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    ELECTROCHEMICALLY FUNCTIONAL MEMBRANES
    62.
    发明申请
    ELECTROCHEMICALLY FUNCTIONAL MEMBRANES 审中-公开
    电化学功能膜

    公开(公告)号：US20130256122A1

    公开(公告)日：2013-10-03

    申请号：US13819369

    申请日：2011-08-31

    申请人： Shriram Ramanathan ,  Daniel V. Harburg ,  Masaru Tsuchiya ,  Alexander C. Johnson

    发明人： Shriram Ramanathan ,  Daniel V. Harburg ,  Masaru Tsuchiya ,  Alexander C. Johnson

    IPC分类号： C25B13/02

    CPC分类号： C25B13/02 ,  H01M4/9066 ,  H01M8/02 ,  H01M8/0247 ,  H01M8/1253 ,  H01M8/1286 ,  H01M2008/1293 ,  Y02E60/525 ,  Y02P70/56

    摘要： A system includes an electrochemically functional membrane, and a support structure constructed and arranged so as to support the membrane while leaving within the membrane a chemically active area having an area utilization of at least about 50%. In some embodiments, the support structure may include a plurality of grids that are sized and shaped so that the contact area between the grids and the membrane is reduced to less than about 40%. In some embodiments, the support structure may include aerogels, for example PVA-reinforced CNT aerogels having a conductivity that is increased by pyrolysis. The system may be a gas separation system; a gas production system; a gas purification system; or an energy generation system such as an SOFC.

    摘要翻译： 一种系统包括电化学功能膜，以及支撑结构，其构造和布置成在膜内留下具有至少约50％的面积利用率的化学活性区域的同时支撑膜。 在一些实施例中，支撑结构可以包括多个格栅，其尺寸和形状使得网格和膜之间的接触面积减小到小于约40％。 在一些实施例中，支撑结构可以包括气凝胶，例如具有通过热解增加的导电性的PVA增强的CNT气凝胶。 该系统可以是气体分离系统; 天然气生产系统; 气体净化系统; 或诸如SOFC的能量产生系统。

    Electric field induced phase transitions and dynamic tuning of the properties of oxide structures
    64.
    发明授权
    Electric field induced phase transitions and dynamic tuning of the properties of oxide structures 有权
    电场诱导相变和动态调整氧化物结构的性质

    公开(公告)号：US08076662B2

    公开(公告)日：2011-12-13

    申请号：US12626865

    申请日：2009-11-27

    申请人： Shriram Ramanathan ,  Changhun Ko

    发明人： Shriram Ramanathan ,  Changhun Ko

    IPC分类号： H01L29/02 ,  H01L47/00

    CPC分类号： H01L45/146 ,  G11C13/0004 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/16 ,  H01L45/1625

    摘要： Phase transitions (such as metal-insulator transitions) are induced in oxide structures (such as vanadium oxide thin films) by applying an electric field. The electric field-induced phase transitions are achieved in VO2 structures that scale down to nanometer range. In some embodiments, the optical and/or dielectric properties of the oxide structures are actively tuned by controllably varying the applied electric field. Applying a voltage to a single-phase oxide material spontaneously leads to the formation of insulating and conducting regions within the active oxide material. The dimensions and distributions of such regions can be dynamically tuned by varying the applied electric field and/or the temperature. In this way, oxide materials with dynamically tunable optical and/or dielectric properties are created.

    摘要翻译： 通过施加电场在氧化物结构（例如氧化钒薄膜）中诱导相变（例如金属 - 绝缘体转变）。 在VO2结构中实现电场诱导的相变，其缩小到纳米范围。 在一些实施例中，氧化物结构的光学和/或介电性质通过可控地改变所施加的电场而被主动地调谐。 对单相氧化物材料施加电压自发地导致在活性氧化物材料内形成绝缘和导电区域。 可以通过改变施加的电场和/或温度来动态地调整这些区域的尺寸和分布。 以这种方式，产生具有动态可调光学和/或介电特性的氧化物材料。

    Three-dimensional integrated circuit for analyte detection
    65.
    发明申请
    Three-dimensional integrated circuit for analyte detection 审中-公开
    用于分析物检测的三维集成电路

    公开(公告)号：US20100248209A1

    公开(公告)日：2010-09-30

    申请号：US11478335

    申请日：2006-06-30

    申请人： Suman Datta ,  Shriram Ramanathan ,  Jack T. Kavalieros ,  Justin K. Brask ,  Brandon Barnett

    发明人： Suman Datta ,  Shriram Ramanathan ,  Jack T. Kavalieros ,  Justin K. Brask ,  Brandon Barnett

    IPC分类号： G01R27/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  G01N27/00 ,  C12Q1/70 ,  C12Q1/02 ,  G01N33/92 ,  G01N33/00 ,  G01N33/53 ,  G01N33/68

    CPC分类号： G01N27/4145 ,  G01N27/4146 ,  Y10T436/143333

    摘要： The embodiments of the invention relate to a device having a first substrate comprising a transistor; a second substrate; an insulating layer in between and adjoining the first and second substrates; and an opening within the second substrate, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening. Other embodiments relate to a method including providing a substrate comprising a first part, a second part, and an insulating layer in between and adjoining the first and second parts; fabricating a transistor on the first part; and fabricating an opening within the second part, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening.

    摘要翻译： 本发明的实施例涉及具有包括晶体管的第一衬底的器件; 第二基板; 位于第一和第二基板之间并邻接第一和第二基板的绝缘层; 以及在所述第二基板内的开口，所述开口与所述晶体管对准; 其中所述晶体管被配置为检测所述开口内的电荷变化。 其他实施例涉及一种方法，包括提供在第一和第二部分之间并与之相邻的第一部分，第二部分和绝缘层的基底; 在第一部分制造晶体管; 以及在所述第二部分内制造开口，所述开口与所述晶体管对准; 其中所述晶体管被配置为检测所述开口内的电荷变化。

    Forming a hybrid device
    67.
    发明授权
    Forming a hybrid device 有权
    形成混合设备

    公开(公告)号：US07692310B2

    公开(公告)日：2010-04-06

    申请号：US11389860

    申请日：2006-03-27

    申请人： Chang-Min Park ,  Shriram Ramanathan

    发明人： Chang-Min Park ,  Shriram Ramanathan

    IPC分类号： H01L23/48 ,  H01L23/538

    CPC分类号： G11C11/15 ,  H01L25/16 ,  H01L27/222 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In one embodiment, the present invention includes a hybrid device having a first die including a semiconductor device and a second die coupled to the first die, where the second die includes a magnetic structure. The first die may be a semiconductor substrate, while the second die may be a magnetic substrate, and the first die may be stacked on the second die, in one embodiment. Other embodiments are described and claimed.

    摘要翻译： 在一个实施例中，本发明包括具有包括半导体器件的第一管芯和耦合到第一管芯的第二管芯的混合器件，其中第二管芯包括磁结构。 在一个实施例中，第一管芯可以是半导体衬底，而第二管芯可以是磁性衬底，并且第一管芯可以堆叠在第二管芯上。 描述和要求保护其他实施例。