公开(公告)号：US20250167062A1

公开(公告)日：2025-05-22

申请号：US19035259

申请日：2025-01-23

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Xiaoxuan Sun ,  Nitin A. Deshpande ,  Sairam Agraharam

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/18

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US12181710B2

公开(公告)日：2024-12-31

申请号：US17237375

申请日：2021-04-22

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Xiaoqian Li ,  Tarek A. Ibrahim ,  Ravindranath Vithal Mahajan ,  Nitin A. Deshpande

IPC: G02B6/122 ,  G02B6/12

Abstract: Photonic packages and device assemblies that include photonic integrated circuits (PICs) coupled to optical lenses on lateral sides of the PICs. An example photonic package comprises a package support, an integrated circuit (IC), an insulating material, a PIC having an active side and a lateral side substantially perpendicular to the active side. At least one optical structure is on the active side. A substantial portion of the active side is in contact with the insulating material, and the PIC is electrically coupled to the package support and to the IC. The photonic package further includes an optical lens coupled to the PIC on the lateral side. In some embodiments, the photonic package further includes an interposer between the PIC or the IC and the package support.

公开(公告)号：US12119326B2

公开(公告)日：2024-10-15

申请号：US17126505

申请日：2020-12-18

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Bohan Shan

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L25/0655 ,  H01L23/5381 ,  H01L23/5383 ,  H01L24/16 ,  H01L2224/16227

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US20240319437A1

公开(公告)日：2024-09-26

申请号：US18189844

申请日：2023-03-24

Applicant: Intel Corporation

Inventor： Xiaoqian Li ,  Omkar G. Karhade ,  Nitin A. Deshpande ,  Julia Chiu ,  Chia-Pin Chiu ,  Kaveh Hosseini ,  Madhubanti Chatterjee

IPC: G02B6/12 ,  G02B6/136

CPC classification number: G02B6/12002 ,  G02B6/136

Abstract: A photonic integrated circuit (PIC), a semiconductor assembly including the PIC, a multi-chip package including the PIC, and a method of forming the PIC. The PIC includes a PIC substrate, and a semiconductor layer on a top surface of the PIC substrate and including a semiconductor material and an optical component. The PIC substrate defines an air cavity therein extending in a direction from a bottom surface of the PIC substrate toward and in registration with the optical component. The semiconductor layer is free of any opening therethrough in communication with the air cavity.

公开(公告)号：US20240063178A1

公开(公告)日：2024-02-22

申请号：US17821001

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Jimin Yao ,  Adel A. Elsherbini ,  Xavier Francois Brun ,  Kimin Jun ,  Shawna M. Liff ,  Johanna M. Swan ,  Yi Shi ,  Tushar Talukdar ,  Feras Eid ,  Mohammad Enamul Kabir ,  Omkar G. Karhade ,  Bhaskar Jyoti Krishnatreya

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L23/3107 ,  H01L24/16 ,  H01L24/08 ,  H01L2225/06548 ,  H01L2224/16227 ,  H01L2224/08145 ,  H01L2224/13116 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13109 ,  H01L2224/13118 ,  H01L24/13 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05613 ,  H01L2224/05609 ,  H01L2224/05605 ,  H01L24/05

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die and a through-dielectric via (TDV) surrounded by a dielectric material in a first layer, where the TDV has a greater width at a first surface and a smaller width at an opposing second surface of the first layer; a second die, surrounded by the dielectric material, in a second layer on the first layer, where the first die is coupled to the second die by interconnects having a pitch of less than 10 microns, and the dielectric material around the second die has an interface seam extending from a second surface of the second layer towards an opposing first surface of the second layer with an angle of less than 90 degrees relative to the second surface; and a substrate on and coupled to the second layer.

公开(公告)号：US20230420436A1

公开(公告)日：2023-12-28

申请号：US17846109

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Omkar G. Karhade ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma ,  Tahir Ghani ,  Anand S. Murthy ,  Nitin A. Deshpande

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L24/08 ,  H01L23/5226 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/08145

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first region having a first surface; a second region attached to the first region along a first planar interface that is orthogonal to the first surface; and a third region attached to the second region along a second planar interface that is parallel to the first planar interface, the third region having a second surface, the second surface being coplanar with the first surface. The first region and the third region comprise a plurality of layers of conductive traces in a dielectric material, the conductive traces being orthogonal to the first and second surfaces; and bond-pads on the first and second surfaces, the bond-pads comprising portions of the respective conductive traces exposed on the first and second surfaces.

公开(公告)号：US11804441B2

公开(公告)日：2023-10-31

申请号：US16902910

申请日：2020-06-16

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Debendra Mallik

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L25/18

CPC classification number: H01L23/5385 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/73253

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate including a first metal layer and a second metal layer; a cavity in the substrate, wherein a portion of the first metal layer in the substrate and a portion of the second metal layer in the substrate are exposed in the cavity; and a bridge component in the cavity, the bridge component includes a first conductive contact at a first face and a second conductive contacts at an opposing second face, wherein the second face of the bridge component is between the first face of the bridge component and a bottom surface of the cavity in the substrate, and wherein the second conductive contact is electrically coupled to the portion of the first metal layer in the cavity.

公开(公告)号：US20230343769A1

公开(公告)日：2023-10-26

申请号：US17728147

申请日：2022-04-25

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Debendra Mallik ,  Steve Cho ,  Babak Sabi

IPC: H01L25/00 ,  H01L21/78 ,  H01L23/00 ,  H01L23/522 ,  H01L25/18

CPC classification number: H01L25/18 ,  H01L21/78 ,  H01L23/5226 ,  H01L24/08 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/13 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155

Abstract: Embodiments of a microelectronic assembly comprise a microelectronic assembly, comprising: a stack of layers coupled by at least fusion bonds; a package substrate coupled to a first layer in the stack of layers; one or more dies in the first layer; and one or more dies in a second layer in the stack of layers, the second layer coupled to the first layer, wherein: a copper lining is between adjacent surfaces of any two adjacent dies in at least one of the first layer and the second layer, and the copper lining contacts and substantially covers the adjacent surfaces. In various embodiments, the dies comprise dummy dies and integrated circuit (IC) dies, the dummy dies are one of: semiconductor dies without any ICs, and semiconductor dies having non-functional ICs, and the IC dies comprise semiconductor dies having functional ICs.

公开(公告)号：US20230341638A1

公开(公告)日：2023-10-26

申请号：US17725018

申请日：2022-04-20

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu ,  Omkar G. Karhade ,  Kaveh Hosseini

IPC: G02B6/42

CPC classification number: G02B6/4212 ,  G02B6/428 ,  G02B6/4273 ,  G02B6/4206

Abstract: Variations in a thermal structure for an open cavity photonic integrated circuit (OCPIC) having an MRR. The structure includes an air trench in fluid communication with an air cavity that is located under the MRR. The air trench is a gap/opening in the oxide that encircles at least a portion of the MRR and extends outward radially therefrom, with a consistent width, to a diameter D1. An oxide cladding is not removed in areas that are used for metal traces and routing. The structure is characterized by straight walls along the air trench. The structure has a lower diameter D2, measured at a bottom/floor of the air cavity. In various embodiments, D2 is substantially equal to D1.

公开(公告)号：US20230087809A1

公开(公告)日：2023-03-23

申请号：US17482295

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Xiaoqian Li ,  Omkar G. Karhade ,  Nitin A. Deshpande

IPC: G02B6/42

Abstract: Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include an integrated circuit (IC) in a first layer including an insulating material, wherein the IC is embedded in the insulating material; a PIC, having an active surface, in a second layer, wherein the second layer is on the first layer, the second layer includes the insulating material, and the PIC is embedded in the insulating material with the active surface facing the first layer and electrically coupled to the IC; and a housing, having an optical lens optically coupled to an internal surface of the housing, attached to the active surface of the PIC and extending from the active surface of the PIC through the insulating material in the first layer, wherein the internal surface of the housing is opposite the active surface of the PIC.