公开(公告)号：US20060042544A1

公开(公告)日：2006-03-02

申请号：US11209741

申请日：2005-08-24

Applicant: Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

Inventor： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

IPC: B08B3/12 ,  C23C16/00

CPC classification number: C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

公开(公告)号：US20050170617A1

公开(公告)日：2005-08-04

申请号：US10965819

申请日：2004-10-18

Applicant: Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

Inventor： Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC: C23C16/02 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  C30B1/00 ,  H01L21/20 ,  H01L21/36

CPC classification number: C23C16/0272 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/324 ,  H01L29/4966

Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

Abstract translation: 在半导体工艺的成膜方法中，在反应容器内的工艺场中通过CVD在靶基板上形成硅锗膜。 然后，在工艺领域中通过CVD覆盖硅锗膜，同时将工艺场的温度从第一温度升至第二温度。 然后，通过CVD法在涂膜上形成硅膜。

公开(公告)号：US20050164518A1

公开(公告)日：2005-07-28

申请号：US10992469

申请日：2004-11-19

Applicant: Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

Inventor： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

IPC: H01L21/00 ,  H01L21/316 ,  H01L21/31

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

Abstract: An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

Abstract translation: 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体和还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

公开(公告)号：US20050066993A1

公开(公告)日：2005-03-31

申请号：US10927415

申请日：2004-08-26

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Hiromichi Kotsugai

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Hiromichi Kotsugai

IPC: H01L21/304 ,  B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  C23C16/4404 ,  Y10S438/905

Abstract: The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.

Abstract translation: 本发明涉及清洗薄膜形成装置的技术。 在典型的实施方案中，通过在反应管内部以预定温度加热反应管的同时，通过蚀刻将清洗气体加入到反应管中，通过蚀刻来除去源自用于形成薄膜并沉积在反应管内表面上的工艺气体的沉积物 。 对通过蚀刻粗糙化的反应管的内表面进行平坦化步骤。 通过在将反应管2的内部保持在室温等低温的同时，向反应管内供给含有氟化氢的气体来进行平坦化工序。 平面化步骤在防止薄膜形成工艺中沉积速率的降低方面是有效的。

公开(公告)号：US20050028738A1

公开(公告)日：2005-02-10

申请号：US10494970

申请日：2002-09-27

Applicant: Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

Inventor： Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  C23C16/00

CPC classification number: H01L21/67109 ,  H01L21/67098

Abstract: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

Abstract translation: 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

公开(公告)号：US5783257A

公开(公告)日：1998-07-21

申请号：US864907

申请日：1997-05-29

Applicant: Seiichi Shishiguchi ,  Kazuhide Hasebe ,  Nobuaki Shigematsu

Inventor： Seiichi Shishiguchi ,  Kazuhide Hasebe ,  Nobuaki Shigematsu

IPC: C23C16/24 ,  C23C16/56 ,  H01L21/20 ,  H01L21/205 ,  H01L21/3215 ,  H01L21/324 ,  C23C16/22

CPC classification number: C23C16/24 ,  C23C16/56 ,  H01L21/32155

Abstract: A number of wafers are loaded into a reaction vessel on a wafer boat; monosilane gas, phosphine gas and N.sub.2 O gas are supplied to form amorphous silicon film doped with, e.g., phosphorus; and then the wafers are annealed in, e.g., a different reaction tube to polycrystallize the amorphous silicon film. Os (Oxygen) generated by decomposition of N.sub.2 O are taken into the film. The Os become nuclei of the silicon crystals, and the crystals become fine and have size uniformity. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained. Resistance values of the polysilicon film can be easily controlled by addition of oxygen. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained.

Abstract translation: 将许多晶片装载到晶片舟皿上的反应容器中; 供应单硅烷气体，磷化氢气体和N 2 O气体以形成掺杂有例如磷的非晶硅膜; 然后将晶片在例如不同的反应管中退火以使非晶硅膜多晶化。 将由N 2 O分解产生的氧（氧）引入膜中。 Os成为硅晶体的核，晶体变细并具有尺寸均匀性。 结果，可以获得多晶硅膜的微粉化器件的电阻值的高均匀性。 可以通过添加氧容易地控制多晶硅膜的电阻值。 结果，可以获得多晶硅膜的微粉化器件的电阻值的高均匀性。

公开(公告)号：US5458685A

公开(公告)日：1995-10-17

申请号：US104651

申请日：1993-08-11

Applicant: Kazuhide Hasebe ,  Nobuaki Takahashi ,  Keiji Sukekawa

Inventor： Kazuhide Hasebe ,  Nobuaki Takahashi ,  Keiji Sukekawa

IPC: C23C16/44 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67109 ,  C23C16/4401 ,  C23C16/4412

Abstract: The present invention relates to a heat treatment apparatus wherein treatment objects such as semiconductor wafers contained in a treatment boat are loaded in a treatment container such as a process tube. Water vapor is supplied from the top of the treatment container toward the bottom for heat treatment of the treatment objects to permit water vapor passage between the treatment container top and the top face of the heat treatment boat. A gas diffusion plate possessing for example 16 flow holes is provided, moreover, a heat treatment space is formed at the bottom direction of the gas diffusion plate. These flow holes are arranged at equal intervals in the circumference direction of a space between the outer circumference of the treatment objects held by the heat treatment boat and the inner side of the treatment container. As a result of this type of construction, the supplied treatment gas (water vapor) can quickly and completely cover all of a plurality of treatment objects contained horizontally at equal spacing in the vertical direction of the heat treatment apparatus to enable uniform heat treatment.

Abstract translation: 本发明涉及一种热处理装置，其中包含在处理舟皿中的诸如半导体晶片的处理物体被装载在诸如处理管的处理容器中。 从处理容器的顶部向底部供给水蒸汽，以对处理对象进行热处理，以允许处理容器顶部和热处理舟皿的顶面之间的水蒸气通过。 另外，提供了具有例如16个流动孔的气体扩散板，并且在气体扩散板的底部方向上形成热处理空间。 这些流动孔在由热处理舟保持的处理对象的外周与处理容器的内侧之间的空间的圆周方向上以相等的间隔配置。 作为这种结构的结果，所供给的处理气体（水蒸汽）可以快速且完全地覆盖热处理设备的垂直方向上以等间隔水平地包含的所有多个处理对象，以实现均匀的热处理。

公开(公告)号：US08563096B2

公开(公告)日：2013-10-22

申请号：US12954767

申请日：2010-11-26

Applicant: Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

Inventor： Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

IPC: C23C16/02 ,  H05H1/24

CPC classification number: C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546

Abstract: A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

Abstract translation: 使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理 具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。 涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。 成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

公开(公告)号：US08426117B2

公开(公告)日：2013-04-23

申请号：US12567834

申请日：2009-09-28

Applicant: Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: G03F7/26

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract translation: 在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜 以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。 在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

公开(公告)号：US08357619B2

公开(公告)日：2013-01-22

申请号：US13040565

申请日：2011-03-04

Applicant: Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

IPC: H01L21/00

CPC classification number: C23C16/452 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/31612

Abstract: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.

Abstract translation: 在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。 通过交替地执行包括第一和第二步骤的循环的多次来形成膜。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。 第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。