公开(公告)号：US20080132070A1

公开(公告)日：2008-06-05

申请号：US11566848

申请日：2006-12-05

申请人： Wai-Kin Li ,  Haining Yang

发明人： Wai-Kin Li ,  Haining Yang

IPC分类号： H01L21/44

CPC分类号： H01L29/42316 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78 ,  Y10S977/892

摘要： Fully and uniformly silicided gate conductors are produced by deeply “perforating” silicide gate conductors with sub-lithographic, sub-critical dimension, nanometer-scale openings. A silicide-forming metal (e.g. cobalt, tungsten, etc.) is then deposited, polysilicon gates, covering them and filling the perforations. An anneal step converts the polysilicon to silicide. Because of the deep perforations, the surface area of polysilicon in contact with the silicide-forming metal is greatly increased over conventional silicidation techniques, causing the polysilicon gate to be fully converted to a uniform silicide composition. A self-assembling diblock copolymer is used to form a regular sub-lithographic nanometer-scale pattern that is used as an etching “template” for forming the perforations.

摘要翻译： 通过用亚光刻，亚临界尺寸，纳米级开口深度“穿孔”硅化物栅极导体，产生完全均匀的硅化栅极导体。 然后沉积硅化物形成金属（例如钴，钨等），覆盖它们并填充穿孔的多晶硅栅极。 退火步骤将多晶硅转化为硅化物。 由于深的穿孔，与硅化物形成金属接触的多晶硅的表面积比常规硅化技术大大增加，导致多晶硅栅极被完全转变成均匀的硅化物组成。 使用自组装二嵌段共聚物来形成用作形成穿孔的蚀刻“模板”的规则的亚光刻纳米尺度图案。

公开(公告)号：US20080099845A1

公开(公告)日：2008-05-01

申请号：US11552641

申请日：2006-10-25

申请人： Haining Yang ,  Wai-Kin Li

发明人： Haining Yang ,  Wai-Kin Li

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392 ,  H01L21/8238

CPC分类号： H01L21/28123 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L29/66583 ,  H01L29/78

摘要： A semiconductor structure including at least one transistor located on a surface of a semiconductor substrate, wherein the at least one transistor has a sub-lithographic channel length, is provided. Also provided is a method to form such a semiconductor structure using self-assembling block copolymer that can be placed at a specific location using a pre-fabricated hard mask pattern.

摘要翻译： 提供了包括位于半导体衬底的表面上的至少一个晶体管的半导体结构，其中所述至少一个晶体管具有亚光刻沟道长度。 还提供了使用可以使用预制的硬掩模图案放置在特定位置的自组装嵌段共聚物来形成这种半导体结构的方法。

公开(公告)号：US20070259162A1

公开(公告)日：2007-11-08

申请号：US11827014

申请日：2007-07-10

申请人： Colin Brodsky ,  Wai-Kin Li ,  Steven Scheer

发明人： Colin Brodsky ,  Wai-Kin Li ,  Steven Scheer

IPC分类号： B32B7/02

CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.

摘要翻译： 提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。 可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。 如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。 理想地，所得到的第二膜基本上没有脱湿缺陷。

公开(公告)号：US07267863B2

公开(公告)日：2007-09-11

申请号：US10880818

申请日：2004-06-30

申请人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

发明人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

IPC分类号： B32B18/00 ,  B32B27/08 ,  B32B27/30

CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

摘要： A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.

摘要翻译： 提供了一种薄膜叠层和形成薄膜叠层的方法，其中第一薄膜设置在基底上，第二薄膜具有设置在第一薄膜上的内表面。 如果第二膜直接设置在基板上，则第二膜的厚度小于第二膜从基板开始露出的基准厚度。 然而，第二膜基本上没有脱湿缺陷，因为它被布置在第一膜上，该第一膜具有相对于基底具有负值的第一Hamaker常数。

公开(公告)号：US06960532B2

公开(公告)日：2005-11-01

申请号：US10248911

申请日：2003-02-28

申请人： Linda A. Chen ,  Wai-Kin Li

发明人： Linda A. Chen ,  Wai-Kin Li

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/8242 ,  H01L21/302

CPC分类号： H01L21/0273 ,  G03F7/2022 ,  G03F7/2028 ,  H01L21/3083 ,  H01L27/10844

摘要： Damage to the rim of a semiconductor wafer caused by etching processes is reduced by forming a rim of carbonized photoresist around the outer edge of the wafer, using a wafer edge tool to carbonize the outer rim of a positive tone photoresist.

摘要翻译： 通过使用晶片边缘工具在正色调光致抗蚀剂的外缘碳化来形成碳化光致抗蚀剂周缘在晶片的外边缘上，从而减少了由蚀刻工艺引起的半导体晶片的边缘的损伤。

公开(公告)号：US06949459B2

公开(公告)日：2005-09-27

申请号：US10704022

申请日：2003-11-07

申请人： Wai-Kin Li ,  Chih-Chao Yang ,  Yi-hsiung Lin

发明人： Wai-Kin Li ,  Chih-Chao Yang ,  Yi-hsiung Lin

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76831

摘要： Disclosed is a method that deposits an aqueous material having a pH between approximately 10 and 11 in a first opening and on an oxide hard mask, deposits an organic material on the aqueous material, and patterns a photoresist over the organic material. The invention then etches the organic material and the aqueous material through the photoresist to form a second opening above the first opening and forms a polymer along sidewalls of the second opening. The invention can then perform a wet cleaning process using an alkali solution having a pH between approximately 10 and 11 to remove the aqueous material from the first opening. By utilizing an alkali aqueous (water-based) material having a pH of approximately 10-11, the invention can use a fairly low pH wet etch (pH of approximately 10-11) to completely remove the aqueous solution from the via, thereby eliminating the conventional problem of having residual organic material left within the via.

公开(公告)号：US08722307B2

公开(公告)日：2014-05-13

申请号：US13118013

申请日：2011-05-27

申请人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

发明人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

IPC分类号： G03F7/004 ,  G03F7/11

CPC分类号： G03F7/038 ,  G03F7/0046 ,  G03F7/091

摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.

摘要翻译： 包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化 基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

公开(公告)号：US20140035142A1

公开(公告)日：2014-02-06

申请号：US13562953

申请日：2012-07-31

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76844 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.

摘要翻译： 可以通过在形成介电材料之前形成电介质材料的每个通孔开口内形成轮廓控制衬垫来控制通孔的轮廓，然后在电介质材料内形成线路开口。 在形成线路开口期间在每个通孔开口内存在轮廓控制衬垫防止存在于线路开口下方并且邻近通孔开口的电介质材料部分的拐角的四舍五入。

公开(公告)号：US08609327B2

公开(公告)日：2013-12-17

申请号：US12170722

申请日：2008-07-10

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/2024

摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.

摘要翻译： 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。

公开(公告)号：US08492079B2

公开(公告)日：2013-07-23

申请号：US12430919

申请日：2009-04-28

申请人： Chia-Chen Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Chandrasekhar Sarma

发明人： Chia-Chen Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Chandrasekhar Sarma

IPC分类号： G03F7/20

CPC分类号： G03F7/70466 ,  G03F1/70 ,  G03F7/095 ,  G03F7/203 ,  Y10T428/24802

摘要： A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.

摘要翻译： 在基板上形成具有第二光敏性的第二光致抗蚀剂。 在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 优选地，第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。 使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分，而第二光致抗蚀剂保持完整。 使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光，以在第二光致抗蚀剂中形成多个光刻曝光的形状。 多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。