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    Reverse conducting insulated gate bipolar transistor
    61.
    发明授权
    Reverse conducting insulated gate bipolar transistor 有权
    反向导通绝缘栅双极晶体管

    公开(公告)号：US09018674B2

    公开(公告)日：2015-04-28

    申请号：US13441364

    申请日：2012-04-06

    申请人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    发明人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834

    摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.

    摘要翻译： 半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。 半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。 半导体器件还包括邻近第一和第二区域的第二侧的电极。 半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。 第三区域与第二区域和第二区域隔开。

    Power semiconductor diode, IGBT, and method for manufacturing thereof
    63.
    发明授权
    Power semiconductor diode, IGBT, and method for manufacturing thereof 有权
    功率半导体二极管，IGBT及其制造方法

    公开(公告)号：US08809902B2

    公开(公告)日：2014-08-19

    申请号：US13274411

    申请日：2011-10-17

    申请人： Holger Huesken ,  Anton Mauder ,  Hans-Joachim Schulze ,  Wolfgang Roesner

    发明人： Holger Huesken ,  Anton Mauder ,  Hans-Joachim Schulze ,  Wolfgang Roesner

    IPC分类号： H01L29/739

    CPC分类号： H01L29/0688 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66143 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/872

    摘要： A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.

    摘要翻译： 提供功率半导体二极管。 功率半导体二极管包括具有第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一发射极区域和第二发射极区域之间的第一导电类型的漂移区域的半导体衬底。 漂移区域与第二发射极区域形成pn结。 第一发射极金属化与第一发射极区域接触。 第一发射极区域包括第一导电类型的第一掺杂区域和第一导电类型的第二掺杂区域。 第一掺杂区与第一发射极金属化形成欧姆接触，第二掺杂区与第一发射极金属化形成非欧姆接触。 第二发射极金属化与第二发射极区域接触。

    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
    65.
    发明申请
    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
    具有动态栅极导通电容的半导体器件

    公开(公告)号：US20130009227A1

    公开(公告)日：2013-01-10

    申请号：US13614479

    申请日：2012-09-13

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    IPC分类号： H01L27/07 ,  H01L21/8234

    CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

    摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

    摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

    Transistor Component with Reduced Short-Circuit Current
    67.
    发明申请
    Transistor Component with Reduced Short-Circuit Current 审中-公开
    具有降低短路电流的晶体管组件

    公开(公告)号：US20120037955A1

    公开(公告)日：2012-02-16

    申请号：US13197903

    申请日：2011-08-04

    申请人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

    发明人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

    IPC分类号： H01L27/06

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L29/04 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

    摘要翻译： 晶体管部件在半导体本体中包括源极区和第一导电类型的漂移区，以及与第一导电类型互补的第二导电类型的体区，布置在漂移区和源极区之间的体区。 所述晶体管部件还包括与所述源极区域和所述主体区域接触的源极电极，与所述主体区域相邻的栅极电极，并且通过栅极介电层与所述主体区域介电绝缘，以及连接在所述漂移区域 源电极。 二极管结构包括与半导体主体中的漂移区相邻的第一发射区和与第一发射区邻接的第一导电类型的第二发射极区。 第二发射极区域与源极连接，发射极效率γ小于0.7。

    Semiconductor device including a vertical gate zone, and method for producing the same
    68.
    发明授权
    Semiconductor device including a vertical gate zone, and method for producing the same 有权
    包括垂直栅极区的半导体器件及其制造方法

    公开(公告)号：US08044458B2

    公开(公告)日：2011-10-25

    申请号：US11752590

    申请日：2007-05-23

    申请人： Anton Mauder ,  Hans-Joachim Schulze

    发明人： Anton Mauder ,  Hans-Joachim Schulze

    IPC分类号： H01L29/94

    CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878

    摘要： A semiconductor device includes a semiconductor body defining a trench structure having walls. A plurality of vertical gate zones each have a gate electrode and a gate oxide that covers the walls of the trench structure. A body zone of a first conduction type is arranged between two of the gate zones and a drift zone of a complementary conduction type with respect to the first conduction type vertically adjoins the body zone. Floating shielding zones of the first conduction type are arranged adjacent to the gate zones and extend into the semiconductor body deeper than the trench structure of the gate zones. A pn junction with the drift zone is below the trench structure. A buried dopant zone of the same charge type as the drift zone has a higher impurity concentration than the drift zone and is arranged in a space charge region of the pn junction at a distance from the trench bottom of the trench structure.

    摘要翻译： 半导体器件包括限定具有壁的沟槽结构的半导体本体。 多个垂直栅极区域各自具有覆盖沟槽结构的壁的栅电极和栅极氧化物。 第一导电类型的主体区域布置在两个栅极区域之间，并且相对于第一导电类型的互补导电类型的漂移区域垂直邻接身体区域。 第一导电类型的浮动屏蔽区域布置成与栅极区相邻并且延伸到比栅极区的沟槽结构更深的半导体本体中。 具有漂移区的pn结在沟槽结构之下。 与漂移区相同的电荷类型的掩埋掺杂区具有比漂移区更高的杂质浓度，并且被布置在与沟槽结构的沟槽底部一定距离的pn结的空间电荷区中。

    Method for producing an integrated circuit including a semiconductor
    69.
    发明授权
    Method for producing an integrated circuit including a semiconductor 有权
    包括半导体的集成电路的制造方法

    公开(公告)号：US07781294B2

    公开(公告)日：2010-08-24

    申请号：US11831362

    申请日：2007-07-31

    申请人： Anton Mauder ,  Hans-Joachim Schulze

    发明人： Anton Mauder ,  Hans-Joachim Schulze

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L29/32

    摘要： A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect density distribution in the vertical direction of the semiconductor component and lead to a corresponding inhomogeneous distribution of the carrier lifetime.

    摘要翻译： 公开了一种用于制造包括半导体的集成电路的方法。 在一个实施例中，通过在下面的半导体衬底的材料中照射产生晶体缺陷，该晶体缺陷在半导体组件的垂直方向上形成不均匀的晶体缺陷密度分布，并导致载流子寿命的相应不均匀分布。