公开(公告)号：US20130344677A1

公开(公告)日：2013-12-26

申请号：US13531780

申请日：2012-06-25

Applicant: Bruce B. Doris ,  Kangguo Cheng ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Arvind Kumar ,  Shom Ponoth

Inventor： Bruce B. Doris ,  Kangguo Cheng ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Arvind Kumar ,  Shom Ponoth

IPC: H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/76283

Abstract: Shallow trench isolation structures are provided for use with UTBB (ultra-thin body and buried oxide) semiconductor substrates, which prevent defect mechanisms from occurring, such as the formation of electrical shorts between exposed portions of silicon layers on the sidewalls of shallow trench of a UTBB substrate, in instances when trench fill material of the shallow trench is subsequently etched away and recessed below an upper surface of the UTBB substrate.

公开(公告)号：US20130341754A1

公开(公告)日：2013-12-26

申请号：US13531654

申请日：2012-06-25

Applicant: Bruce B. Doris ,  Kangguo Cheng ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Arvind Kumar ,  Shom Ponoth

Inventor： Bruce B. Doris ,  Kangguo Cheng ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Arvind Kumar ,  Shom Ponoth

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/76283

Abstract: Shallow trench isolation structures are provided for use with UTBB (ultra-thin body and buried oxide) semiconductor substrates, which prevent defect mechanisms from occurring, such as the formation of electrical shorts between exposed portions of silicon layers on the sidewalls of shallow trench of a UTBB substrate, in instances when trench fill material of the shallow trench is subsequently etched away and recessed below an upper surface of the UTBB substrate.

公开(公告)号：US20130328124A1

公开(公告)日：2013-12-12

申请号：US13489537

申请日：2012-06-06

Applicant: Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

Inventor： Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

IPC: H01L27/06 ,  H01L21/8238

CPC classification number: H01L21/8238 ,  H01L21/265 ,  H01L21/77 ,  H01L21/823835 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/42364 ,  H01L29/7391 ,  H01L29/861

Abstract: A semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided source, a silicided drain and a silicided HiK gate stack. The semiconductor structure eliminates a cap removal RIE in a gate first High-K metal gate flow from the region of the gated-diode. The lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow. The absence of the cap removal RIE is beneficial in that diffusions of the diode are not subjected to the cap removal RIE, which avoids damage and allows retaining its highly ideal junction characteristics.

Abstract translation: 一种半导体结构，其具有多个具有硅化阳极（p掺杂区域）和阴极（n掺杂区域）的门控二极管和由非硅化栅极材料制成的高K栅极堆叠，该门控二极管相邻 其中每一个具有硅化源，硅化物漏极和硅化HiK栅极叠层。 半导体结构消除了栅极第一高K金属栅极流从栅极二极管的区域流出的帽去除RIE。 优选在栅极第一工艺流程期间，在二极管的栅极上缺少硅化物和存在氮化物阻挡层。 没有帽去除RIE是有益的，因为二极管的扩散不经受帽去除RIE，这避免了损伤并且允许保持其高度理想的结特性。

公开(公告)号：US08482075B2

公开(公告)日：2013-07-09

申请号：US13468270

申请日：2012-05-10

Applicant: Hasan M. Nayfeh ,  Andres Bryant ,  Arvind Kumar ,  Nivo Rovedo ,  Robert Robison

Inventor： Hasan M. Nayfeh ,  Andres Bryant ,  Arvind Kumar ,  Nivo Rovedo ,  Robert Robison

IPC: H01L21/70

CPC classification number: H01L21/26586 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/66659

Abstract: A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.

Abstract translation: 在基板上形成多个栅极结构。 每个栅极结构包括第一栅极电极和源极和漏极区域。 从每个栅极结构去除第一栅电极。 施加第一光致抗蚀剂以在源向下方向上阻挡具有源极区的栅极结构。 在栅极结构中进行第一光晕注入，其栅源结构的源极区域在源极方向上以第一角度。 去除第一光致抗蚀剂。 施加第二光致抗蚀剂以阻挡在源向上方向上具有源极区的栅极结构。 在栅极结构中进行第二光晕注入，其栅源结构的源极区域以源向下方向为第二角度。 去除第二光致抗蚀剂。 在每个栅极结构中形成替代栅电极。

公开(公告)号：US08432034B2

公开(公告)日：2013-04-30

申请号：US13115545

申请日：2011-05-25

Applicant: Eric Vance Kline ,  Michael Robert Rasmussen ,  Arvind Kumar Sinha

Inventor： Eric Vance Kline ,  Michael Robert Rasmussen ,  Arvind Kumar Sinha

IPC: H01L23/48 ,  H01L21/00

CPC classification number: H01L23/498 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10155 ,  H01L2224/10165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/3436 ,  H05K2201/068 ,  H05K2201/10553 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014

Abstract: An embodiment is directed to an IC mounting assembly that comprises an IC device having a first planar surface, wherein multiple electrically conductive first terminals are located at the first surface. The assembly further comprises an IC device mounting platform having a second planar surface in closely spaced relationship with the first surface, wherein multiple electrically conductive second terminals are located at the second surface, each second terminal corresponding to one of the first terminals. A solder element extends between each first terminal and its corresponding second terminal, and a constraining element is fixably joined to the second surface, wherein the constraining element has a CTE which is selectively less than the CTE of the mounting platform at the second surface. The constraining element is provided with a number of holes or apertures, and each hole is traversed by a solder element that extends between a first terminal and its corresponding second terminal.

Abstract translation: 一个实施例涉及一种IC安装组件，其包括具有第一平面表面的IC器件，其中多个导电第一端子位于第一表面。 组件还包括具有与第一表面紧密隔开的第二平坦表面的IC器件安装平台，其中多个导电第二端子位于第二表面处，每个第二端子对应于第一端子之一。 焊料元件在每个第一端子和其对应的第二端子之间延伸，并且约束元件可固定地接合到第二表面，其中约束元件具有选择性地小于第二表面处的安装平台的CTE的CTE。 约束元件设置有多个孔或孔，并且每个孔由在第一端子和其相应的第二端子之间延伸的焊料元件横越。

公开(公告)号：US20130060813A1

公开(公告)日：2013-03-07

申请号：US13224231

申请日：2011-09-01

Applicant: Eric Alan Eckberg ,  Eric Vance Kline ,  Paul N. Krystek ,  Nathan Carl Mandelko ,  Michael Robert Rasmussen ,  Arvind Kumar Sinha ,  Stephen M. Zins

Inventor： Eric Alan Eckberg ,  Eric Vance Kline ,  Paul N. Krystek ,  Nathan Carl Mandelko ,  Michael Robert Rasmussen ,  Arvind Kumar Sinha ,  Stephen M. Zins

IPC: G06F17/30

CPC classification number: G06Q10/0833 ,  G06F21/35 ,  G06F21/6209 ,  G06F2221/2101

Abstract: A method, programmed medium and system are disclosed which provide increased secure tracking of materials and products through the use of a unique coding scheme. The coding scheme contains a unique security code identifier issued by a sole certification agency, and includes a non-coded scheme for public information, and a coded scheme for private information regarding the sourcing and development of materials and products. The disclosure provides for full tracking of a product throughout the supply chain by only certified participants. The disclosed system allows for increased secure tracking of materials and products, and allows for access to greater amounts of information at various stages of manufacture and/or assembly regarding a given material or product.

Abstract translation: 公开了一种通过使用唯一编码方案提供对材料和产品的安全跟踪的方法，编程介质和系统。 编码方案包含由唯一的认证机构签发的唯一的安全代码标识符，并且包括用于公开信息的非编码方案，以及关于材料和产品的采购和开发的私人信息的编码方案。 本披露提供了只有认证参与者在整个供应链中完全跟踪产品。 所公开的系统允许增加对材料和产品的安全跟踪，​​并允许在关于给定材料或产品的制造和/或组装的各个阶段获得更多量的信息。

公开(公告)号：US20130037595A1

公开(公告)日：2013-02-14

申请号：US13546974

申请日：2012-07-11

Applicant: Arvind Kumar Gupta ,  Nikhil R. Katre ,  Kiran Garikipati ,  Sekar Perumal ,  Rajesh T. Shelke ,  Cinish P. Varghese ,  Richard Roland Bueno

Inventor： Arvind Kumar Gupta ,  Nikhil R. Katre ,  Kiran Garikipati ,  Sekar Perumal ,  Rajesh T. Shelke ,  Cinish P. Varghese ,  Richard Roland Bueno

IPC: A61B17/068

CPC classification number: A61B17/064 ,  A61B17/0643 ,  A61B17/068 ,  A61B17/0682 ,  A61B17/0684 ,  A61B17/0686 ,  A61B17/07207 ,  A61B2017/0023 ,  A61B2017/00464 ,  A61B2017/00473 ,  A61B2017/00619 ,  A61B2017/00659 ,  A61B2017/00668 ,  A61B2017/0688 ,  A61B2017/07257 ,  A61B2090/08021 ,  A61B2090/0814 ,  A61B2560/0285

Abstract: A surgical fastener applying apparatus includes an anvil half-section and a cartridge-receiving half-section including an elongated channel member having a pair of opposed openings defined through sidewalls thereof. A disposable assembly including a single use loading unit and a single use firing unit is configured to be releasably supported within the cartridge-receiving half-section. The disposable assembly includes a stationary housing for supporting the firing unit which includes a distal extension for supporting the single use loading unit. The stationary housing includes a pair of flared tabs configured to be releasably received within the openings of the cartridge-receiving half-section to releasably engage the disposable assembly within the cartridge-receiving half-section.

Abstract translation: 外科紧固件施加装置包括砧座半部分和药筒接收半部分，其包括细长通道部件，该细长通道部件具有通过其侧壁限定的一对相对的开口。 包括单次使用装载单元和单次使用的点火单元的一次性组件构造成可释放地支撑在盒接收半部分内。 一次性组件包括用于支撑击发单元的固定壳体，其包括用于支撑单用装载单元的远侧延伸部。 固定壳体包括一对张开的突出部，其构造成可释放地容纳在药筒接收半部分的开口内，以可释放地接合药筒接收半部分内的一次性组件。

公开(公告)号：US08343781B2

公开(公告)日：2013-01-01

申请号：US12886612

申请日：2010-09-21

Applicant: Arvind Kumar ,  Anthony I-Chih Chou ,  Shreesh Narasimha

Inventor： Arvind Kumar ,  Anthony I-Chih Chou ,  Shreesh Narasimha

IPC: G01R31/26 ,  H01L21/66

CPC classification number: H01L23/544 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain.

Abstract translation: 公开了一种用于电气掩模检查的装置和方法。 在两个金属层和通孔层之间形成扫描链。 三层之一是被测功能层，另外两层是测试层。 使用扫描链的电阻测量来确定在包括扫描链的通孔或金属段之一内是否存在潜在缺陷。

公开(公告)号：US08292052B2

公开(公告)日：2012-10-23

申请号：US12822232

申请日：2010-06-24

Applicant: Adnan Kutubuddin Bohori ,  Ajith Kuttannair Kumar ,  Bret Dwayne Worden ,  James William Bray ,  Somakumar Ramachandrapanicker ,  Arvind Kumar Tiwari ,  Suma Memana Narayana Bhat

Inventor： Adnan Kutubuddin Bohori ,  Ajith Kuttannair Kumar ,  Bret Dwayne Worden ,  James William Bray ,  Somakumar Ramachandrapanicker ,  Arvind Kumar Tiwari ,  Suma Memana Narayana Bhat

IPC: B60L9/00 ,  H01F38/00

CPC classification number: B60L5/005 ,  B60L7/16 ,  B60L11/1812 ,  B60L11/182 ,  B60L2200/26 ,  B60M1/36 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/122 ,  Y02T90/127 ,  Y02T90/14

Abstract: A contactless power transfer system for a mobile asset is presented. The system includes a primary loop disposed adjacent to a location that is coupled to a power source. A secondary receiving coil is disposed on the mobile asset and coupled to a traction motor for receiving power from the primary loop. The power transfer system further includes a field-focusing element that can focus a magnetic field from the primary loop onto the secondary receiving coil, the field-focusing element having a non-linear current distribution.

Abstract translation: 提出了一种用于移动资产的非接触式电力传输系统。 该系统包括邻近与电源耦合的位置设置的主回路。 次级接收线圈设置在移动资产上并且耦合到牵引电动机以从主回路接收电力。 电力传送系统还包括场聚焦元件，该场聚焦元件可将来自初级环的磁场聚焦到次级接收线圈上，该场聚焦元件具有非线性电流分布。

公开(公告)号：US20120239348A1

公开(公告)日：2012-09-20

申请号：US13047200

申请日：2011-03-14

Applicant: Arijit Banerjee ,  Rupam Mukherjee ,  Arvind Kumar Tiwari ,  Somakumar Ramachandrapanicker ,  Srilatha Boyanapally ,  Paul Lloyd Flynn ,  Ajith Kuttannair Kumar

Inventor： Arijit Banerjee ,  Rupam Mukherjee ,  Arvind Kumar Tiwari ,  Somakumar Ramachandrapanicker ,  Srilatha Boyanapally ,  Paul Lloyd Flynn ,  Ajith Kuttannair Kumar

IPC: G06F19/00

CPC classification number: F02D29/06 ,  B60W20/50 ,  F01D15/10 ,  F02D2041/1432 ,  F02D2041/288 ,  F02D2200/1002 ,  G01M13/025 ,  G05B23/0224 ,  H02P21/20 ,  H02P23/14 ,  H02P29/0241

Abstract: A method of monitoring health of a mechanical drive train is provided. The method includes obtaining voltage and current signals from at least one phase of an electrical machine coupled with the mechanical drive train. The method also includes representing the electrical machine having a non-sinusoidal flux distribution as a combination of a plurality of harmonic order sinusoidally distributed virtual electrical machines based on the obtained voltage and current signals. The method further includes determining a torque profile associated with one or more combinations of the sinusoidally distributed virtual electrical machines. Finally, the method includes detecting the presence of an anomaly in the mechanical drive train based on the torque profile or spectrum.

Abstract translation: 提供了一种监测机械传动系的健康的方法。 该方法包括从与机械传动系连接的电机的至少一个相位获得电压和电流信号。 该方法还包括基于获得的电压和电流信号将具有非正弦通量分布的电机表示为多个谐波阶正弦分布式虚拟电机的组合。 该方法还包括确定与正弦分布的虚拟电机的一个或多个组合相关联的转矩曲线。 最后，该方法包括基于扭矩分布或频谱检测机械传动系中异常的存在。