F11/0793 , G06F11/10 , G06F11/1004 , G06F11/1008 , G06F11/1044 , G06F11/1068 , G06F11/1402 , G06F13/4286 , H03M13/09 , H03M13/29 , H03M13/2906 , H03M13/611 , H04L1/0003 , H04L1/0008 , H04L1/0061 , H04L1/08 , H04L1/1867 , H04L2001/0093
Abstract: A controller includes a link interface that is to couple to a first link to communicate bi-directional data and a second link to transmit unidirectional error-detection information. An encoder is to dynamically add first error-detection information to at least a portion of write data. A transmitter, coupled to the link interface, is to transmit the write data. A delay element is coupled to an output from the encoder. A receiver, coupled to the link interface, is to receive second error-detection information corresponding to at least the portion of the write data. Error-detection logic is coupled to an output from the delay element and an output from the receiver. The error-detection logic is to determine errors in at least the portion of the write data by comparing the first error-detection information and the second error-detection information, and, if an error is detected, is to assert an error condition.
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公开(公告)号:US09847248B2
公开(公告)日:2017-12-19
申请号:US14272295
申请日:2014-05-07
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely K. Tsern , Ian P. Shaeffer
IPC: H01L21/768 , H01L25/065
CPC classification number: H01L21/768 , H01L25/0657 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/16145 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/00014 , H01L2924/10253 , H01L2924/00
Abstract: Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.
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公开(公告)号:US09837132B2
公开(公告)日:2017-12-05
申请号:US15024454
申请日:2014-09-24
Applicant: RAMBUS INC.
Inventor: Frederick A. Ware , Suresh Rajan
CPC classification number: G11C7/1063 , G11C5/04 , G11C5/063 , G11C7/10 , G11C7/1072 , G11C29/025 , G11C29/028
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory module includes multiple device sites coupled to the a data query (DQ) buffer component via data lines and coupled to a command and address (CA) buffer component via chip select (CS) lines. A first number of the CS lines between the CA buffer component and any combination of two or more of the multiple device sites is greater than a second number of the CS lines between the CA buffer component and a single one of the multiple device sites.
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公开(公告)号:US09836348B2
公开(公告)日:2017-12-05
申请号:US15250677
申请日:2016-08-29
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern
IPC: G06F11/10 , G06F11/16 , G11C29/42 , G11C29/44 , G11C7/10 , G11C29/52 , H03M13/15 , G06F11/20 , G11C29/00
CPC classification number: G06F11/1044 , G06F11/1048 , G06F11/1068 , G06F11/1666 , G06F11/20 , G11C7/10 , G11C29/42 , G11C29/4401 , G11C29/52 , G11C29/70 , G11C29/765 , G11C2029/4402 , H03M13/1575
Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.
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公开(公告)号:US09830971B2
公开(公告)日:2017-11-28
申请号:US15242425
申请日:2016-08-19
Applicant: Rambus Inc.
Inventor: Frederick A. Ware
IPC: G11C7/22 , G11C11/4076 , G06F13/16 , G06F13/42 , G11C8/18 , G11C7/10 , G06F1/10 , G11C11/409
CPC classification number: G11C11/4076 , G06F1/10 , G06F13/1689 , G06F13/4243 , G11C7/1072 , G11C7/22 , G11C8/18 , G11C11/409 , G11C2207/2254
Abstract: A clock signal is transmitted to first and second integrated circuit (IC) components via a clock signal line, the clock signal having a first arrival time at the first IC component and a second, later arrival time at the second IC component. A write command is transmitted to the first and second IC components to be sampled by those components at respective times corresponding to transitions of the clock signal, and write data is transmitted to the first and second IC components in association with the write command. First and second strobe signals are transmitted to the first and second IC components, respectively, to time reception of the first and second write data in those components. The first and second strobe signals are selected from a plurality of phase-offset timing signals to compensate for respective timing skews between the clock signal and the first and second strobe signals.
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公开(公告)号:US20170337144A1
公开(公告)日:2017-11-23
申请号:US15525379
申请日:2015-11-11
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern , John Eric Linstadt , Thomas J. Giovannini , Craig E. Hampel , Scott C. Best , John Yan
IPC: G06F13/16
CPC classification number: G06F13/1678 , G06F13/1673 , G06F13/1694
Abstract: Described are motherboards with memory-module sockets that accept legacy memory modules for backward compatibility, or accept a greater number of configurable modules in support of increased memory capacity. The configurable modules can be backward compatible with legacy motherboards. Equipped with the configurable modules, the motherboards support memory systems with high signaling rates and capacities.
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