公开(公告)号：US20060172484A1

公开(公告)日：2006-08-03

申请号：US11341553

申请日：2006-01-30

Applicant: Suk-Jin Chung ,  Jung-Hee Chung ,  Jong-Cheol Lee ,  Jin-Yong Kim ,  Kwang-Hee Lee

Inventor： Suk-Jin Chung ,  Jung-Hee Chung ,  Jong-Cheol Lee ,  Jin-Yong Kim ,  Kwang-Hee Lee

IPC: H01L21/8242

CPC classification number: H01L21/02175 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31683 ,  H01L21/321 ,  H01L27/1085 ,  H01L28/60

Abstract: In a method of forming a thin layer and a method of manufacturing a flash memory and a capacitor using the same, a first thin layer may be formed on a substrate, and the thin layer may include one of metal, metal nitride and a combination thereof. A binding inhibitor may be formed on the first thin layer by a surface treatment on the first thin layer. The binding inhibitor may reduce a bonding strength between first and second elements when a second thin layer is formed on the first thin layer in a subsequent process using a precursor including the first element and the second element having a ligand binding to the first element. In a flash memory, the first and second thin layers may be a floating gate and a dielectric layer, respectively, and in a capacitor, the first and second thin layers may be a lower electrode and a dielectric layer, respectively.

Abstract translation: 在形成薄层的方法和使用其制造闪速存储器和电容器的方法中，可以在衬底上形成第一薄层，并且薄层可以包括金属，金属氮化物及其组合之一 。 可以通过在第一薄层上的表面处理在第一薄层上形成结合抑制剂。 当使用包含第一元素的前体和具有与第一元素结合的配体的第二元素的随后的方法中，在第一薄层上形成第二薄层时，结合抑制剂可以降低第一和第二元素之间的结合强度。 在闪速存储器中，第一和第二薄层可以分别是浮动栅极和电介质层，并且在电容器中，第一和第二薄层可以分别是下部电极和介电层。

公开(公告)号：US06459637B1

公开(公告)日：2002-10-01

申请号：US09895196

申请日：2001-06-29

Applicant: Kwang-Jin Lee ,  Jong-Cheol Lee

Inventor： Kwang-Jin Lee ,  Jong-Cheol Lee

IPC: G11C700

CPC classification number: G11C29/02 ,  G11C7/06 ,  G11C7/1045 ,  G11C2207/2254

Abstract: An apparatus for controlling an enable of a sense amplifier in a semiconductor memory device includes a test part for repeatedly varying a test code value until the enable of the sense amplifier has a zero margin with respect to data to be read by the sense amplifier, and for determining the test code value at a time point when the enable has the zero margin. A fuse array cuts a fuse corresponding to the determined test code value.

Abstract translation: 一种用于控制半导体存储器件中的读出放大器的使能的装置包括用于重复地改变测试代码值的测试部件，直到读出放大器的使能相对于读出放大器要读取的数据为止为止，以及 用于在启用具有零余量的时间点确定测试代码值。 保险丝阵列切断与确定的测试代码值对应的保险丝。

公开(公告)号：US5670546A

公开(公告)日：1997-09-23

申请号：US584025

申请日：1996-01-11

Applicant: No-Sang Park ,  Young-Sik Jung ,  Churl-Min Seong ,  Jong-Cheol Lee ,  Jin-Il Choi ,  Seung-Won Choi ,  Yeon-Joo Choi ,  Kwang-Sook Lee

Inventor： No-Sang Park ,  Young-Sik Jung ,  Churl-Min Seong ,  Jong-Cheol Lee ,  Jin-Il Choi ,  Seung-Won Choi ,  Yeon-Joo Choi ,  Kwang-Sook Lee

IPC: C07D295/08 ,  A61K31/16 ,  A61K31/165 ,  A61K31/325 ,  A61P25/04 ,  A61P29/00 ,  C07C231/02 ,  C07C235/34 ,  C07C235/60 ,  C07C271/16 ,  C07D207/06 ,  C07D207/325 ,  C07D241/04 ,  C07D295/092

CPC classification number: C07D295/088 ,  C07C235/34 ,  C07C235/60 ,  C07C271/16

Abstract: N-arylalkylphenylacetamide compounds of formula (I), and pharmaceutically acceptable salts thereof, possess potent analgesic and anti-inflammatory activities. ##STR1##

Abstract translation: 式（I）的N-芳基烷基苯基乙酰胺化合物及其药学上可接受的盐具有有效的镇痛和抗炎活性。 （一）

公开(公告)号：US09076647B2

公开(公告)日：2015-07-07

申请号：US13459136

申请日：2012-04-28

Applicant: Suk-jin Chung ,  Youn-soo Kim ,  Cha-young Yoo ,  Jong-cheol Lee ,  Sang-yeol Kang

Inventor： Suk-jin Chung ,  Youn-soo Kim ,  Cha-young Yoo ,  Jong-cheol Lee ,  Sang-yeol Kang

IPC: H01L21/31 ,  H01L21/02 ,  H01L27/108 ,  H01L27/115 ,  H01L49/02 ,  H01L29/66 ,  H01L21/28 ,  H01L29/792

CPC classification number: H01L21/02178 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28282 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/91 ,  H01L29/66795 ,  H01L29/7926

Abstract: A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.

Abstract translation: 一种形成氧化物层的方法。 该方法包括：在基板的表面上形成反应抑制性官能团层; 在反应抑制官能团的层上形成金属或半导体的前体层; 以及氧化金属或半导体的前体以获得金属氧化物或半导体氧化物的层。 根据该方法，可以形成具有高厚度均匀性的氧化物层，并且可以制造具有优异电特性的半导体器件。

公开(公告)号：US08969188B2

公开(公告)日：2015-03-03

申请号：US13326700

申请日：2011-12-15

Applicant: Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

Inventor： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

IPC: H01L21/44 ,  H01L21/4763 ,  H01L21/28 ,  H01L27/108 ,  H01L49/02 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L21/28273 ,  H01L21/28282 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/513

Abstract: Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Abstract translation: 制造包括多层电介质层的半导体器件的方法可以包括在半导体衬底上形成金属氧化物层，并在金属氧化物层上形成包含金属原子和硅原子的多层硅酸盐层。 硅酸盐层的多层可以包括具有不同硅浓度的至少两个金属硅酸盐层，其是包含在金属硅酸盐层中的所有金属原子和硅原子之间的硅原子的比率。

公开(公告)号：US08357593B2

公开(公告)日：2013-01-22

申请号：US12688044

申请日：2010-01-15

Applicant: Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

Inventor： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

IPC: H01L21/322

CPC classification number: H01L21/314 ,  H01L21/02041 ,  H01L21/67034

Abstract: Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.

Abstract translation: 提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。 除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。

公开(公告)号：US08104946B2

公开(公告)日：2012-01-31

申请号：US12173176

申请日：2008-07-15

Applicant: Jun Seok An ,  Jong Cheol Lee ,  Dae Hyoun Byoun ,  Tae Jun You

Inventor： Jun Seok An ,  Jong Cheol Lee ,  Dae Hyoun Byoun ,  Tae Jun You

IPC: F21V21/00

CPC classification number: G02F1/133605 ,  G02F1/133604 ,  G02F1/133608

Abstract: A backlight assembly, in which several parts are unified so as to reduce a number of parts used and simplify an assembly process includes lamps emitting light, first lamp sockets, each of which includes a first connection member coupled with one end of each of the lamps so as to be electrically connected to the end of each of the lamps, and a reflection plate to reflect the light emitted from the lamps, and including socket fixing units formed integrally therewith to respectively fix the first lamp sockets. Each of the socket fixing units includes a socket fixing groove formed on a bottom plane of the reflection plate.

Abstract translation: 一种背光组件，其中多个部件是统一的，以便减少使用的部件数量并简化组装过程，包括发射光的灯，第一灯插座，每个灯插座包括与每个灯的一端连接的第一连接部件 以电连接到每个灯的端部，以及反射板，用于反射从灯发射的光，并且包括与其一体形成的插座固定单元，以分别固定第一灯插座。 每个插座固定单元包括形成在反射板的底平面上的插座固定槽。

公开(公告)号：US20110236617A1

公开(公告)日：2011-09-29

申请号：US13133156

申请日：2009-11-13

Applicant: Sun-Kil Hong ,  Jong-Cheol Lee ,  Youn-Woo Nam

Inventor： Sun-Kil Hong ,  Jong-Cheol Lee ,  Youn-Woo Nam

IPC: B32B33/00 ,  B32B37/00

CPC classification number: B32B27/36 ,  B32B7/06 ,  B32B7/12 ,  B32B27/10 ,  B32B29/00 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2260/028 ,  B32B2260/048 ,  B32B2307/402 ,  B32B2307/412 ,  B32B2307/716 ,  B32B2307/732 ,  B32B2307/75 ,  C08K3/013 ,  C08L67/02 ,  C08L67/04 ,  C09J7/255 ,  C09J7/29 ,  C09J2201/162 ,  C09J2201/606 ,  C09J2433/00 ,  C09J2467/006 ,  Y10T156/10 ,  Y10T428/1476

Abstract: Disclosed are a material for advertisement and a method for manufacturing the same. The material for advertisement includes a surface film layer, a pressure-sensitive adhesive layer and a release layer stacked in sequence, in which the surface film layer is composed of a biodegradable film layer containing 5 to 40 wt % of a biodegradable polymer and 95 to 60 wt % of an aliphatic polyester. The material including the biodegradable film layer can be used for print advertisement to be discarded after being used for a short period of time, and has biodegradability of 60% or more as compared with cellulose within six months when discarded, so that a toxic environmental hormone due to polyvinylchloride (PVC) is not emitted, and the environment is protected, thereby being very friendly toward humans and the earth.

Abstract translation: 公开了广告用材料及其制造方法。 用于广告的材料包括依次堆叠的表面膜层，压敏粘合剂层和剥离层，其中表面膜层由包含5至40重量％的生物可降解聚合物的生物降解性膜层和95至 60重量％的脂肪族聚酯。 包含可生物降解膜层的材料可以用于在短时间使用后被丢弃的印刷广告，并且在丢弃时在六个月内与纤维素相比具有60％以上的生物降解性，从而使毒性环境激素 由于聚氯乙烯（PVC）不被排放，环境受到保护，因此对人和地球非常友好。

公开(公告)号：US20110183512A1

公开(公告)日：2011-07-28

申请号：US12793843

申请日：2010-06-04

Applicant: Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

Inventor： Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

IPC: H01L21/768

CPC classification number: H01L23/485 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L27/10814 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.

Abstract translation: 形成半导体器件的方法包括在衬底上形成下导电图案，在下导电图案上形成绝缘层，形成通过绝缘层的接触孔，露出下导电图案，沿着第 接触孔，然后在接触孔中形成接触塞。 接触塞形成为接触下导电图案。

公开(公告)号：US20110073832A1

公开(公告)日：2011-03-31

申请号：US12892419

申请日：2010-09-28

Applicant: Hyun-Seok LIM ,  Shin-Jae Kang ,  Tai-Soo Lim ,  Jong-Cheol Lee ,  Jae-Hyoung Choi

Inventor： Hyun-Seok LIM ,  Shin-Jae Kang ,  Tai-Soo Lim ,  Jong-Cheol Lee ,  Jae-Hyoung Choi

IPC: H01L45/00

CPC classification number: H01L45/148 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

Abstract: A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon.

Abstract translation: 相变存储器件，包括下电极，电连接到下电极的相变材料图案，以及电连接到相变材料图案的上电极。 下电极可以包括第一结构，其包括金属半导体化合物，第一结构上的第二结构，第二结构包括金属氮化物材料，并且包括具有比上部宽度更大的下部的第一结构，以及包括 包含元素X的金属氮化物材料，第三结构在第二结构上，元素X包括选自硅，硼，铝，氧和碳中的至少一种。