摘要:
Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.
摘要:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.
摘要:
A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.
摘要:
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.
摘要:
A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
摘要:
A structure, and method of fabrication, for high performance semiconductor field effect devices is disclosed. These devices are having a gate dielectric containing a germanate material. In representative embodiments the gate dielectric is essentially a layer of a germanate material. The chemical composition of such materials is MezGexOy, where Me stands for a metal with high ion polarizability, and x, y, and z are non-zero integers. Such a gate dielectric is advantageous, from the point of view of dielectric constant, barrier height, carrier mobility, thermal stability, and interface stability.
摘要翻译:公开了一种用于高性能半导体场效应器件的结构和制造方法。 这些器件具有含有锗酸盐材料的栅极电介质。 在代表性的实施例中,栅极电介质基本上是锗酸盐材料层。 这种材料的化学成分是Me z O x O x O y,其中Me代表具有高离子极化率的金属,x,y ,z是非零整数。 从介电常数,势垒高度,载流子迁移率,热稳定性和界面稳定性的观点来看,这种栅极电介质是有利的。
摘要:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.
摘要:
A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH3) gas, and then re-oxidizing the initial nitride layer by rapidly heating the initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer. The oxynitride layer has a nitrogen concentration therein of at about 1.0×1015 atoms/cm2 to about 6.0×1015 atoms/cm2, and has a thickness which may be controlled within a sub 10 Å range.
摘要翻译:公开了一种用于形成用于集成电路器件的超薄栅极电介质的方法。 在本发明的一个示例性实施例中,该方法包括通过在氨(NH 3)气体存在下快速加热衬底,然后通过快速加热初始氮化物来再次氧化初始氮化物层,在衬底上形成初始氮化物层 在一氧化氮(NO)气体的存在下形成氮氧化物层。 氧氮化物层的氮浓度为约1.0×10 15原子/ cm 2至约6.0×10 15原子/ cm 2,并且其厚度可控制在亚范围内 。