摘要:
A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.
摘要:
A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.
摘要:
A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.
摘要:
A method and an optical arrangement for removing contamination on optical surfaces (26), which are arranged in a vacuum environment in an optical arrangement, preferably in a projection exposure apparatus (1) for EUV lithography. The method includes generating a residual gas atmosphere containing molecular hydrogen (18) and at least one inert gas (17) in the vacuum environment, generating inert gas ions (21) by ionization of the inert gas (17), preferably with EUV radiation (20), and generating atomic hydrogen (27) by acceleration of the inert gas ions (21) in the residual gas atmosphere, to remove the contamination.
摘要:
The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.
摘要:
A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.
摘要:
An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation, and an absorber arranged in the beam and constructed and arranged to absorb at least a portion of the radiation beam. The absorber has a volume configured to accommodate a flow of an absorbing gas. The flow is directed in a transverse direction with respect to the beam. The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area. The apparatus also includes a gas inlet actuator array configured to inject the gas into the volume and a gas outlet actuator array arranged to evacuate the gas from the volume.
摘要:
An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.
摘要:
A lithographic system includes a radiation system configured to provide a beam of radiation; an illumination system configured to condition the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and transmission adaptor arranged along an optical pathway. The radiation system includes a source configured to generate a beam of radiation. The transmission adaptor adapts an intensity profile as a function of wavelength of the beam of radiation and/or the patterned beam in such a way that the intensity profile equals a predetermined intensity profile.
摘要:
A lithographic projection apparatus according to one embodiment of the invention includes a projection system having a plurality of optical elements or sensors mounted on a frame. The frame includes support portions made of a material (e.g. a glass ceramic) having a coefficient of thermal expansion of less than or approximately equal to 0.1×10−6 K−1.
摘要翻译:根据本发明的一个实施例的光刻投影设备包括具有安装在框架上的多个光学元件或传感器的投影系统。 框架包括由热膨胀系数小于或大约等于0.1×10 -6 K -1的材料(例如玻璃陶瓷)制成的支撑部分。